Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb

Yu, Shuang; Peng, Yi; Zhao, Guoqiang; Zhao, Junbin; Wang, Xiancheng; Zhang, Jun; Deng, Zheng; Chen, Jin

doi:10.1088/1674-4926/44/3/032501

Cited by 6 publications

(4 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…[19] The reason is that the iso-valent substitution of Zn or Hg by Mn only introduces magnetic moments, and there are no enough carriers to build up the long-range ferromagnetic ordering. On the other hand, in some recently reported bulk form MSs, such as Ba(Zn,Mn,Cu) 2 As 2 [20] and Na(Zn,Mn)Sb, [21] spin-glass ordering state or glassy ferromagnetism has also been observed. These spin-glass state could be ascribed to the magnetic frus-tration generated by the competition between the indirect ferromagnetic and direct antiferromagnetic interactions.…”

Section: Introductionmentioning

confidence: 94%

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Zhao 赵,

Dong 董,

Zhang 张

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

We report the successful fabrication of a new 1111-type bulk magnetic semiconductor (La,Ba)(Zn,Mn)SbO through the solid solution of (La,Ba) and (Zn,Mn) in the parent compound LaZnSbO. The polycrystalline samples (La,Ba)(Zn,Mn)SbO crystallize into ZrCuSiAs-type tetragonal structure, which has the same structure as iron-based superconductor LaFeAsO1−δ . The DC magnetization measurements indicate the existence of spin-glass ordering, and the coercive field is up to ~ 11 500 Oe. The AC magnetic susceptibility further determines that the samples evolve into a conventional spin-glass ordering state below the spin freezing temperature T f. In addition, the negative magnetoresistance (MR ≡ [ρ(H) − ρ(0)]/ρ(0)) reaches - 88% under 9 T.

show abstract

Section: Introductionmentioning

confidence: 94%

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Zhao 赵,

Dong 董,

Zhang 张

et al. 2023

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…(Ca, K)(Zn, Mn) 2 As 2 [20] , Na(Zn, Mn)Sb [21] 等. 这类MS材料中的自旋和载流子被分开注入到半导体中, 这使得研究它们各自在铁磁有序形成过程中的作用成为可能.…”

Section: 近年来一系列电荷、自旋可分别注入的新型块unclassified

Manipulation of ferromagnetic ordering in magnetic semiconductor Li1.05(Zn0.925, Mn0.075)As by In doping

Xie,

Dong,

Zhao

et al. 2024

Acta Phys. Sin.

View full text Add to dashboard Cite

Magnetic semiconductors (MSs) that can manipulate both spin and charge degrees of freedom have become an important research field in semiconductor spintronics. In recent years, some new series of bulk form MSs, that are iso-structure to the iron-based superconductors were reported. In these new materials, spins and carriers are separately introduced, which enable it to be precisely manipulated. Li(Zn,Mn)As with TC~50K is the first bulk MS with spins and charges separation. The carriers of Li(Zn,Mn)As is p-type, which is in contradiction with the theoretical calculation results by Mašek et al where they believe that doping extra Li will induce n-type carriers. However, it is still necessary to study the formation reason of hole carriers in Li(Zn,Mn)As and its effect on ferromagnetic ordering. In this paper, a series of Li1.05(Zn0.925-y,Mn0.075,Iny)As (y=0, 0.05, 0.075, 0.1) new materials have been successfully synthesized by introducing n-type carriers into the p-type bulk MS Li1.05(Zn0.925,Mn0.075)As through (Zn2+,In3+) substitution. Magnetization measurements reveal that all the samples still maintain a ferromagnetic transition signal similar to MS Li1.05(Zn0.925,Mn0.075)As, and the Curie temperature TC is obviously suppressed with the increase of In-doping concentration. Clear hysteresis loops demonstrate the ferromagnetic ordering state. The resistivity increases gradually with the increase of In-doping concentration. Our results show that the (Zn2+, In3+) substitution successfully introduces n-type carriers in Li1.05(Zn0.925,Mn0.075)As, and the original p-type carriers in Li1.05(Zn0.925,Mn0.075)As are partial neutralized, resulting in the decreasing of p-type carrier concentrations, which obviously suppressed the ferromagnetic ordering of Li(Zn,Mn)As. It reflects the important roles played by carriers in the formation of ferromagnetic ordering in MS materials. The fabrication of Li1.05(Zn0.925-y,Mn0.075,Iny)As material gives us a better understanding of the mechanism of ferromagnetic ordering in Li(Zn,Mn)As, and these results will be helpful for searching more novel magnetic semiconductor materials.

show abstract

“…Crystal structure is one the fundamental factors to determine the materials' properties [23] . In particularly, the samples are isolated from external conditions during compression.…”

Section: Introductionmentioning

confidence: 99%

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_0.95Mn_0.05)₂As₂

Sun,

Peng,

Zhao

et al. 2024

J. Semicond.

Self Cite

View full text Add to dashboard Cite

Applying pressure has been evidenced as an effective method to control the properties of semiconductors, owing to its capability to modify the band configuration around Fermi energy. Correspondingly, structural evolutions under external pressures are required to analyze the mechanisms. Herein high-pressure structure of a magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2 is studied with combination of in-situ synchrotron X-ray diffractions and diamond anvil cells. The materials become ferromagnetic with Curie temperature of 105 K after further 20% K doping. The title material undergoes an isostructural phase transition at around 19 GPa. Below the transition pressure, it is remarkable to find lengthening of Zn/Mn−As bond within Zn/MnAs layers, since chemical bonds are generally shortened with applying pressures. Accompanied with the bond stretch, interlayer As−As distances become shorter and the As−As dimers form after the phase transition. With further compression, Zn/Mn−As bond becomes shortened due to the recovery of isotropic compression on the Zn/MnAs layers.

show abstract

Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb

Cited by 6 publications

References 32 publications

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Manipulation of ferromagnetic ordering in magnetic semiconductor Li<sub>1.05</sub>(Zn<sub>0.925</sub>, Mn<sub>0.075</sub>)As by In doping

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_0.95Mn_0.05)₂As₂

Contact Info

Product

Resources

About

Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb

Cited by 6 publications

References 32 publications

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Manipulation of ferromagnetic ordering in magnetic semiconductor Li<sub>1.05</sub>(Zn<sub>0.925</sub>, Mn<sub>0.075</sub>)As by In doping

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

Contact Info

Product

Resources

About

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn_0.95Mn_0.05)₂As₂