2020
DOI: 10.48550/arxiv.2001.02277
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Coherent multi-spin exchange coupling in a quantum-dot spin chain

Haifeng Qiao,
Yadav P. Kandel,
Kuangyin Deng
et al.

Abstract: Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing si… Show more

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Cited by 3 publications
(5 citation statements)
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References 32 publications
(50 reference statements)
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“…As our calculations will show, barrier modulation (e.g., forward biasing an X gate) increases J in silicon dots primarily by softening the potential to reduce the electron separation, enhancing their Coulomb interaction, rather than by simply increasing the tunnel coupling through a fixed barrier, as might be intuited from simple FH models. Our observations in simulations are consistent with recent experiments showing the importance of electron displacement in modulating simultaneous exchange in GaAs [41]; as discussed in section 4, such effects are even stronger in silicon owing to its larger mass.…”
Section: Simultaneous Exchange Operation In Si/sige Tqds From Fcisupporting
confidence: 92%
“…As our calculations will show, barrier modulation (e.g., forward biasing an X gate) increases J in silicon dots primarily by softening the potential to reduce the electron separation, enhancing their Coulomb interaction, rather than by simply increasing the tunnel coupling through a fixed barrier, as might be intuited from simple FH models. Our observations in simulations are consistent with recent experiments showing the importance of electron displacement in modulating simultaneous exchange in GaAs [41]; as discussed in section 4, such effects are even stronger in silicon owing to its larger mass.…”
Section: Simultaneous Exchange Operation In Si/sige Tqds From Fcisupporting
confidence: 92%
“…B z i includes both a large 0.5-T external magnetic field and the smaller hyperfine field. The exchange couplings J 1 , J 2 , and J 3 are controlled by pulsing virtual barrier gate voltages [30]. We model the dependence of the exchange couplings on the virtual barrier gate voltages in the Heitler-London framework [30,31].…”
Section: Device and Hamiltonianmentioning
confidence: 99%
“…The exchange couplings J 1 , J 2 , and J 3 are controlled by pulsing virtual barrier gate voltages [30]. We model the dependence of the exchange couplings on the virtual barrier gate voltages in the Heitler-London framework [30,31]. The model allows us to predict the required barrier gate voltages for a set of desired exchange couplings.…”
Section: Device and Hamiltonianmentioning
confidence: 99%
See 1 more Smart Citation

Floquet-Enhanced Spin Swaps

Qiao,
Kandel,
Van Dyke
et al. 2020
Preprint
Self Cite
“…Achieving this regime can be challenging and often leads to a nonlinear dependence of the exchange on the external gate voltages. 54,55 As a result, it may be difficult in practice to realize the ideally shaped Gaussian pulses considered in the previous section. Fortunately, the adiabatic nature of the control scheme renders spin-CTAP largely insensitive to these effects.…”
Section: Imperfections In Ac Exchange Drivingmentioning
confidence: 99%