Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Zhao, Ming; Zargaleh, Soroush Abbasi; Bardeleben, H. J. von; Fröch, Johannes E.; Nonahal, Milad; Cai, Haiwen; Yang, Xinge; Yang, Jianqun; Li, Xingji; Aharonovich, Igor; Gao, Weibo

doi:10.1021/acs.nanolett.0c02342

Cited by 52 publications

(47 citation statements)

References 43 publications

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“…Promising experimental results on NV center generation and coherent manipulation [132], as well as theoretical proposals for their spin-photon interfaces have been demonstrated in SiC [127]. Integration of these telecommunications range emitting centers into nanophotonic devices, as well as an increase of their spin-coherence, is a work in progress.…”

Section: Advances In Science and Technology To Meet Challengesmentioning

confidence: 99%

2022 Roadmap on integrated quantum photonics

et al. 2022

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Integrated photonics will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying optical quantum technologies can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration have enabled table-top experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. These advances have enabled integrated quantum photonic technologies combining up to 650 optical and electrical components onto a single chip that are capable of programmable quantum information processing, chip-to-chip networking, hybrid quantum system integration, and high-speed communications. In this roadmap article, we highlight the status, current and future challenges, and emerging technologies in several key research areas in integrated quantum photonics, including photonic platforms, quantum and classical light sources, quantum frequency conversion, integrated detectors, and applications in computing, communications, and sensing. With advances in materials, photonic design architectures, fabrication and integration processes, packaging, and testing and benchmarking, in the next decade we can expect a transition from single- and few-function prototypes to large-scale integration of multi-functional and reconfigurable devices that will have a transformative impact on quantum information science and engineering.

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Section: Advances In Science and Technology To Meet Challengesmentioning

confidence: 99%

2022 Roadmap on integrated quantum photonics

et al. 2022

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“…It can further realize the directly magnetic eld image of the sample using a CMOS camera detector 8 . The 4H-SiC micrometer particle with V Si defects 41 and other types of spin qubit including divacancy 15,16,42 , NV center [24][25][26] and even transition metal ions 43 in 4H, 6H…”

Section: Discussionmentioning

confidence: 99%

“…SiC is a widely used semiconductor due to its unique properties, such as mature inch-scale growth and micro-nano fabrication [15][16][17] . In recent years, several spin qubits and bright single-photon-emitters in SiC attracted great attentions in the quantum community [15][16][17][18][19][20][21][22][23][24][25][26] .…”

Section: Introductionmentioning

confidence: 99%

Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide

Wang

Liu

et al. 2022

Preprint

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Pressure is a significant parameter to investigate the properties of matter. The phenomenon of pressure-induced magnetic phase transition has attracted great interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cell. However, detection of the local sample magnetic properties is a great challenge due to the small sample chamber volume. Recently, in situ pressure-induced phase transition has been detected using optically detected magnetic resonance (ODMR) method of the nitrogen vacancies (NV) centers in diamond. However, the NV centers with four orientation axes and temperature-dependent zero-field-splitting present some difficulty to interpret the observed ODMR spectra. Here, we investigate and characterize the optical and spin properties of the implanted silicon vacancy defects in 4H-SiC, which is single-axis and temperature-independent zero-field-splitting. Using this technique, we observe the magnetic phase transition of a magnetic Nd2Fe14B sample at about 7 GPa. Finally, the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.66 is mapped and refined. These experiments pave the way for the silicon vacancy-based quantum sensor being used in situ magnetic detection at high pressures.

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“…Several color centers observed in SiC have also been identified and studied as single photon emitters (V Si , [ 165 ] V Si V C , [ 166 ] C Si V C , [ 151 ] V Si N C , [ 167 ] and Vanadium [ 168 ] ), and as spin qubits (V Si , [ 169 ] V Si V C , [ 146 ] Cr, [ 170 ] Vanadium, [ 168 ] and V Si N C [ 171,172 ] ) in bulk SiC.…”

Section: Fluorescence In Sic Npsmentioning

confidence: 99%

Fluorescent Silicon Carbide Nanoparticles

Vries

Sato

Ohshima

et al. 2021

Advanced Optical Materials

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Silicon carbide (SiC) is an indirect wide band gap semiconductor that is utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet to the near‐infrared spectral ranges, and their sizes can be tuned from one to hundreds of nanometers. Yet, fluorescent SiC NPs have received far less attention by the scientific community. This review summarizes the state‐of‐the‐art in fluorescent SiC NPs. Nanoparticle fabrication methods, characterization techniques, nanoparticle surface chemistry, and SiC NPs fluorescence properties are assessed in detail. Atomic defects and impurities in the SiC crystal lattice (so‐called color centers), surface‐induced fluorescence, quantum confinement, and band‐edge fluorescence are identified as the main sources of fluorescence in SiC NPs. While many color centers are reported in bulk SiC, only few are identified in SiC NPs and interface‐related defects remain poorly understood, creating enormous potential for scientific discovery. Finally, an overview of demonstrated and emerging potential applications of SiC NPs in the areas of bioimaging and quantum sensing is provided.

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Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

Cited by 52 publications

References 43 publications

2022 Roadmap on integrated quantum photonics

2022 Roadmap on integrated quantum photonics

Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide

Fluorescent Silicon Carbide Nanoparticles

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