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Vaqueiro, Paz; Powell, Anthony V.; Coldea, A. I.; Steer, C.; Marshall, I.M.; Blundell, Stephen J.; Singleton, John; Ohtani, Toshio

doi:10.1103/physrevb.64.132402

Cited by 37 publications

(36 citation statements)

References 17 publications

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“…in a trigonal structure [SG: P3 l c; a = 5.9441(1) Å and c = 11.203 39(2) Å]. Both sets of unit cell parameters are consistent with previous studies [22][23][24]. The different set found for the SPS-treated sample could be related to two factors.…”

Section: Cr 2 Ssupporting

confidence: 78%

“…Besides, the higher covalency in chalcogenides favors the metal-metal interactions [5]. Concerning the thermoelectric selenides, several recent reports illustrate this different chemistry for Bi 2 Se 3 nanostructures [6], doped PbSe [7], quaternary tin selenide K 1−x Sn 5−x Bi 11+x Se 22 [8], p-type Cu 2+x Zn 1−x GeSe 4 [9] and Ag 2 Se [10]. Also zT = 0.6 at 1150 K for a (Cu/Fe) x Mo 6 Se 8 Chevrel phase was reported [11].…”

Section: Introductionmentioning

confidence: 99%

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Revisiting some chalcogenides for thermoelectricity

Maignan¹,

Guilmeau²,

Gascoin³

et al. 2012

Science and Technology of Advanced Materials

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Thermoelectric materials that are efficient well above ambient temperature are needed to convert waste-heat into electricity. Many thermoelectric oxides were investigated for this purpose, but their power factor (PF) values were too small (∼10 −4 W m −1 K −2 ) to yield a satisfactory figure of merit zT. Changing the anions from O 2− to S 2− and then to Se 2− is a way to increase the covalency. In this review, some examples of sulfides (binary Cr-S or derived from layered TiS 2 ) and an example of selenides, AgCrSe 2 , have been selected to illustrate the characteristic features of their physical properties. The comparison of the only two semiconducting binary chromium sulfides and of a layered AgCrSe 2 selenide shows that the PF values are also in the same order of magnitude as those of transition metal oxides. In contrast, the PF values of the layered sulfides TiS 2 and Cu 0.1 TiS 2 are higher, reaching ∼10 −3 W m −1 K −2 . Apparently the magnetism related to the Cr-S network is detrimental for the PF when compared to the d 0 character of the Ti 4+ based sulfides. Finally, the very low PF in AgCrSe 2 (PF = 2.25 × 10 −4 W m 1 K −2 at 700 K) is compensated by a very low thermal conductivity (κ = 0.2 W m −1 K −1 from the measured C p ) leading to the highest zT value among the reviewed compounds (zT 700 K = 0.8). The existence of a glassy-like state for the Ag + cations above 475 K is believed to be responsible for this result. This result demonstrates that the phonon engineering in open frameworks is a very interesting way to generate efficient thermoelectric materials.

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Section: Cr 2 Ssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Revisiting some chalcogenides for thermoelectricity

Maignan¹,

Guilmeau²,

Gascoin³

et al. 2012

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

show abstract

“…As experimentally found, lower values for the effective magnetic moments are obtained when the fitted range is extended to higher temperatures (see Table 1). Note that m eff /Cr for most chromium chalcogenides reported in the literature varies over a wide range even for compounds with precise valency [16][17][18][19][20][21][22][23]. Hence it is not straightforward to deduce the oxidation state of the Cr atoms from an analysis of the experimental magnetic moments alone.…”

Section: Discussionmentioning

confidence: 96%

Magnetic properties and low temperature X-ray studies of the weak ferromagnetic monoclinic and trigonal chromium tellurides Cr5Te8

Lukoschus

Kraschinski

Näther

et al. 2004

Journal of Solid State Chemistry

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“…We show that the room-temperature ZT value of $0.9 for the hightemperature long-sintered phase of CuCrS 2 is significant and comparable to good TE materials. 11 …”

Section: Introductionmentioning

confidence: 97%

Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2

Tewari

Tripathi

Kumar

et al. 2011

Journal of Elec Materi

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The thermoelectric figure of merit (ZT) of the layered antiferromagnetic compound CuCrS 2 is further improved with increase in the Cr-vacancy disorder on sintering above 900°C. X-ray photoelectron spectroscopy and x-ray diffraction refinement results for different samples show that the chromium atoms are transferred from the filled layers to the vacant sites between the layers. This atomic disorder increases the electrical conductivity (r) due to self-doping of the charge carriers and reduces thermal conductivity (j) due to increase in phonon scattering. The Seebeck coefficient (S) is p-type and remains nearly temperature independent with values between 150 lV/K and 450 lV/K due to electronic doping in different samples.

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Colossal magnetoresistance in the layered chromium sulfideCr2S3−x
Paz Vaqueiro
¹
,
Anthony V. Powell
²
,
A. I. Coldea
³

et al.

Cited by 37 publications

References 17 publications

Revisiting some chalcogenides for thermoelectricity

Revisiting some chalcogenides for thermoelectricity

Magnetic properties and low temperature X-ray studies of the weak ferromagnetic monoclinic and trigonal chromium tellurides Cr5Te8

Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2

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Colossal magnetoresistance in the layered chromium sulfideCr2S3−xPaz Vaqueiro1, Anthony V. Powell2, A. I. Coldea3 et al.

Cited by 37 publications

References 17 publications

Revisiting some chalcogenides for thermoelectricity

Revisiting some chalcogenides for thermoelectricity

Magnetic properties and low temperature X-ray studies of the weak ferromagnetic monoclinic and trigonal chromium tellurides Cr5Te8

Increase in the Thermoelectric Efficiency of the Disordered Phase of Layered Antiferromagnetic CuCrS2

Contact Info

Product

Resources

About

Colossal magnetoresistance in the layered chromium sulfideCr2S3−x
Paz Vaqueiro
¹
,
Anthony V. Powell
²
,
A. I. Coldea
³

et al.