Combination of thermal subsystems modeled by rapid circuit transformation

Gerstenmaier, Y.C.; Kiffe, W.; Wachutka, G.

doi:10.1109/therminic.2007.4451758

Cited by 96 publications

(52 citation statements)

References 17 publications

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“…7was constructed to consider the self-heating effect only for each of the 6 MOSFETs. This was done using the established curve fitting method which starts with the construction of the Foster RC network and then converts it into the corresponding Cauer network [24][25][26]. The R and C parameters of the 6 Cauer RC networks for the 6 MOSFETs were thus extracted from the FE simulation results of the transient junction temperatures, Ti1(t), i=1, 2, …, 6, for cases C1 to C6 or D1 to D6.…”

Section: B Extraction Of the R And C Parametersmentioning

confidence: 99%

“…Compact thermal models expressed as thermal resistorcapacitor (RC) networks were more widely employed to rapidly predict junction temperatures or the temperatures at a few critical locations in the power modules for electro-thermal design, thermal management, reliability and lifetime prediction [15][16][17][18][19][20][21][22][23][24]. In the simplified cases, individual power device might be considered and one dimensional heat conduction was assumed to predict the junction temperatures [23][24][25].…”

Section: Introductionmentioning

confidence: 99%

“…In the simplified cases, individual power device might be considered and one dimensional heat conduction was assumed to predict the junction temperatures [23][24][25]. The models were constructed using either Cauer cells or Foster cells, while mathematic methods have been developed and well Jianfeng known to transform these two network models from each other [24][25][26]. Generally speaking, the Foster networks were used as behavior models to calculate the transient junction temperatures, while the R and C parameters in the Cauer networks were taken to have true physical meanings.…”

Section: Introductionmentioning

confidence: 99%

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A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

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AbstractThis paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the 6 MOSFETs under switching frequencies from 5 kHz to 100 kHz which demonstrate the good electrothermal performance of the designed power module.Index TermsMOSFETs, SiC power module, finite element methods, RC network, curve fitting, three-phase inverters.

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Section: B Extraction Of the R And C Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Castellazzi

Eleffendi

et al. 2018

IEEE Trans. Power Electron.

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“…The temperature dependence is seen as a result of the power input. The thermal impedance Z thn of a Cauer model can be expressed (see [7]) as:…”

Section: B Cauer Modelmentioning

confidence: 99%

“…The transfer function word by the Laplace variable s of a layer without subsequent layers is shown in [7]:…”

Section: Materials Properties and Layer Structurementioning

confidence: 99%

Frequency-Dependent Description of the Thermal Energy Inputs in Each Layer of a Semiconductor by Using Bode Diagrams

Richter¹,

Koller²,

Kopp³

et al. 2013

IJMO

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Abstract-Power semiconductors operate at different loads with different repetitive frequencies depending on each application. The resultant power loss of a semiconductor can be dissipated as a heat flow or absorbed. In this paper, the thermal path is described frequency-dependent by the power loss input to the thermal mass.The thermal path is defined through the packaging and described by a Cauer model. It consists of thermal resistors and capacitors which depend on the material and which can be realized through a continuous fraction element for each layer. This arrangement causes a frequency dependency of the transmission behavior of the package, which is shown in this paper by using the Bode diagram. Two different systems are described; a diode and a DBC module. The frequency-dependent description using the Bode diagram makes it possible to calculate the energy input into individual layers. Thereby the load of the layer is determined as a function of the amplitude and frequency of the input power. The frequency analysis of the input signal in combination with the material-dependent Cauer model allows prediction of the critical layers.Index Terms-Power semiconductor, thermal energy inputs, description of the thermal path, frequency-dependent layer composite, Bode diagram.

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A systematic review of structures, and geometries of the thermoelectric generators

Jaldurgam

Ahmad

2022

Applied Research

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This systematic review presents the experimental and numerical optimization of the structure, design, and geometry of thermoelectric generators (TEGs). The critical aspect of this study is to evaluate the structures of different TEG designs in terms of their electric and thermal equivalent models. Thermal stress, contact resistance, heat pipe, and pulsed heating and cooling optimization have been judgmentally reviewed. This article will serve as a valuable and indispensable source of information on all aspects of thermoelectric design, structure, and geometry optimization.

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Combination of thermal subsystems modeled by rapid circuit transformation

Cited by 96 publications

References 17 publications

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Frequency-Dependent Description of the Thermal Energy Inputs in Each Layer of a Semiconductor by Using Bode Diagrams

A systematic review of structures, and geometries of the thermoelectric generators

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