Cohesive Zone Parameters for a Cyclically Loaded Copper-Epoxy Molding Compound Interface

Samet, David; Kwatra, Abhishek; Sitaraman, Suresh K.

doi:10.1109/ectc.2016.364

Cited by 4 publications

(4 citation statements)

References 26 publications

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“…As the results show, adhesion varies significantly with changes in the graphene used. The values found for the interface of silicon and graphene are very similar to the Mode I fracture energy (G Ic ) found for the interface of EMC and copper, as Samet et al [6] show. Wang et al [7] assessed interfacial fracture toughness in flip-chip packages and bimaterial systems, using a six-axis submicron tester, thermal chamber, FEM modeling, and laser interferometry.…”

Section: Introductionsupporting

confidence: 80%

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Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Adler,

Morais,

Akhavan-Safar

et al. 2024

Materials

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Examining crack propagation at the interface of bimaterial components under various conditions is essential for improving the reliability of semiconductor designs. However, the fracture behavior of bimaterial interfaces has been relatively underexplored in the literature, particularly in terms of numerical predictions. Numerical simulations offer vital insights into the evolution of interfacial damage and stress distribution in wafers, showcasing their dependence on material properties. The lack of knowledge about specific interfaces poses a significant obstacle to the development of new products and necessitates active remediation for further progress. The objective of this paper is twofold: firstly, to experimentally investigate the behavior of bimaterial interfaces commonly found in semiconductors under quasi-static loading conditions, and secondly, to determine their respective interfacial cohesive properties using an inverse cohesive zone modeling approach. For this purpose, double cantilever beam specimens were manufactured that allow Mode I static fracture analysis of the interfaces. A compliance-based method was used to obtain the crack size during the tests and the Mode I energy release rate (GIc). Experimental results were utilized to simulate the behavior of different interfaces under specific test conditions in Abaqus. The simulation aimed to extract the interfacial cohesive contact properties of the studied bimaterial interfaces. These properties enable designers to predict the strength of the interfaces, particularly under Mode I loading conditions. To this extent, the cohesive zone modeling (CZM) assisted in defining the behavior of the damage propagation through the bimaterial interfaces. As a result, for the silicon–epoxy molding compound (EMC) interface, the results for maximum strength and GIc are, respectively, 26 MPa and 0.05 N/mm. The second interface tested consisted of polyimide and silicon oxide between the silicon and EMC layers, and the results obtained are 21.5 MPa for the maximum tensile strength and 0.02 N/mm for GIc. This study’s findings aid in predicting and mitigating failure modes in the studied chip packaging. The insights offer directions for future research, focusing on enhancing material properties and exploring the impact of manufacturing parameters and temperature conditions on delamination in multilayer semiconductors.

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Section: Introductionsupporting

confidence: 80%

“…Kim et al [11] and Samet et al [12] used double cantilever beams (DCBs). This is a similar approach to the one Samet et al [6] used for copper and EMC interfaces. It is important to mention the influence of external factors on the results obtained through the tests.…”

Section: Introductionmentioning

confidence: 98%

Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Adler,

Morais,

Akhavan-Safar

et al. 2024

Materials

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“…One of the most extensively researched interactions is between epoxy molding compound (EMC) and copper (Cu). Samet [1,2] focused on delamination in EMC-Cu interfaces under fatigue loading by using DCB, four-point-bending (4PB), and dissimilarmixed-mode-bending (DMMB) tests. The slope of the Paris law curve m showed a clear dependency on mode mixity.…”

Section: Introductionmentioning

confidence: 99%

Mode I Fatigue and Fracture Assessment of Polyimide–Epoxy and Silicon–Epoxy Interfaces in Chip-Package Components

Morais,

Akhavan-Safar,

Carbas

et al. 2024

Polymers

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Semiconductor advancements demand greater integrated circuit density, structural miniaturization, and complex material combinations, resulting in stress concentrations from property mismatches. This study investigates the failure in two types of interfaces found in chip packages: silicon–epoxy mold compound (EMC) and polyimide–EMC. These interfaces were subjected to quasi-static and fatigue loading conditions. Employing a compliance-based beam method, the tests determined interfacial critical fracture energy values, (GIC), of 0.051 N/mm and 0.037 N/mm for the silicon–EMC and polyimide–EMC interfaces, respectively. Fatigue testing on the polyimide–epoxy interface revealed a fatigue threshold strain energy, (Gth), of 0.042 N/mm. We also observed diverse failure modes and discuss potential mechanical failures in multi-layer chip packages. The findings of this study can contribute to the prediction and mitigation of failure modes in the analyzed chip packaging. The obtained threshold energy and crack growth rate provide insights for designing safe lives for bi-material interfaces in chip packaging under cyclic loads. These insights can guide future research directions, emphasizing the improvement of material properties and exploration of the influence of manufacturing parameters on delamination in multilayer semiconductors.

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“…Relatively few studies have experimentally characterized interfacial FCP under constant stress amplitude loading, namely for metal-ceramic [1][2][3][4][5][6][7], ceramic-ceramic [8], polymer-metal [9][10][11][12][13], and polymer-glass [14] interfaces. Only a handful of these report delamination growth ratesfor systems involving thin films with thickness less than 10 µm [1,5,7,8,10].…”

Section: Introductionmentioning

confidence: 99%

Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

Ostrowicki

Sitaraman

2016

Engineering Fracture Mechanics

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Interfacial fatigue crack characterization is challenging for as-deposited thin films due to issues with fixturing and precision application of cyclic loading. A fixtureless and microfabricatedtest technique is presented to characterize delamination propagation rate as a function of constant amplitude fatigue loading using a novel peel test configuration and magnetic actuation. The test was demonstrated for 1.6 µm thick Cu films on a Si substrate, where interfacial fatigue crack propagation was observed to follow Paris Law behavior.

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Cohesive Zone Parameters for a Cyclically Loaded Copper-Epoxy Molding Compound Interface

Cited by 4 publications

References 26 publications

Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach

Mode I Fatigue and Fracture Assessment of Polyimide–Epoxy and Silicon–Epoxy Interfaces in Chip-Package Components

Cyclic magnetic actuation technique for thin film interfacial fatigue crack propagation

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