Colloidal nanocrystal-based light-emitting diodes fabricated on plastic toward flexible quantum dot optoelectronics

Tan, Zhanao; Xu, Jian; Zhang, Chunfeng; Tao, Zhu; Zhang, Fan; Hedrick, Brittany; Pickering, Shawn; Wu, J.; Su, Huaipeng; Gao, Shuai; Wang, Andrew Y.; Kimball, Brian R.; Rużyłło, Jerzy; Dellas, N. S.; Mohney, Suzanne E.

doi:10.1063/1.3074335

Cited by 52 publications

(39 citation statements)

References 23 publications

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“…[1][2][3][4] The solutionbased process also has provided high feasibility of realizing flexible and large scale photovoltaic devices with costeffective fabrication. [5][6][7][8] Despite these favorable characteristics, poor charge transport and imperfect surface status of CQDs hinder high photovoltaic performance compared to the theoretical conversion efficiency. During the synthetic process, CQDs are capped by long and bulky organic ligands which enable to control the size of CQDs by preventing over-size aggregation and enhancing chemical stability.…”

mentioning

confidence: 99%

Inorganic-ligand exchanging time effect in PbS quantum dot solar cell

Kim

Hong

Hou

et al. 2016

Applied Physics Letters

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We investigate time-dependent inorganic ligand exchanging effect and photovoltaic performance of lead sulfide (PbS) nanocrystal films. With optimal processing time, volume shrinkage induced by residual oleic acid of the PbS colloidal quantum dot (CQD) was minimized and a crack-free film was obtained with improved flatness. Furthermore, sufficient surface passivation significantly increased the packing density by replacing from long oleic acid to a short iodide molecule. It thus facilities exciton dissociation via enhanced charge carrier transport in PbS CQD films, resulting in the improved power conversion efficiency from 3.39% to 6.62%. We also found that excess iodine ions on the PbS surface rather hinder high photovoltaic performance of the CQD solar cell.

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mentioning

confidence: 99%

Inorganic-ligand exchanging time effect in PbS quantum dot solar cell

Kim

Hong

Hou

et al. 2016

Applied Physics Letters

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“…The energy levels can be controlled by changing the size and shape of the quantum dot, and the depth of the potential. Quantum dots can be fabricated using mainly three different techniques: lithography, 18,19 colloidal synthesis, 20,21 and epitaxial methods such as MOC-VD 22,23 and molecular beam epitaxy (MBE). 24,25 In lithography, small features are fabricated using electron beam or ion beam methods.…”

Section: Quantum Dot Gate Field-effect Transistor (Qdgfet)mentioning

confidence: 99%

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

Karmakar

Suarez

Jain

2011

Journal of Elec Materi

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This paper presents the three-state behavior of quantum dot gate field-effect transistors (FETs). GeO x -cladded Ge quantum dots (QDs) are site-specifically self-assembled over lattice-matched ZnS-ZnMgS high-j gate insulator layers grown by metalorganic chemical vapor deposition (MOCVD) on silicon substrates. A model of three-state behavior manifested in the transfer characteristics due to the quantum dot gate is also presented. The model is based on the transfer of carriers from the inversion channel to two layers of cladded GeO x -Ge quantum dots.

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“…The 30−nm electron transport layer, tris−(8−hydroxyquinoline) aluminium (Alq3 purchased from American Dye Source) is then added via thermal evaporation under a pressure of 3×10 -7 . Finally, the top electrode of Ca/Al (~10 nm/~150 nm) is deposited via thermal evaporation [1]. Figure 3 depicts the masking and deposition process used to create the three−color devices.…”

Section: Methodsmentioning

confidence: 99%

“…QD light emitting diodes (QD−LEDs) have since been developed to electrically inject electron−carriers and hole−carriers into a layer of colloidal semiconductor quan− tum dots to produce light emission. The QD−LEDs are solu− tion processible by virtue of the multilayer device configu− ration that is similar to polymer light emitting diodes (OLEDS) [1][2][3]. Through the use of inorganic semiconduc− tor nanodots rather than organic compounds for light emis− sion the long term reliability and stability under varied ambient conditions could potentially increase.…”

Section: Introductionmentioning

confidence: 99%

Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices

Pickering

Kshirsagar

Rużyłło

et al. 2012

Opto-Electronics Review

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In this experiment a technique of mist deposition was explored as a way to form patterned ultra-thin-films of CdSe/ZnS core/shell nanocrystalline quantum dots using colloidal solutions. The objective of this study was to investigate the feasibility of mist deposition as a patterning method for creating multicolour quantum dot light emitting diodes. Mist deposition was used to create three rows of quantum dot light emitting diodes on a single device with each row having a separate colour. The colours chosen were red, green and yellow with corresponding peak wavelengths of 620 nm, 558 nm, and 587 nm. The results obtained from this experiment show that it is possible to create multicolour devices on a single substrate. The peak brightnesses obtained in this experiment for the red, green, and yellow were 508 cd/m, 507 cd/m, and 665 cd/m, respectively. The similar LED brightness is important in display technologies using colloidal quantum dots in a precursor solution to ensure one colour does not dominate the emitted spectrum. Results obtained in-terms of brightness were superior to those achieved with inkjet deposition. This study has shown that mist deposition is a viable method for patterned deposition applied to quantum dot light emitting diode display technologies.

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Colloidal nanocrystal-based light-emitting diodes fabricated on plastic toward flexible quantum dot optoelectronics

Cited by 52 publications

References 23 publications

Inorganic-ligand exchanging time effect in PbS quantum dot solar cell

Inorganic-ligand exchanging time effect in PbS quantum dot solar cell

Three-State Quantum Dot Gate FETs Using ZnS-ZnMgS Lattice-Matched Gate Insulator on Silicon

Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices

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