Colloidal quantum-dot LEDs with a solution-processed copper oxide (CuO) hole injection layer

High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer

“…For example, currently all the reported RGB QLEDs with the highest‐efficiency values utilize solution‐processed ZnO nanoparticles as electron transport layer (ETL) . Efforts to replace PEDOT:PSS with solution‐processed inorganic hole transport materials such as NiO, CuSCN, CuO, and WO 3 have been made in the recent years. However, the electroluminescence performance for these reported QLEDs using p‐type inorganic interface buffer layer is still not satisfactory when compared to that based on PEDOT:PSS due to the inferior hole injection capability in spite of significantly improved device stability.…”

48-2:Invited Paper: N- and P-type Metal-Oxides for Quantum Dot Light Emitting Diodes

“…Despite of high temperature process of p-type metal oxide, NiO and CuO has been studied to fabricate QLEDs, OLEDs and OPVs. [17][18][19] Among the p-type oxides, NiO is widely used as HIL because of its wide energy band-gap (3.3 eV) compared to CuO (2.4 eV). In our study, we investigated NiO, doped NiO, CuO and doped CuO as HIL/HTL and also for CGL.…”

Interfacial electronic structure between a W-doped In2O3 transparent electrode and a V2O5 hole injection layer for inorganic quantum-dot light-emitting diodes

“…Vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 3 ), nickel oxide (NiO), and copper oxide (CuO) have been used as a HIL in QLEDs. [20][21][22][23] QLEDs with TMOs as the HIL exhibited superior characteristics including stability upon exposure to oxygen, hydrogen, and heat. 24 Also, the adhesion force of V 2 O 5 is strong enough to form a stable thin lm on a substrate.…”