Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects

Carapezzi, Stefania; Castaldini, A.; Fabbri, Filippo; Rossi, Francesca; Negri, Mario; Salviati, G.; Cavallini, A.

doi:10.1039/c6tc02625g

Cited by 19 publications

(12 citation statements)

References 64 publications

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“…Herein, a new method for 2H‐SiC flexible, transparent, self‐standing nanowire fabric (FTS‐NWsF) formation via a simple one‐step chemical vapor deposition (CVD) process is reported, motivated by the fact that SiC is an important third‐generation semiconductor that is widely applied in microelectronics . The nanowire quality stands alongside the self‐assembly of the nanowire fabric as another stubborn difficulty, because the occurrence of complex planar stacking faults (SFs) is a ubiquitous and uncontrollable event . This feature and the indirect nature of their bandgap mean that SiC nanowires are seldom applied for photonic purposes because of the screening effects of phonon processes, despite their many advantages, including being well suited to high‐frequency, high‐power, and high‐temperature devices, and possessing anticorrosion and radio resistance properties .…”

Section: Introductionmentioning

confidence: 99%

“…[19][20][21] The nanowire quality stands alongside the self-assembly of the nanowire fabric as another stubborn difficulty, because the occurrence of complex planar stacking faults (SFs) is a ubiquitous and uncontrollable event. [22][23][24][25][26] This feature and the indirect nature of their bandgap mean that SiC nanowires are seldom applied for photonic purposes because of the screening effects of phonon processes, despite their many advantages, including being well suited to high-frequency, highpower, and high-temperature devices, and possessing anticorrosion and radio resistance properties. [27,28] We here demonstrate the self-assembly of 2H-SiC FTS-NWsF using airflow-oriented growth to form a nanowire network, and the elimination of dense planar SFs by the introduction of Al and O dopants.…”

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confidence: 99%

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Flexible Transparent and Free‐Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast‐Response UV‐A Detector

Sun

Wang

2018

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Transparent and flexible materials are desired for the construction of photoelectric multifunctional integrated devices and portable electronics. Herein, 2H-SiC nanowires are assembled into a flexible, transparent, self-standing nanowire fabric (FTS-NWsF). The as-synthesized ultralong nanowires form high-quality crystals with a few stacking faults. The optical transmission spectra reveal that FTS-NWsF absorbs most incident 200-400 nm light, but remains transparent to visible light. A polydimethylsiloxane (PDMS)-SiC fabric-PDMS sandwich film device exhibits stable electrical output even when repeatedly stretched by up to 50%. Unlike previous SiC nanowires in which stacking faults are prevalent, the transparent, stretchable SiC fabric shows considerable photoelectric activity and exhibits a rapid photoresponse (rise and decay time < 30 ms) to 340-400 nm light, covering most of the UV-A spectral region. These advances represent significant progress in the design of functional optoelectronic SiC nanowires and transparent and stretchable optoelectronic systems.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Flexible Transparent and Free‐Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast‐Response UV‐A Detector

Sun

Wang

2018

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“…Although less extensive than the family of nanocarbons, there have been various theoretical and experimental research projects conducted on FE for a variety of semiconducting materials since the 1960s [37]. Generally, the FE of n-type high-resistance and p-type semiconductors shows non-linear Fowler-Nordheim (F-N) behavior [27,[38][39][40][41]. Such J-E profiles can be broadly divided into three regions.…”

Section: Resultsmentioning

confidence: 99%

“…As a function of increasing field strength, these include: (1) standard F-N or zero current approximation; (2) saturation region, in which emission is limited by an insufficient supply of carriers due to a p-n junction inverse bias; and (3) rapid increase in emission current as the field penetration becomes sufficient for impact ionization in the space-charge region allowing the carrier density to increase progressively [38]. Others have reported on the electron emission from SiC nanoarrays [41][42][43], noting F-N-like emission where [44],…”

Section: Resultsmentioning

confidence: 99%

Stable Field Emission from Vertically Oriented SiC Nanoarrays

et al. 2021

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Silicon carbide (SiC) nanostructure is a type of promising field emitter due to high breakdown field strength, high thermal conductivity, low electron affinity, and high electron mobility. However, the fabrication of the SiC nanotips array is difficult due to its chemical inertness. Here we report a simple, industry-familiar reactive ion etching to fabricate well-aligned, vertically orientated SiC nanoarrays on 4H-SiC wafers. The as-synthesized nanoarrays had tapered base angles >60°, and were vertically oriented with a high packing density >107 mm−2 and high-aspect ratios of approximately 35. As a result of its high geometry uniformity—5% length variation and 10% diameter variation, the field emitter array showed typical turn-on fields of 4.3 V μm−1 and a high field-enhancement factor of ~1260. The 8 h current emission stability displayed a mean current fluctuation of 1.9 ± 1%, revealing excellent current emission stability. The as-synthesized emitters demonstrate competitive emission performance that highlights their potential in a variety of vacuum electronics applications. This study provides a new route to realizing scalable field electron emitter production.

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“…So far, several methods have been used to grow SiC nanowires. These synthesis methods include chemical vapor deposition (CVD) 12 , 17 , 23 , carbonthermal reduction 13 , 24 , vapor phase epitaxy 26 , arc-discharge 7 and solid state reaction route 27 , etc. Among these the chemical vapor deposition (CVD) is the easiest and mostly used method because of the high possibility of large area growth and easy to control the shape and composition of the products 28 , 29 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Chen

Chi

Hsu

et al. 2021

Sci Rep

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In this study, the high-density SiC/SiO2 core–shell nanowires were synthesized on the nickel coated SiO2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO2 nanowires.

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Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects

Abstract: Photo-enhanced field emission from SiC nanowires showed the presence of a saturation region, which is of interest for nanotechnological applications.

Cited by 19 publications

References 64 publications

Flexible Transparent and Free‐Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast‐Response UV‐A Detector

Flexible Transparent and Free‐Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast‐Response UV‐A Detector

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

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