Color‐Tunable Photoluminescence and NIR Electroluminescence in Carbon Nitride Thin Films and Light‐Emitting Diodes

Abstract

Color‐tunable photoluminescence from continuous graphitic carbon nitride (g‐C3N4) thin films is demonstrated. The films are employed in light‐emitting diodes. A strong redshift of the electroluminescence with respect to photo­luminescence is observed and a model for this uncommon behavior is provided.

Toward Efficient Carbon Nitride Photoelectrochemical Cells: Understanding Charge Transfer Processes

“…[1,2] The common PEC configuration is based on a photoanode, electrolyte solution (with or without redox couple), and a counter electrode. [15] More recently, we and others showed that C 3 N 4 can be used in photoelectronic devices, such as organic solar cells, [16] light emitting diode, [17] and photoelectrochemical cells. [3] In order to achieve efficient PEC, a proper kinetic balance between the different charge transfer reactions taking place in the PEC must be accomplished.…”

Characterization of urea derived polymeric carbon nitride and resultant thermally vacuum deposited amorphous thin films: Structural, chemical and photophysical properties

“…Recently, color-tunable photoluminescence (PL) in p-CN powders has been reported [47], highlighting the potential of this material to be integrated as a functional layer in optoelectronic M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT 5 devices [48][49][50]. However, the corresponding thin film properties resulting from high temperature based formation/deposition method can dramatically differ from bulk p-CN materials thus requiring a detailed attention on the corresponding structure/property relationship.…”

Carbon Nitride/Reduced Graphene Oxide Film with Enhanced Electron Diffusion Length: An Efficient Photo‐Electrochemical Cell for Hydrogen Generation

“…[6,7] Despite significant progress in this field, [3,[10][11][12][13][14][15][16][17] semiconductors that fulfill all these requirements rarely exist today, and the production of such semiconductors is still much sought after.Over the past few years, polymeric graphitic carbon nitride (CN) has attracted widespread attention due to its outstanding electronic properties, which have been exploited in various applications, including photo-and electrocatalysis, [18][19][20][21][22][23][24] heterogeneous catalysis, [25][26][27][28] CO 2 reduction, [29][30][31] water splitting, [32][33][34][35][36][37][38][39][40] light-emitting diodes, [41] photovoltaics, [42][43][44] and sensing. [6,7] Despite significant progress in this field, [3,[10][11][12][13][14]…”

“…Over the past few years, polymeric graphitic carbon nitride (CN) has attracted widespread attention due to its outstanding electronic properties, which have been exploited in various applications, including photo-and electrocatalysis, [18][19][20][21][22][23][24] heterogeneous catalysis, [25][26][27][28] CO 2 reduction, [29][30][31] water splitting, [32][33][34][35][36][37][38][39][40] light-emitting diodes, [41] photovoltaics, [42][43][44] and sensing. [45][46][47] Its unique and tunable optical, chemical, and catalytic properties, alongside its low price and remarkably high stability to oxidation, make it a very attractive material for PEC applications.…”