Colour control of titanium nitride coatings produced by reactive magnetron sputtering at temperature less than 100°C

Roquiny, Ph.; Bodart, F.; Terwagne, G.

doi:10.1016/s0257-8972(99)00076-6

Cited by 70 publications

(29 citation statements)

References 17 publications

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“…These explosion temperatures exceed the temperature needed for nitrogen to react and therefore allow for the formation of titanium nitrides. Similar titanium colours have also been seen for titanium oxides and nitrides by Roquiny et al 48 and Hashizume et al 49 X-ray diffraction is performed on the gold, red-brown, blue and purple colours observed in the titanium explosion residues. A high-speed Bruker D8 Advance XRD system isa used for the analysis.…”

Section: Explosion Reactionsupporting

confidence: 75%

Explosibility of micron- and nano-size titanium powders

Boilard

Amyotte

Khan

et al. 2013

Journal of Loss Prevention in the Process Industries

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Section: Explosion Reactionsupporting

confidence: 75%

Explosibility of micron- and nano-size titanium powders

Boilard

Amyotte

Khan

et al. 2013

Journal of Loss Prevention in the Process Industries

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“…The very attractive physical and chemical properties of titanium nitrides (TiN) make them very efficient for a great number of applications [1][2][3][4][5][6][7][8][9][10][11]. TiN exhibits a high melting point of 3220 K greater than those of ceramic materials such as Al 2 O 3 or Si 3 N 4 .…”

Section: Introductionmentioning

confidence: 99%

Silicides and Nitrides Formation in Ti Films Coated on Si and Exposed to (Ar-N2-H2) Expanding Plasma

et al. 2017

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Abstract:The physical properties including the mechanical, optical and electrical properties of Ti nitrides and silicides are very attractive for many applications such as protective coatings, barriers of diffusion, interconnects and so on. The simultaneous formation of nitrides and silicides in Ti films improves their electrical properties. Ti films coated on Si wafers are heated at various temperatures and processed in expanding microwave (Ar-N 2 -H 2 ) plasma for various treatment durations. The Ti-Si interface is the centre of Si diffusion into the Ti lattice and the formation of various Ti silicides, while the Ti surface is the centre of N diffusion into the Ti film and the formation of Ti nitrides. The growth of silicides and nitrides gives rise to two competing processes which are thermodynamically and kinetically controlled. The effect of thickness on the kinetics of the formation of silicides is identified. The metastable C 49 TiSi 2 phase is the main precursor of the stable C 54 TiSi 2 phase, which crystallizes at about 600 • C, while TiN crystallizes at about 800 • C.

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“…This instability restricts the achievable substrate compositions and/or substantially decreases the deposition rate. [1][2][3][4] The noted Berg model 5 describing this transition in the reactive sputtering process predicts a single S-shaped process curve of the reactive partial pressure as a function of the reactive gas flow. The importance of this curve was illustrated by Kadlec et al 6 showing the inherent instability of this curve under typical operating conditions, inducing the well-known hysteresis effect.…”

mentioning

confidence: 99%