2017
DOI: 10.1038/s41598-017-04891-3
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Coherent scatter-controlled phase-change grating structures in silicon using femtosecond laser pulses

Abstract: Periodic structures of alternating amorphous-crystalline fringes have been fabricated in silicon using repetitive femtosecond laser exposure (800 nm wavelength and 120 fs duration). The method is based on the interference of the incident laser light with far- and near-field scattered light, leading to local melting at the interference maxima, as demonstrated by femtosecond microscopy. Exploiting this strategy, lines of highly regular amorphous fringes can be written. The fringes have been characterized in deta… Show more

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Cited by 50 publications
(52 citation statements)
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References 27 publications
(39 reference statements)
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“…It is worth noticing that the formation of periodic patterns of amorphous and crystalline regions was recently reported during few pulses fs laser irradiation of p-doped (100) silicon 17 . Moreover, extension of this fringe pattern over larger areas and period tuning by appropriate selection of the experimental conditions have also been recently demonstrated 18 , 19 . Differently from the present investigation, in the previous cases the fringe pattern forms in air at the center of the irradiation spot in sub-ablative experimental conditions.…”
Section: Introductionmentioning
confidence: 75%
“…It is worth noticing that the formation of periodic patterns of amorphous and crystalline regions was recently reported during few pulses fs laser irradiation of p-doped (100) silicon 17 . Moreover, extension of this fringe pattern over larger areas and period tuning by appropriate selection of the experimental conditions have also been recently demonstrated 18 , 19 . Differently from the present investigation, in the previous cases the fringe pattern forms in air at the center of the irradiation spot in sub-ablative experimental conditions.…”
Section: Introductionmentioning
confidence: 75%
“…Despite the importance of , there are surprisingly few works on systematic studies of this parameter, and these works are limited to a very narrow selection of materials. 2,[22][23][24][25] For the specific case of metals, the wave propagating at the surface that contributes to ripple formation is generally identified as a surface plasmon polariton [26][27][28][29] coupled in from the incident light with help from a non-negligible surface roughness. The role of surface roughness is thus to impart momentum to the incident wave, bridging the momentum mismatch between the parallel component of the wavevector of such incident wave with that of the SPP, which lies beyond the light cone.…”
Section: Introductionmentioning
confidence: 99%
“…While the majority of scientific studies of LSFL on dielectric materials are based on punctual structures [12,15,27,28], i.e., LSFL are generated on a single spot only, for industrial applications, the generation of one-and two-dimensional LSFL is mandatory by scanning the laser. For metals [1][2][3][4]14,29,30] and semiconductors [5,[31][32][33], this has been shown in several publications because of the convenience in generating LSFL on these materials with free charged carriers ( < 0). For dielectric materials, e.g., fused silica, the authors recently have shown the transfer from punctual laser irradiation into the dynamic range, i.e., moving the laser spot over the sample [16].…”
Section: Introductionmentioning
confidence: 94%