Coherent transport through a coupled-quantum-dot system with strong intradot interaction

Niu, C.; Liu, Lijun; Lin, Tie

doi:10.1103/physrevb.51.5130

Cited by 58 publications

(35 citation statements)

References 14 publications

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“…With increasing voltage the dot levels start to split. I−V characteristics calculated for DQD attached to non-magnetic leads (p = 0) are very similar to the ones found by Niu and Liu [9]. Here, we report only results obtained for systems with ferromagnetic electrodes characterized by polarization factor p. I−V characteristics were taken for various values of inter-dot coupling V M and polarization factor p. Two collinear magnetic configurations, parallel (P) and antiparallel (AP) of magnetic moments in the electrodes were investigated.…”

Section: Numerical Resultssupporting

confidence: 73%

Spin Polarized Transport through the Double-Dot System

Sztenkiel

Świrkowicz

2005

Acta Phys. Pol. A

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Section: Numerical Resultssupporting

confidence: 73%

Spin Polarized Transport through the Double-Dot System

Sztenkiel

Świrkowicz

2005

Acta Phys. Pol. A

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“…Later the same method was applied to some two-site models [206,207,208,209]. Multi-level systems were started to be considered only recently [210,211].…”

Section: General Nanoscale Quantum Transport Theorymentioning

confidence: 99%

“…[205] Later the same method was applied to some two-site models. [206,207,208,214] Multi-level systems were started to be considered only recently. [210,211] For out-of-equilibrium situations (finite applied bias), there are some methodological unclarified issues for calculating correlation functions using EOM techniques.…”

Section: Coulomb Blockadementioning

confidence: 99%

Green Function Techniques in the Treatment of Quantum Transport at the Molecular Scale

Ryndyk

Gutiérrez²,

Song

2009

Springer Series in Chemical Physics

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The theoretical investigation of charge (and spin) transport at nanometer length scales requires the use of advanced and powerful techniques able to deal with the dynamical properties of the relevant physical systems, to explicitly include out-of-equilibrium situations typical for electrical/heat transport as well as to take into account interaction effects in a systematic way. Equilibrium Green function techniques and their extension to non-equilibrium situations via the Keldysh formalism build one of the pillars of current state-of-the-art approaches to quantum transport which have been implemented in both model Hamiltonian formulations and first-principle methodologies. In this chapter we offer a tutorial overview of the applications of Green functions to deal with some fundamental aspects of charge transport at the nanoscale, mainly focusing on applications to model Hamiltonian formulations.

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“…A more accurate description is based on the nonequilibrium Green functions (NGFs) [21,22]. The tunneling current J s can be then calculated from the formula [21,22] …”

mentioning

confidence: 99%

Spin related effects in magnetic mesoscopic systems

Barnaś

Dugaev

Krompiewski

et al. 2003

Physica Status Solidi (b)

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Spin effects in transport properties of double-barrier mesoscopic junctions are analyzed and their possible applications in spintronics devices are discussed. In a general case, external electrodes of the junctions are ferromagnetic and the central electrode is either a nonmagnetic metallic grain or a semiconducting quantum dot. Transport characteristics depend then on magnetic configuration of the system. When the spin relaxation time on the central electrode is sufficiently long, measurable spin effects can also occur in entirely nonmagnetic devices.Introduction Successful applications of giant magnetoresistance effect in read/write heads and magnetic field sensors initiated broad interest in spin-polarized transport in mesoscopic systems-mainly due to expected applications in magnetoelectronics and spintronics devices [1]. This applies to electronic transport in the metallic and semiconducting regimes (like in magnetic all-metal or all-semiconductor layered structures, and in metal-semiconductor hybrid systems), as well as to systems including insulating barriers, where electronic transport is due to tunneling processes. In this paper we restrict ourselves to the latter situation, and particularly to double-barrier mesoscopic junctions which consist of two external electrodes (magnetic or nonmagnetic) and a central electrode (also referred to as an island) that can be either a metallic grain or a quantum dot based on 2D electron gas.The effect that is crucial for most of the spin related phenomena discussed in this paper is the tunnel magnetoresistance (TMR) effect in simple planar junctions consisting of two ferromagnetic electrodes separated by an insulating barrier. Rotation of the magnetic moments of the electrodes from antiparallel to parallel alignment is then accompanied by a drop (usually) in the junction resistance [2]. Similar TMR effects exist also in complex junctions, like double-barrier planar junctions [3], granular systems [4], and mesoscopic double-barrier junctions [5][6][7]. The following discussion will be restricted to the latter case.When the central electrode (island) of a double-barrier junction is small, the corresponding capacitance C can be small as well. One can then reach the regime, where the charging energy, E c ¼ e 2 =2C,

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Coherent transport through a coupled-quantum-dot system with strong intradot interaction

Cited by 58 publications

References 14 publications

Spin Polarized Transport through the Double-Dot System

Spin Polarized Transport through the Double-Dot System

Green Function Techniques in the Treatment of Quantum Transport at the Molecular Scale

Spin related effects in magnetic mesoscopic systems

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