electronic devices-which are nearly at their physical limits. [3] In addition, taking advantage of spin interactions in optoelectronic devices will enable the improvement of their efficiency and/or stability (e.g., organic solar cells and organic lightemitting diodes (OLEDs)) and the development of new spin-based multifunctional devices (e.g., spin OLEDs, multifunctional organic spin-valve devices). [4,5,6,7] A crucial milestone in the development of spintronics was the discovery of the giant magnetoresistance (GMR) effect in 1988. [8] Through the giant magnetoresistance mechanism, the operating principles of, e.g., magnetic disk drives, i.e., the collective magnetization of localized spins in ferromagnetic layers, have been replaced by the electronic conduction depending on the electron spin state, which gave rise to new devices, like magnetic random access memories (MRAMs). [9] Since this discovery, spin properties of electronic materials have been the focus of extensive research to rationalize, e.g., the spin relaxation and spin transport mechanisms in metals and in semiconductors. This increased interest has favored an unprecedented transition from basic research to industrial commercialization. As a result, the first GMR device as a magnetic field sensor was commercialized in 1994; [10] and read heads for magnetic hard disk drives were announced in 1997 by International Business Machines Corporation (IBM). [11] By delving deeper into the fundamental physics underlying spintronic devices, Stuart Parkin spurred the development of this field and ushered spintronic commercial applications. For instance, hard disk drives featuring a read head based on Parkin's discoveries dominated the market for two decades. Currently, GMRbased read heads have been replaced by something called giant tunneling magnetoresistance devices, which exploit a spintronic phenomenon where electrons tunnel through a thin insulator. [12] The swift evolution of the spintronic field has been buoyed by new emerging phenomena that hold great promise for the future of nonvolatile magnetic memories, e.g., skyrmions and chiral spin torque, which is at the basis of racetrack memories. [13,14] Despite this great success, several open issues in the field of spintronics are yet to be addressed, for example, the successful spin injection into multilayer devices and the optimization of spin lifetimes in these structures, the transport of spin-polarized carriers across relevant length scales and heterointerfaces, the detection of spin coherence in nanoscale structures, and the manipulation of both electron and nuclear spins on sufficiently fast time scales. [15] The success of the research efforts can be guaranteed only by a thorough understanding of the fundamental spin interactions in solid-state materials as well as the role Spin-related phenomena in optoelectronic materials can revolutionize several technological applications in the areas of data processing and storage, quantum computing, lighting, energy harvesting, sensing, and healthcare. A fundam...