2000
DOI: 10.1063/1.1334653
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Coherent optical phonon generation by the electric current in quantum wells

Abstract: This letter addresses the effect of generation of confined LO phonons by drifting electrons in quantum wells. We have derived a general formula for the phonon increment as a function of phonon wave vector, electron drift velocity, and structure parameters. Numerical estimates of the phonon increment and the phonon lifetimes have shown that AlAs/GaAs/AlAs and GaSb/InSb/GaSb quantum well structures can demonstrate the effect of coherent LO phonon generation by the electric current.

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Cited by 15 publications
(14 citation statements)
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“…Solution of Eqs. (21), (26) and (27) requires to provide initial conditions. Considering the initial state as a equilibrium one, the initial condition for populations N q (t) is N (t = 0) = e β 0 ωq − 1 −1 , and those for ĉ q |t = 0 and σ q (t = 0) are zero.…”
Section: Evolution Of the Nonequilibrium Macrostate Of The Magnon Systemmentioning
confidence: 99%
“…Solution of Eqs. (21), (26) and (27) requires to provide initial conditions. Considering the initial state as a equilibrium one, the initial condition for populations N q (t) is N (t = 0) = e β 0 ωq − 1 −1 , and those for ĉ q |t = 0 and σ q (t = 0) are zero.…”
Section: Evolution Of the Nonequilibrium Macrostate Of The Magnon Systemmentioning
confidence: 99%
“…Then the carrier distribution function and its scattering dynamics can be parameterized by a real-space coordinate. But such non-homogeneities are characterized by a space scale which is much longer than the carrier coherence length [13][14][15][16][17][18]. The electron eigen state and energy band profile are obtained by solving the Schrödinger-Poisson equations [15,20,26].…”
Section: Theory Framementioning
confidence: 99%
“…L ¼60 nm is the period length of injection and active region. In order to get the optimized value of γ q , we set the m ¼1 as The value of γ is maximal for the lowest optical mode with m ¼1 [18]. κ el (q, ω LO ) E1is the estimated electron permittivity depending on the LO phonon wave vector q and frequency, we get the simplified value: In our n-doped AlGaAs/GaAs heterostructure, κ 0 ¼12.9, and κ 1 ¼10.8, m* ¼0.067m 0 is the effective mass, where m 0 is the mass of free electron.…”
Section: Theory Framementioning
confidence: 99%
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