2009
DOI: 10.1088/1742-6596/185/1/012029
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Coincidence measurements of secondary ions and scattered ions in collision between slow Ar6+and a GaN(0001) surface

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Cited by 2 publications
(9 citation statements)
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“…7,9) However, the observed PS was not the dominant process because the number of scattered Ar þ ions was only 23% of that of all scattered Ar atoms/ions. 7) Therefore, it is very important to observe PS of protons by coincidence measurements of scattered Ar atoms, which are produced by the dominant scattering process.…”
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confidence: 99%
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“…7,9) However, the observed PS was not the dominant process because the number of scattered Ar þ ions was only 23% of that of all scattered Ar atoms/ions. 7) Therefore, it is very important to observe PS of protons by coincidence measurements of scattered Ar atoms, which are produced by the dominant scattering process.…”
mentioning
confidence: 99%
“…The potential sputtering (PS) induced by slow multicharged ion impacts is increasingly attracting attention from this point of view, 5) because of its two features of sitespecific desorption and slight damage to the bulk. [6][7][8][9][10][11][12] The author succeeded in direct observation of PS of protons on the GaN surfaces irradiated with Ar 6þ by a coincidence measurement of scattered Ar þ ions. 7,9) However, the observed PS was not the dominant process because the number of scattered Ar þ ions was only 23% of that of all scattered Ar atoms/ions.…”
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confidence: 99%
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