Colossal electroresistance of a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Pr</mml:mi><mml:mn>0.7</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Ca</mml:mi><mml:mn>0.3</mml:mn></mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>thin film at room temperature

Odagawa, Akihiro; Sato, Hiroshi; Inoue, Isao; Akoh, H.; Kawasaki, Masashi; Tokura, Y.; Kanno, Tsutomu; Adachi, Hideaki

doi:10.1103/physrevb.70.224403

Cited by 289 publications

(165 citation statements)

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“…T he past decades have witnessed dramatic discoveries in carrier-doped, strongly correlated complex oxides, typified by the emergence of high-temperature superconductivity in doped antiferromagnetic (AFM) cuprates and colossal magnetoresistance (CMR) in doped manganites 1,2 ; interestingly, reversible resistance switching induced by external electric fields on various manganites shows large electroresistance (ER) response and provides a great potential as an emerging nonvolatile memory technology [3][4][5][6] . Although the detailed mechanism of high-temperature superconductivity remains to be understood, CMR effect in the manganites is known to result from coexisting and competing ferromagnetic (FM) metallic and AFM-insulating phases in the CMR regime 7,8 .…”

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confidence: 99%

“…An analogous response caused by mixed-phase coexistence in non-magnetic, uncorrelated oxides is found in the relaxor family of ferroelectrics, in which large dielectric and piezoelectric responses are observed near morphotropic phase boundaries 9,10 . In thin-film BiFeO 3 , epitaxial strain leads to the formation of a nanoscale, mixedphase ensemble of two crystal structures that can be reversibly transformed between each other with electric fields, leading to large piezoelectric responses 11,12 . Although these examples (as a direct consequence of mixed-phase coexistence) all occur in systems that are insulating (at least until chemically doped), we extend the same concept to metallic systems of FeRh in this report.…”

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Large resistivity modulation in mixed-phase metallic systems

et al. 2015

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In numerous systems, giant physical responses have been discovered when two phases coexist; for example, near a phase transition. An intermetallic FeRh system undergoes a first-order antiferromagnetic to ferromagnetic transition above room temperature and shows two-phase coexistence near the transition. Here we have investigated the effect of an electric field to FeRh/PMN-PT heterostructures and report 8% change in the electrical resistivity of FeRh films. Such a 'giant' electroresistance (GER) response is striking in metallic systems, in which external electric fields are screened, and thus only weakly influence the carrier concentrations and mobilities. We show that our FeRh films comprise coexisting ferromagnetic and antiferromagnetic phases with different resistivities and the origin of the GER effect is the strain-mediated change in their relative proportions. The observed behaviour is reminiscent of colossal magnetoresistance in perovskite manganites and illustrates the role of mixed-phase coexistence in achieving large changes in physical properties with low-energy external perturbation.

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Large resistivity modulation in mixed-phase metallic systems

et al. 2015

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“…This is especially true for the switching across metal-Pr 0.7 Ca 0.3 MnO 3 (PCMO) interfaces. 3,4,5,6 Several models, i.e. bulk phase-separation, 3 carrier-trapping in pre-existing metallic domains, 7,8 and field-induced lattice defects, 4 have been proposed.…”

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Mechanism and scalability in resistive switching of metal-Pr0.7Ca0.3MnO3 interface

Tsui

Wang

Xue

et al. 2006

Applied Physics Letters

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The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size-scalability, may be altered through interface treatments.The renewed interest in various resistive switching phenomena is largely driven by recent market demands for nano-sized nonvolatile memory devices. 1 While the current boom of consumer electronics may largely be attributed to the successful miniaturization of both FLASH chips and mini hard drives, cheaper and smaller devices are called for.Various resistive hysteretic phenomena are consequently studied with the hope that the size limitations associated with the related physics/chemistry/technology might be less severe. 2 Our limited knowledge about the mechanisms so far, however, makes the evaluation difficult. This is especially true for the switching across metal-Pr 0.7 Ca 0.3 MnO 3 (PCMO) interfaces. 3,4,5,6 Several models, i.e. bulk phase-separation, 3 carrier-trapping in pre-existing metallic domains, 7,8 and field-induced lattice defects, 4 have been proposed. Each possesses its own distinguishable size-limitation, e.g. the statistics of the associated local mesostructures. Here, we report our mechanism investigation through both the trapped-carrier distribution and their hopping range. Our data suggest that the characteristics may largely be engineered through the mesostructure of the interfacial defects.Bulk PCMO, in great contrast with well known semiconductors, has a rather high nominal carrier concentration with its high resistivity mainly attributed to hopping barriers. 9 Local defects, therefore, appear as a natural cause of the resistive switching. Following this line of reasoning, a domain model has recently attracted much attention. 7,8 There, a tunneling from the electrode to some pre-existing interfacial metallic domains has been assumed to be the dominant process. Consequently, the carrier-occupation in the domains may change with the carrier-trapping during the write pulses, and cause the Rswitch between an on (low resistance) and an off (high resistance) state. This is realized through either the change of the tunneling probability 7 or a doping-induced metalinsulator transition. 8 Useful devices based on this mechanism, therefore, should typically be much larger than these interfacial domains. It is interesting to note that even if the "domains" can be reduced to individual lattice defects (or small clusters) as in the proposed defect modification model, 4 the fluctuation (inhomogeneity) of the defect density still sets a limit for the size scalability just like the dopant fl...

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“…This change in electrical resistance induced by electric current/electric field is known as electroresistance (ER). In most of the previous work ER was observed in thin films and single crystal manganites with a charge ordered insulating (COl) state [6][7][8][9][10][11]. Only a few studies were reported on the electroresistance in polycrystalline manganites [12][13][14][15].…”

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Colossal electroresistance in Sm0.55Sr0.45MnO3

Mohan

Kumar

Singh

et al. 2010

Journal of Alloys and Compounds

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We report a colossal resistance drop around insulator-metal transition temperature (TMI) in Sm0.5SSr0.4SMn03 induced by direct current. Polycrystalline samples of Sm0.5SSr0.4SMn03 were synthesized through solid state reaction method, They have been investigated by X-ray diffraction for phase evaluation, scanning electron microscopy for grain morphology and de resistivity measurement techniques for resistivity-temperature behavior. The resistivity-temperature behavior has been measured with different biasing currents (1 rnA, 2.5 rnA,S rnA, lOrnA and 50 rnA), With increasing biasing current, the resistivity of the samples decreased drastically, The change in the resistivity of the samples for bias currents 1 rnA and 50 rnA at TMI was found to be~2560%, This phenomenon of electroresistance is discussed in view of strong interaction between carrier spins and localized spins in Mn ions and percolative mechanism of phase-separation.

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Colossal electroresistance of aPr0.7Ca0.3MnO3thin film at room temperature

Cited by 289 publications

References 15 publications

Large resistivity modulation in mixed-phase metallic systems

Large resistivity modulation in mixed-phase metallic systems

Mechanism and scalability in resistive switching of metal-Pr0.7Ca0.3MnO3 interface

Colossal electroresistance in Sm0.55Sr0.45MnO3

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