Collision retardation and its role in femtosecond-laser excitation of semiconductor plasmas

Ferry, D. K.; Kriman, A. M.; Hida, H.; Yamaguchi, S.

doi:10.1103/physrevlett.67.633

Cited by 34 publications

(9 citation statements)

References 29 publications

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“…Numerical studies [19][20][21][22] of the Levinson equation reveal quantum effects of collision broadening, retardation, and the intracollisional field effect. These effects, related to the finite duration of the collision process, have been investigated by Ferry and Barker,16,[23][24][25][26] the Modena group, 13,[27][28][29][30] and others 21,31-33 for ultrafast and/or high-field transport in semiconductors and insulators, and Rossi and Kuhn 18,34,35 and others 36,37 in photoexcited semiconductors. The solutions of the Levinson equation demonstrate the establishment of the classical, energy conserving delta function for long times.…”

Section: A the Wigner-boltzmann-transportmentioning

confidence: 99%

Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

et al. 2004

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Small semiconductor devices can be separated into regions where the electron transport has classical character, neighboring with regions where the transport requires a quantum description. The classical transport picture is associated with Boltzmann-like particles that evolve in the phase-space defined by the wave vector and real space coordinates. The evolution consists of consecutive processes of drift over Newton trajectories and scattering by phonons. In the quantum regions, a convenient description of the transport is given by the Wigner-function formalism. The latter retains most of the basic classical notions, particularly, the concepts for phase-space and distribution function, which provide the physical averages. In this work we show that the analogy between classical and Wigner transport pictures can be even closer. A particle model is associated with the Wigner-quantum transport. Particles are associated with a sign and thus become positive and negative. The sign is the only property of the particles related to the quantum information. All other aspects of their behavior resemble Boltzmann-like particles. The sign is taken into account in the evaluation of the physical averages. The sign has a physical meaning because positive and negative particles that meet in the phase space annihilate one another. The Wigner and Boltzmann transport pictures are explained in a unified way by the processes drift, scattering, generation, and recombination of positive and negative particles. The model ensures a seamless transition between the classical and quantum regions. A stochastic method is derived and applied to simulation of resonant-tunneling diodes. Our analysis shows that the method is useful if the physical quantities do not vary over several orders of magnitude inside a device.

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Section: A the Wigner-boltzmann-transportmentioning

confidence: 99%

Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

et al. 2004

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“…Attempts to account for such collision broadening in Monte Carlo simulation have been reported in the literature [39,40], although this is still an open subject of debate. Inclusion of the effects of finite collision duration in Monte Carlo simulation have also been proposed [41,42]. Beyond this, there is still the problem of dealing with the quantum mechanical phase coherence of carriers, which is neglected in the scatter free-flight algorithm of the Monte Carlo algorithm, and goes beyond the semiclassical BTE description.…”

Section: Scattering Processesmentioning

confidence: 99%

Computational Electronics

Vasileska¹,

Goodnick²

2006

Synthesis Lectures on Computational Electromagnetics

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Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational Electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurrent need to reduce the time from design to manufacture. The motivation for this volume is the need within the modeling and simulation community for a comprehensive text which spans basic drift-diffusion modeling, through energy balance and hydrodynamic models, and finally particle based simulation. One unique feature of this book is a specific focus on numerical examples, particularly the use of commercially available software in the TCAD community. The concept for this book originated from a first year graduate course on Computational Electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University. Numerous exercises and projects were derived from this course and have been included. The prerequisite knowledge is a fundamental understanding of basic semiconductor physics, the physical models for various device technologies such as pn diodes, bipolar junction transistors, and field effect transistors.

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“…12,13 Nevertheless, detailed Monte Carlo studies have indicated that a finite collision duration could affect the observed relaxation of the hot electron plasma. 14 A surprisingly unified picture emerges from the previously mentioned work, although the earlier work dealt with localized electrons and the later work with nearly-free electrons ͑describable by a single momentum state͒. All of the studies are concerned with a perturbative regime of single electron-photon ͑or phonon͒ events that can be treated by perturbation theory.…”

Section: Introductionmentioning

confidence: 95%

Collision-duration time for optical-phonon emission in semiconductors

1996

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The time required to emit an optical ͑polar and intervalley͒ phonon by a nearly-free electron in a semiconductor is evaluated using a nonequilibrium Green's-function formalism. The leading idea of the work is that the so-called ''collision duration'' is related to the time required to build up correlation between the initial and the final state, and then to destroy this correlation as the collision is completed. The use of the nonequilibrium Green's-function formalism gives us the possibility to evaluate explicitly the effects of the correlations in time. Our approach is based on two crucial assumptions: we build the self-energy from only the polarization field of the polar-optical phonon; that is, the self-energy is a function of a single time and position, and we introduce the electron correlation function between the initial and the final states, written in terms of a generalized less-than Green's function in the momentum variables. We derive an analytical expression for the probability for a carrier to end up in a final state k as a consequence of the emission of a phonon as a function of time. We find that the probability rises to the ''Fermi golden rule'' result within a few femtoseconds. If the total lifetime broadening of the initial state is comparable to the scattering time, the probability oscillates as it approaches the asymptotic value. For larger initial-state broadening ͑due to more scattering processes͒, these oscillations disappear.

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Collision retardation and its role in femtosecond-laser excitation of semiconductor plasmas

Cited by 34 publications

References 29 publications

Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

Computational Electronics

Collision-duration time for optical-phonon emission in semiconductors

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