Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

Fathauer, R. W.; Nieh, C. W.; Xiao, Qi-Fan; Hashimoto, Shinji

doi:10.1016/0040-6090(90)90429-h

Cited by 7 publications

(2 citation statements)

References 12 publications

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“…Interestingly, the surface morphology exhibits a stripe structure. Berndt et al [10] and Fathauer et al [12] have found similar resultselongated surface structure in (110) films compared to round grains in (001) films. The different growth speed between (001) plane face and (011) plane face arising from the different plane face packed density may account for the striped structure.…”

Section: Results Indicate That the Crystalline Quality Increases In T...mentioning

confidence: 64%

“…The strain states depend on thin film orientation, which can dramatically affect the growth, surface morphology, magnetic and transport properties [9][10][11][12][13]. For example, Suzuki et al [9,10] have found that (110) oriented La 0.7 Sr 0.3 MnO 3 films are rougher in comparison with (001) oriented films, the magnetic anisotropy and structural symmetry as well as strain states vary with the film orientation.…”

Section: Introductionmentioning

confidence: 99%

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Film orientation effects on the structural, magnetic and transport properties of LaMnOy thin films

Zhang¹,

Li²,

Ming³

2002

J. Phys. D: Appl. Phys.

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Epitaxial LaMnOy thin films have been grown on LaAlO3 (001)/(011)/(111) substrates using an off-axis magnetron sputtering technique. The influence of the substrate orientation on the structural, magnetic and transport properties has been investigated systematically. The lattice constants, lattice mismatch, surface roughness and resistivity of annealed films increase in the order (111)<(011)<(001). The surface morphology of the (011) oriented films exhibits a striped structure. The paramagnetic-ferromagnetic transition temperature (Tc), resistivity transition temperature (Tp), and magnetoresistance (MR) of the annealed films increase in the order (001) < (011) < (111). Compared to unannealed films, the oxygen annealing decreases MR and resistivity, and increases Tp in the order (111)<(011)<(001). These demonstrate that film orientation can dramatically affect microstructural, magnetic and transport properties of LaMnOy thin films.

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Section: Results Indicate That the Crystalline Quality Increases In T...mentioning

confidence: 64%