Colossal variations in the thermopower and <i>n–p</i> conductivity switching in topological tellurides under pressure

Morozova, N. V.; Korobeinikov, Igor V.; Kurochka, K V; Ovsyannikov, Sergey V.

doi:10.1063/5.0031818

Cited by 5 publications

(2 citation statements)

References 170 publications

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“…For narrow-band-gap semiconductors and semimetals, their electronic structures are easily regulated by external stimuli, such as temperature and pressure. The changes in the Fermi surface topology, named Lifshitz transitions, are capable of inducing the conversion of the carrier type . From the derived photocurrent amplitude, the photocurrent response of both two samples gradually reduces before the switching.…”

Section: Resultsmentioning

confidence: 99%

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Liu

Jiang

et al. 2023

Chem. Mater.

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Materials capable of switching in multiple states under external stimuli have garnered extensive attention in the field of memory devices and switches. The coupling of various switching properties is of paramount significance to the creation of multifunctional devices. Herein, we report the pressure-induced multiswitching behaviors of both the structural and physical properties in two chromium selenides, CrSe and Cr2Se3. Comprehensive high-pressure characterizations reveal the collaborative occurrence of pressure-induced structural phase transitions, spin-crossover, metallization, and n–p conduction-type switching in both compounds. Upon compression, Cr2Se3 demonstrates an unexpected increase in resistivity and band gap, which is associated with the disordering of the self-intercalation structure. Of particular interest is that due to the dimensional differences in crystal structures, the photoelectric properties of the two decompressed samples are inversely regulated after pressure treatment. Notably, the band gap of Cr2Se3 is pronouncedly broadened after decompression due to the partially irreversible disorder in the structure. These results demonstrate that pressure engineering can regulate the photoelectric properties of materials effectively and flexibly, serving as a potential foundation for fabricating innovative pressure-responsive multifunctional devices.

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Section: Resultsmentioning

confidence: 99%

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Liu

Jiang

et al. 2023

Chem. Mater.

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“…As an important thermodynamic parameter as temperature, pressure can remarkably modulate the crystal structures and physical properties of materials by changing crystallographic parameters such as bond length and bond angle . Under high pressure (HP), the materials can exhibit a series of binary conversions of physical properties, such as spin-crossover, , piezochromism, , and metal–insulator transition. , In addition, pressure-driven n – p switching has also gradually attracted research interest, which mainly occurs in materials such as elements, , metal oxides, , chalcogenides, − and pnictides. , Among them, there is one class of pressure-driven n – p switching that essentially originates from electronic transitions, typically as the Fermi surface topological changes known as Lifshitz transitions, e.g. , in Bi 2 Te 3 , while the other class is related to pressure-induced structural phase transitions, e.g.…”

Section: Introductionmentioning

confidence: 99%

Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb₂

Liu

Peng

et al. 2023

Chem. Mater.

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Temperature-or pressure-driven n−p conductiontype switching has been described as an emerging phenomenon for potential applications as transistors, switches, and memory devices.The key challenge in the development of such n−p conductiontype switching materials is to establish maneuverable and controllable methods to achieve easy convertibility and nonvolatility. Herein, we report the first example of rewritable pressure and temperature dual-controlled n−p conduction-type switching in marcasite-type CrSb 2 . At room temperature, CrSb 2 exhibits an unexcepted pressure-driven n−p conductivity-type switching around 12 GPa accompanied by a marcasite-to-arsenopyrite structural transition and a semiconductor-to-metal transition. The dramatic conduction-type switching is irreversible after pressure releasing at room temperature but reversible by annealing at a relatively low temperature (>80 °C). Accordingly, a multicycle bistability switching process is established under the dual regulation of both pressure and temperature. The underlying structure− property mechanism is revealed by in situ/ex situ characterization and analyses of the atomic-level microstructure, local lattice distortion, and residual stress induced by compression. This demonstration provides a new platform for the rational design of rewritable temperature/pressure-responsive photoelectric conversion devices.

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Effect of sulfur deficiency on the structural, optical and electronic properties of MnS nanostructures

Mohamed

Badawi

Farag

2021

Chemical Physics Letters

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Colossal variations in the thermopower and n–p conductivity switching in topological tellurides under pressure

Abstract: Note: This paper is part of the Special Topic on Topological Materials and Devices.

Cited by 5 publications

References 170 publications

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb₂

Effect of sulfur deficiency on the structural, optical and electronic properties of MnS nanostructures

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Colossal variations in the thermopower and n–p conductivity switching in topological tellurides under pressure

Abstract: Note: This paper is part of the Special Topic on Topological Materials and Devices.

Cited by 5 publications

References 170 publications

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Pressure-Induced Reversible and Irreversible Multistate Switching in NiAs-Type Chromium Selenides

Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb2

Effect of sulfur deficiency on the structural, optical and electronic properties of MnS nanostructures

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Product

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About

Rewritable Pressure-Driven n–p Conduction Switching in Marcasite-Type CrSb₂