Lightâemitting fieldâeffect transistors (LEFETs) are emerging optoelectronic devices able to display simultaneously electrical switching as transistors and electroluminescence emission as light emitting diodes. Lead chalcogenide colloidal quantum dots (CQDs) allow achieving light emission in a very broad spectral range, covering the nearâinfrared (NIR) and the shortâwavelength infrared (SWIR) regions, which cannot be reached with other solutionâprocessable materials. Therefore, the use of lead chalcogenide CQDs as active layer in LEFETs opens the possibility for very narrow and switchable light sources in the NIR and SWIR range. The recently reported, first fully solidâstate lead chalcogenide (PbS) CQD based LEFET shows an electroluminescence (EL) quantum efficiency of 1.3 Ă 10â5 at room temperature and of about 1% below 100 K. To overcome the limits of a previous report, an active material comprising two sequentially deposited layers is designed, the first of PbS CQDs displaying nâtype transport and the second of polymerâwrapped semiconducting carbon nanotubes displaying pâtype dominated transport. With this double layer system, LEFETs displaying a wellâbalanced ambipolar transport, charge carrier mobility of about 0.2 cm2 Vâ1 sâ1 for both electrons and holes, and EL external quantum efficiency reaching 1.2 Ă 10â4 at room temperature are obtained.