Collector Engineered Bidirectional Insulated Gate Bipolar Transistor With Low Loss

Vaidya, Mahesh; Naugarhiya, Alok; Verma, Shrish; Mishra, Guru Prasad

doi:10.1109/ted.2022.3141989

Cited by 5 publications

(4 citation statements)

References 24 publications

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“…The concept of RB-IGBT modules is still being developed. In [10], the novel concept of an IGBT with bidirectional blocking capability with improvement in E off and V on reduction was demonstrated, and in [11] the novel concept of N-channel RB-IGBT with low energy losses and a simplified fabrication process was proposed.…”

Section: Introductionmentioning

confidence: 99%

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

Mondzik

2023

Energies

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This article presents the concept of switching and conduction loss reduction in a T-NPC inverter based on IGBT transistors. The method of limiting switching losses involves the connection of an LC circuit designed to cause transistors in vertical branches to shut down under zero voltage conditions. In order to reduce conduction losses, it was proposed to use two reverse blocking transistors connected anti-parallel in the horizontal branch of the inverter. To ensure safe operation of the transistors, a gate driver proposal for controlling the IGBT reverse blocking transistor is presented. The solution is characterized by a changed part of the driver, responsible for short-circuit protection. It eliminates excessive, destructive currents that can potentially flow through the driver circuit under the influence of the power supply voltage of the power circuit connected backwards to the controlled transistor. Examples of applications and benefits of the proposed solution are presented and verified with laboratory tests.

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Section: Introductionmentioning

confidence: 99%

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

Mondzik

2023

Energies

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“…逆导型IGBT在集电极处为电子提供了通路, 从而能快速关断, 减小关断损耗 [6] . 此外, 载流子存储层沟槽栅IGBT [7] , 具有P型环和点注入的沟槽栅 IGBT结构 [8] , 具有自偏置PMOS的IGBT 结构 [9] , 以及最近提出的集电极工程半超结双向 IGBT、阶梯分离式沟槽栅IGBT、平面阳极栅超结IGBT [10][11][12] , 都可以改善正向导通压降和关断损耗之间的折中.…”

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Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction

Duan,

Liu,

Tang

et al. 2024

Acta Phys. Sin.

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Insulated Gate Bipolar Transistor (IGBT) is the core of modern power semiconductor devices, and has been widely applied due to its excellent electrical characteristics. A novel majority carrier accumulation mode IGBT with Schottky junction contact gate semiconductor layer (AC-SCG IGBT) is proposed and investigated by TCAD simulation in this article. When AC-SCG IGBT is in the on-state, a forward bias is applied to the gate. Due to the very low forward voltage drop (VF) of the Schottky barrier diode, the potential of the gate semiconductor layer is almost equal to the gate potential, which can accumulate a large number of majority carrier electrons in the drift region. In addition to the existing electrons, these accumulated electrons increase the conductivity of the drift region, thus significantly reducing VF. Therefore, the doping concentration of the drift region is not limited by VF. The lightly doped drift region can make AC-SCG IGBT have a higher breakdown voltage (BV). Moreover, it also reduces the barrier capacitance during the turn-off process, thus the overall Miller capacitance is small, which can quickly turn off and reduce the turn-off time (Toff) and turn-off loss (Eoff). The simulation results indicate that at the BV of 600V, the VF of 0.84V for the proposed AC-SCG IGBT is reduced by 46.2% compared with the conventional IGBT (VF of 1.56V). The Eoff of the AC-SCG IGBT (0.77mJ/cm2) is reduced by 52.5% compared with the conventional IGBT (1.62mJ/cm2) and the Toff (155.8ns-222.7ns) is reduced by 30%. The contradiction between VF and Eoff is broken. In addition, the proposed AC-SCG IGBT has better anti-latch-up ability, and coupled with its higher BV, it has a larger forward biased safe operating area (FBSOA). The proposed novel structure meets the development requirements of future IGBT device performance, and has great guiding significance for the power semiconductor device field.

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“…However, to improve the trade-off between E off and V on with increment in breakdown voltage, few drift engineering techniques have also been applied in IGBT. [10][11][12][13][14] The controllable trench gate (CTG) at the collector side is implemented to control the minority carrier injection with the nature of applied potential difference between CTG and collector terminal. This technique reduces the E off and V on by 34% and 74%, respectively.…”

mentioning

confidence: 99%

“…The bidirectional IGBT also provides the 54% improvement in the reverse voltage handling ability by uniform electric distribution, which is achieved by the incorporation of p-buffer region above the n-buffer. 14 Apart from Silicon based devices, few gate side engineering techniques have also been incorporated into SiC power devices to improve their dynamic performance. [15][16][17][18] In this article, a new structure of trench IGBT with stepped oxide gate is proposed to improve the performance of the device.…”

mentioning

confidence: 99%

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2022

ECS J. Solid State Sci. Technol.

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A gate engineering technique was used in an insulated gate bipolar transistor (IGBT) for fast switching applications. The modification consists of stepped oxide pattern at gate terminal with n-poly layer sandwiched between two p-poly layers. The oxide thickness increases from top to bottom to create a stepped structure. The oxide is thinner on the channel side and thicker on the collector side. The thinner oxide on the channel side increases gate to emitter charges (QGE) by extracting extra charges along the channel. The presence of these extra charges also increases the collector current density resulting in a reduction in the area specific on-resistance (Ron.A). Furthermore, to elongate the impact of QGC reduction, the low doped p-col region has been facilitated which also play an important role to increase the breakdown voltage by reducing corner electric field. This p-col region creates a charge extraction path to sweep out charges from the drift region during a turn-off event, leading to rapid turn-off. The collective improvement in QGE and QGC provides fast switching to the proposed device by improving turn-off time by 63% and reduces turn-off loss (Eoff) by 55% as compared to the conventional device

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Collector Engineered Bidirectional Insulated Gate Bipolar Transistor With Low Loss

Cited by 5 publications

References 24 publications

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

T-NPC Soft-Commutated Inverter Based on Reverse Blocking IGBTs with the Novel Concept of a DESAT Control Circuit in the Gate Driver

Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction

1.2 kV Stepped Oxide Trench Insulated Gate Bipolar Transistor with Low Loss for Fast Switching Application

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