Colossal magnetocapacitance effect in BiFeO3/La5/8Ca3/8MnO3 epitaxial films

Liu, Yu Kuai; Yao, Yiping; Dong, Sining; Jiang, Tao; Yang, Shengwei; Li, Xiaoguang

doi:10.1016/j.tsf.2012.04.074

Cited by 11 publications

(10 citation statements)

References 26 publications

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“…[30,94] A colos-sal magnetocapacitance (MC = [ε(H) − ε(0)]/ε(0), where ε(H) and ε(0) are the dielectric constants with and without magnetic fields) up to 1100% near the Curie temperature T C = 220 K of La 5/8 Ca 3/8 MnO 3 has been observed in the BiFeO 3 /La 5/8 Ca 3/8 MnO 3 heterostructure. [78] (see Fig. 17), which is three orders of magnitude higher than that reported in a single phase BiFeO 3 system.…”

Section: Magnetic Field Effects On the Magnetoelectric Coupling In Ma...mentioning

confidence: 63%

“…[30,94] A colossal magnetocapacitance (MC=[ε(H)-ε(0)]/ε(0), where ε(H) and ε(0) are the dielectric constants with and without magnetic fields) up to 1100% near the Curie temperature T C = 220 K of La 5/8 Ca 3/8 MnO 3 in BiFeO 3 /La 5/8 Ca 3/8 MnO 3 heterostructure is observed, see Fig. 17, [78] which is three orders of magnitude higher than that reported in a single phase BiFeO 3 system. [95,96] The colossal magnetocapacitance effect can be achieved in a wide frequency region from 200 kHz to 2 MHz and a wide temperature range from 190 K to 260 K. [78]…”

Section: Magnetic Field Effects On the Magnetoelectric Coupling In Ma...mentioning

confidence: 94%

“…Due to the sensitivity of the spin, charge, orbital, and lattice degrees of freedom to external stimulus in manganites, the magnetic and electric properties of manganites can be tuned in situ by using a neighboring ferroelectric substance through strain and/or charge manipulation in the manganites/ferroelectric multiferroic heterostructures. [31,51,77,78] The ferroelectric materials (1 − x)Pb(Mg 1/3 Nb 2/3 )O 3 − xPbTiO 3 (PMN-PT) with composition near the morphotropic phase boundary (x = 0.33) exhibit outstanding piezoelectric activity and giant remanent polarization, and can be used as ferroelectric substrates to grow manganite thin films. [77,[79][80][81][82][83][84][85] show the strain and ferroelectric field effects on the resistances of the Pr 0.5 Ca 0.5 MnO 3 film in Pr 0.5 Ca 0.5 MnO 3 /PMN-PT heterostructures at different temperatures.…”

Section: Ferroelectric Controlled Electric and Magnetic Properties Of...mentioning

confidence: 99%

“…17), which is three orders of magnitude higher than that reported in a single phase BiFeO 3 system. [95,96] The colossal magnetocapacitance effect can be achieved in a wide frequency region from 200 kHz to 2 MHz and a wide temperature range from 190 K to 260 K. [78] Electric field/kVScm -1 Electric field/kVScm -1…”

Section: Magnetic Field Effects On the Magnetoelectric Coupling In Ma...mentioning

confidence: 99%

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Colossal magnetoresistance in manganites and related prototype devices

Liu¹,

Yin²,

Li³

2013

Chinese Phys. B

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The perovskite manganite RE 1-x AE x MnO 3 (RE = La, Pr, Sm, etc. and AE = Ca, Sr, Ba, Pb) exhibiting colossal magnetoresistance (CMR) effect is one of strongly correlated electron systems with strong interplays among the charge, spin, orbital, and lattice degrees of freedom, such as double-exchange interaction, super-exchange interaction, Jahn-Taller-type electron-lattice distortion, and Hund's coupling, etc., leading to complex electronic, magnetic, and structural phase diagrams. The rich physics involved in manganites, for example, the phase separation, charge ordering, and half-metallicity, makes it as one of the hottest topics in condensed matter physics, and various prototype devices have been designed with the development of the preparation technology and scientific research. In this review paper, after a brief introduction on the most important features of crystal structure, electronic structure and phase diagram, most efforts are devoted to the following aspects: CMR effect in single phase manganite related to the field sensitive spine-charge interactions and phase separation; rectifying property and negative/positive magnetoresistance effect in manganite/Nb:STO p-n junctions related to the special interface electronic structure; magnetoelectric coupling effect in manganite/ferroelectric structure taking advantage of the strain, carrier density and magnetic field sensitive properties; tunneling magnetoresistance effect in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers by using the fully spin polarized nature of manganites; and size effect on magnetic properties in manganite nanoparticles.

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Section: Magnetic Field Effects On the Magnetoelectric Coupling In Ma...mentioning

confidence: 63%

Section: Magnetic Field Effects On the Magnetoelectric Coupling In Ma...mentioning

confidence: 94%

Section: Ferroelectric Controlled Electric and Magnetic Properties Of...mentioning

confidence: 99%

Section: Magnetic Field Effects On the Magnetoelectric Coupling In Ma...mentioning

confidence: 99%

See 2 more Smart Citations

Colossal magnetoresistance in manganites and related prototype devices

Liu¹,

Yin²,

Li³

2013

Chinese Phys. B

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show abstract

“…Magnetic and electrical properties of many systems can be appropriately changed by pairing them with a ferroelectric in multiferroic heterostructures [13][14][15][16][17]. Their properties are controlled by inducing mechanical stress [18].…”

Section: Introductionmentioning

confidence: 99%

On the polarization dynamics in the presence of flexoelectricity and morphotropic phase boundary in ferroelectrics

Pikin

2017

Crystallogr. Rep.

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It is shown that anomalous piezoelectric properties of epitaxial nanostructures arise on the morphotropic phase boundary (MPB) due to the strong flexoelectric effect on dislocation walls. The MPB (typical of many materials) exhibits a coexistence of various phases and partition of these phases to minimum sizes. This minimum size l с (nanoscale) is found using the dislocation theory; it coincides with the distance between individual dislocations in dislocation walls, which is much larger than the Burgers vector b, regardless of the type of crystalline material. The flexoelectric coefficients f are estimated taking into account dimensional relations and experimental data on the rotations of ferroelectric nanodomains in multiferroics. These estimates coincide with classical values. The critical value l с ∼ 10b specifies the measured dependence on the dielectric susceptibility , . The quantity depends on the frequency of the ac electric field applied to a sample and on the dislocation density. The Ba 0.6 Sr 0.4 TiO 3 /Ni 0.8 Zn 0.2 Fe 2 O 4 ceramic composite shows typical frequency dispersion of in a wide frequency range. The frequency dependence of flexoelecric coefficients is shown to reproduce the frequency dependence of permittivity at high frequencies.

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Dielectric relaxations in pure, La-doped, and (La, Co)-codoped BiFeO3: Post-sintering annealing studies

Wang

Zhang

et al. 2018

Journal of Alloys and Compounds

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Colossal magnetocapacitance effect in BiFeO3/La5/8Ca3/8MnO3 epitaxial films

Cited by 11 publications

References 26 publications

Colossal magnetoresistance in manganites and related prototype devices

Colossal magnetoresistance in manganites and related prototype devices

On the polarization dynamics in the presence of flexoelectricity and morphotropic phase boundary in ferroelectrics

Dielectric relaxations in pure, La-doped, and (La, Co)-codoped BiFeO3: Post-sintering annealing studies

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