Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube

Tsukagoshi, Kazuhito; Alphenaar, Bruce W.; Ago, Hiroki

doi:10.1038/44108

Cited by 765 publications

(588 citation statements)

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“…OSs are expected to possess a large spin-dependent transport (SDT) length due to their weak spin-orbit coupling and weak hyperfine interaction [1][2][3][4][5][6] . The SDT phenomenon at room temperature via a tunnelling mechanism has been studied in several different OSs [7][8][9][10][11][12] .…”

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confidence: 99%

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Observation of a large spin-dependent transport length in organic spin valves at room temperature

et al. 2013

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The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin-orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C 60 as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C 60 layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.

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confidence: 99%

“…Most importantly, a large SDT length of approximately 110 nm was experimentally observed in the C 60 layer at room temperature. This research may strongly motivate the development of spin-based organic devices, such as organic spin valves [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] and spin-based organic light-emitting diodes 20 .…”

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confidence: 99%

Observation of a large spin-dependent transport length in organic spin valves at room temperature

et al. 2013

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“…The only practical way of accessing the spin diffusion in organic spin devices is by measuring the magnetoresistance 2,3,[10][11][12] or by tunnelling into a superconductor 13 . The former technique does not distinguish between the different sources of spin decoherence in these complex devices whereas the latter provides this information only at a particular interface.…”

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confidence: 99%

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation

et al. 2008

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Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin polarization across different layers and interfaces. This complex transfer process depends on individual material properties and also, most importantly, on the structural and electronic properties of the interfaces between the different materials and defects that are common to real devices. Knowledge of these factors is especially important for the relatively new field of organic spintronics, where there is a severe lack of suitable experimental techniques that can yield depth-resolved information about the spin polarization of charge carriers within buried layers of real devices. Here, we present a new depth-resolved technique for measuring the spin polarization of current-injected electrons in an organic spin valve and find the temperature dependence of the measured spin diffusion length is correlated with the device magnetoresistance.R ecently great efforts have been undertaken to use the spin degree of freedom in electronic devices. These activities are fuelled by the potential prospects of spin-electronic (or 'spintronic') devices for example in terms of increased processing speed and integration, non-volatility, reduced power consumption, multifunctionality and their suitability for quantum computing 1 . The most common method for using the spin in devices is based on the alignment of the electron spin ('up' or 'down') relative to either a reference magnetic field or the magnetization orientation of a ferromagnetic layer. Device operation normally proceeds with measuring a quantity such as the electrical current that depends on how the degree of spin alignment is transferred across the device. The so-called 'spin valve' is a prominent example of such a spin-enabled device that has already revolutionized hard-drive read heads and magnetic memory 1 . The efficient transfer of spin polarization in real device structures remains one of the most difficult challenges in spintronics, because it is dependent on more than just the properties of the individual materials that comprise the device.Recently 2,3 , the use of organic materials in spintronics has become of significant interest, primarily owing to their ease and small cost of processing and electronic and structural flexibility. Furthermore, the extremely long spin coherence times found in organic materials offer considerable advantages over other materials 3 . This favourable property is related to two factors, first the weak spin-orbit coupling of light elements such as carbon and second to the small nuclear hyperfine interaction 4,5 . The latter arises because the electron transport in π-conjugated molecules is normally confined to molecular states, delocalized to the carbon rings, the predominant isotope of which, 12 C, has zero nuclear spin 4 .A common way to measure spin diffusion is based on time-resolved optical techniques, where spin-polarized charge carrie...

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“…To observe the discrete electronic states in transport characteristics one should either diminish size of the metallic nanoparticles [17], or use semiconducting quantum dots based on two-dimensional electron gas [18]. Another group of single-electron devices are molecular ferromagnetic transistors, and especially ferromagnetically contacted carbon nanotubes [19].…”

Section: Tunnel Junctionsmentioning

confidence: 99%

Spin-Dependent Phenomena in Magnetoelectronic Devices

et al. 2007

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Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube

Cited by 765 publications

References 21 publications

Observation of a large spin-dependent transport length in organic spin valves at room temperature

Observation of a large spin-dependent transport length in organic spin valves at room temperature

Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation

Spin-Dependent Phenomena in Magnetoelectronic Devices

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