Colour detection using buried triple pn junction structure implemented in BiCMOS process

Chouikha, Mohamed Ben; Lu, Guo‐Neng; Sedjil, Mohamed; Sou, Gérard

doi:10.1049/el:19980085

Cited by 16 publications

(18 citation statements)

References 3 publications

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“…Thus, the doping profiles and reverse bias conditions of the junctions were tailored by using TCAD process and device simulators (TSUPREM-IV and PISCES-2B), respectively [105]. M. Ben Chouikha et al [106,107] have also proposed a npnp triple-junction structure for color detection that could be implemented with bipolar or BiCMOS technology. The peaks of the three spectral response curves were situated at~480, 530, and 770 nm, respectively.…”

Section: Three-and Multi-junction Color Sensorsmentioning

confidence: 99%

Color Sensors and Their Applications

Puiu

2012

Springer Series on Chemical Sensors and Biosensors

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This chapter intends to provide an introduction to and a very brief summary of the principal categories of color sensors and of their applications, both relatively little known to the general public.First, an introduction describes the background of the topic(s) and the overall context. The main differences between two major but complementary techniques, colorimetry and spectrometry, will be presented here, as well as a quick summary of the scientific, technical, and industrial applications of color sensing. The second section will summarize the basic operational principles and architectures of color sensors realized in silicon. Although stand-alone detectors will also be described and discussed, the main focus will be on solid-state microsensors which can ideally be monolithically integrated together with signal processing circuits onto the same chip as "smart sensors" or intelligent microsystems. First, sensors realized only in monocrystalline silicon are summarized, followed then by those fabricated in other materials, with amorphous silicon and its alloys as the key players in this latter category.Finally, the chapter ends with the sections devoted to Conclusions and References. This chapter presents only a few of the most relevant aspects related to color sensors and examples of their practical applications. It is, in fact, an extensively abbreviated version of a much more detailed and exhaustive review dedicated to both color sensing and microspectrometry, and which is presently in preparation for future submission to Springer Verlag.

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Section: Three-and Multi-junction Color Sensorsmentioning

confidence: 99%

Color Sensors and Their Applications

Puiu

2012

Springer Series on Chemical Sensors and Biosensors

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“…• the absorption coefficient a (2), which in turn depends on the wavelength; • the four depletion edges x1,xl,x2fl, x2; N diffusion lengths of minority carriers in different neutral layers (Lnpp, Lp, Ln);…”

Section: Determination Of Parametersmentioning

confidence: 99%

“…and f2(A). However, to calculate photocurrents I and '2, it is needed to determine the reflection coefficient R (2).…”

Section: Determination Of Parametersmentioning

confidence: 99%

“…The BDJ detector can operate as wavelength-sensitive device , while the BTJ can be used to detect the color by specifying its three primary color components 2 Both detectors may find many applications, and for developing microchips on which such sensing elements may be integrated with electronic circuitry, we need to use CAD tools for simulation and validation.…”

Section: Introductionmentioning

confidence: 99%

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SPICE models for simulating BDJ and BTJ detectors

Alexandre

Sedjil

1999

SPIE Proceedings

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We have recently reported two novel integrated optical detectors called BDJ (Buried Double p-n Junction) detector and BTJ (Buried Triple p-n Junction) detector. The BDJ detector elaborated in CMOS process can be applied for wavelength detection while the BTJ detector based on a bipolar structure finds its applications in colorimetry. In order to use electronic CAD tools for designing micro-systems we have developed SPICE models for these detectors. The device modeling with physical approach has allowed us to determine photocurrents, which are functions of physical, geometrical, electrical, technological parameters. We have also defined schematic diagram and small signal models and integrated them in the HSPICE program. Simulations and measurements have validated these models.

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“…Section 3 deals with parameter effects on the device behavior, especially on spectral characteristics. (2) In the case of a single buried p-n junction operating as a photodiode, the photogenerated current I, has two types of components 'drift and 'diff• 'drift is the drift current component due to carriers generated inside the depletion region. The drift current component can be expressed as:…”

Section: Introductionmentioning

confidence: 99%

Modeling of BDJ and BTJ structures for color detection

Sedjil

Chouikha

et al. 1999

SPIE Proceedings

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Two color-sensitive detectors, based respectively on BDJ (Buried Double p-n Junction) and BTJ (Buried triple p-n Junction) structures, have recently been developed in standard VLSI processes. The BDJ structure implemented in a CMOS process can produce two photocurrents, and the photocurrent ratio is a monotone function of the wavelength. The BTJ structure realized in a BiCMOS process gives three band-pass spectral responses, thus allowing trichromatic color detetion. In order to obtain better insight into the behavior of these two structures, and to simulate their characteristics, we have established physical models for photocurrent calculations. The following approach has been adopted: i) calculating drift and diffusion photocurrent components which are produced in different depletion layers and neutral regions of silicon; ii) according to their contributions, determining photocurrents flowing through each buried junction. A computer program can be written for device simulations. The validity of these models has been verified through comparison between simulations and measurements. These models can also be used to study effects of parameters involved in the presented models.

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Colour detection using buried triple pn junction structure implemented in BiCMOS process

Cited by 16 publications

References 3 publications

Color Sensors and Their Applications

Color Sensors and Their Applications

SPICE models for simulating BDJ and BTJ detectors

Modeling of BDJ and BTJ structures for color detection

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