Vacancy diffusion
is fundamental to materials science. Hydrogen
atoms bind strongly to vacancies and are often believed to retard
vacancy diffusion. Here, we use a potential-of-mean-force method to
study the diffusion of vacancies in Cu and Pd. We find H atoms, instead
of dragging, enhance the diffusivity of vacancies due to a positive
hydrogen Gibbs excess at the saddle-point: that is, the migration
saddle attracts more H than the vacancy ground state, characterized
by an activation excess ΓH
m ≈ 1 H, together with also-positive
migration activation volume Ωm and activation entropy S
m. Thus, according to the Gibbs adsorption isotherm
generalized to the activation path, a higher μH significantly
lowers the migration free-energy barrier. This is verified by ab initio grand canonical Monte Carlo simulations and direct
molecular dynamics simulations. This trend is believed to be generic
for migrating dislocations, grain boundaries, and so on that also
have a higher capacity for attracting H atoms due to a positive activation
volume at the migration saddles.