Combinatorial catalyst approach for high-density growth of horizontally aligned single-walled carbon nanotubes on sapphire

Ago, Hiroki; Nakamura, Yumiko; Ogawa, Yui; Tsuji, Masaharu

doi:10.1016/j.carbon.2010.09.001

Cited by 21 publications

(22 citation statements)

References 51 publications

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“…[ 33,34 ] As schematically shown in Supporting Information (Figure S6), the combinatorial mask produces an inhomogeneous Ni coverage: density gradually decreases with the distance from the slit. [ 34 ] The optimum etching density for the synthesis of GNRs shown in Figure 2 corresponds to that of Figure 3 b, while densities of Ni that are too high or too low lead to etching that is unsuitable for GNR production. At areas of low Ni density, the etching lines are not enough to produce GNRs (Figure 3 a), while at high-density areas, misalignment of the etching lines occurs (Figure 3 c).…”

Section: Communicationmentioning

confidence: 98%

“…During sputtering, a sample was covered by a combinatorial mask with a slit on it, allowing Ni deposition with varying densities. [ 33,34 ] The etching was conducted in a quartz tube using a mixed gas of Ar/H 2 (ratio 85/15), in a two-step process: the fi rst step involves annealing at 400 °C for 1 hour to remove impurities; the second step is the etching itself, which is carried out at 1100 °C for 30 minutes, followed by a slow cool down to room temperature.…”

Section: Supporting Informationmentioning

confidence: 99%

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Dense Arrays of Highly Aligned Graphene Nanoribbons Produced by Substrate‐Controlled Metal‐Assisted Etching of Graphene

et al. 2013

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Dense arrays of aligned graphene nanoribbons (GNRs) are fabricated by substrate-controlled etching of large-area single-layer graphene. An adequate choice of etching substrate and catalyst deposition method allows densities up to 25 nanoribbons μm(-1) to be obtained with average widths of 19 nm. The efficacy of the method is evidenced by the high on/off ratios of back-gated transistors made with these GNRs, which can go up to 5000.

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Section: Communicationmentioning

confidence: 98%

Section: Supporting Informationmentioning

confidence: 99%

Dense Arrays of Highly Aligned Graphene Nanoribbons Produced by Substrate‐Controlled Metal‐Assisted Etching of Graphene

et al. 2013

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“…They have also studied catalytic activities of single and binary metal catalysts for SWNT arrays growth on sapphire. And different density SWNT arrays could be achieved with varied CH 4 concentrations . In principle, SWNT arrays with even higher density may be obtained by combining the advantages of the above methods.…”

Section: Density Controlmentioning

confidence: 99%

State of the Art of Single‐Walled Carbon Nanotube Synthesis on Surfaces

Chen

Zhang

et al. 2014

Advanced Materials

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Single-walled carbon nanotubes (SWNTs) directly synthesized on surfaces are promising building blocks for nanoelectronics. The structures and the arrangement of the SWNTs on surfaces determine the quality and density of the fabricated nanoelectronics, implying the importance of structure controlled growth of SWNTs on surfaces. This review summarizes the recent research status in controlling the orientation, length, density, diameter, metallicity, and chirality of SWNTs directly synthesized on surfaces by chemical vapor deposition, together with a session presenting the characterization method of the chirality of SWNTs. Finally, the remaining major challenges are discussed and future research directions are proposed.

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“…In the CVD process, the catalyst is a key factor for growing SWNTs on substrates [12][13][14] . How to maintain the activity of catalysts 15,16 , give catalyst nanoparticles more opportunities to nucleate SWNTs 9,17 and provide new catalysts during SWNT growth 8 are key issues for obtaining SWNT arrays with ultra-high density on substrates. In this study, ultra-high density of SWNT arrays were realized through use of Trojan catalysts.…”

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confidence: 99%

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

et al. 2015

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Single-walled carbon nanotube (SWNT)-based electronics have been regarded as one of the most promising candidate technologies to replace or supplement silicon-based electronics in the future. These applications require high-density horizontally aligned SWNT arrays. During the past decade, significant efforts have been directed towards growth of high-density SWNT arrays. However, obtaining SWNT arrays with suitable density and quality still remains a big challenge. Herein, we develop a rational approach to grow SWNT arrays with ultra-high density using Trojan catalysts. The density can be as high as 130 SWNTs mm À 1 . Field-effect transistors fabricated with our SWNT arrays exhibit a record drive current density of À 467.09 mA mm À 1 and an on-conductance of 233.55 mS mm À 1 . Radio frequency transistors fabricated on these samples exhibit high intrinsic f T and f MAX of 6.94 and 14.01 GHz, respectively. These results confirm our high-density SWNT arrays are strong candidates for applications in electronics.

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Combinatorial catalyst approach for high-density growth of horizontally aligned single-walled carbon nanotubes on sapphire

Cited by 21 publications

References 51 publications

Dense Arrays of Highly Aligned Graphene Nanoribbons Produced by Substrate‐Controlled Metal‐Assisted Etching of Graphene

Dense Arrays of Highly Aligned Graphene Nanoribbons Produced by Substrate‐Controlled Metal‐Assisted Etching of Graphene

State of the Art of Single‐Walled Carbon Nanotube Synthesis on Surfaces

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

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