Coherent InAs/CdSe and InAs/ZnTe/CdSe heterovalent interfaces: Electronic and chemical structure

Sedova, I. V.; Лебедев, М. В.; Klimko, G. V.; Sorokin, Sergey; Соловьев, В. А.; Cherkashinin, Gennady; Nappini, Silvia; Magnano, Elena; Дроздов, М. Н.; Kop’ev, P. S.; Иванов, С. В.

doi:10.1016/j.apsusc.2018.04.113

Cited by 6 publications

(3 citation statements)

References 44 publications

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“…The structural and electronic parameters of CdSe and InAs used for the calculations were taken from references. 24 − 26 The conductivity measurements did not show features of the electron ballistic transport in the NW like, for example, the presence of steps on the dependence of the drain current on the backgate voltage. Thus, the electron transport is assumed to have a diffusive character and the conductivity is determined by the product of electron density in the NW core and shell ( n core and n shell ) and the mobility.…”

Section: Resultsmentioning

confidence: 90%

“…In order to characterize the origin of the different measured conductivity regions, the electron density in the structure was calculated by solving Schrödinger and Poisson equations for the envelope functions using the effective mass approximation , and taking into account the In doping in the shell revealed by the APT analysis. The structural and electronic parameters of CdSe and InAs used for the calculations were taken from references. − The conductivity measurements did not show features of the electron ballistic transport in the NW like, for example, the presence of steps on the dependence of the drain current on the backgate voltage. Thus, the electron transport is assumed to have a diffusive character and the conductivity is determined by the product of electron density in the NW core and shell ( n core and n shell ) and the mobility.…”

Section: Resultsmentioning

confidence: 99%

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Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

Kaladzhian,

von den Driesch,

Demarina

et al. 2024

ACS Appl. Mater. Interfaces

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Core-only InAs nanowires (NWs) remain of continuing interest for application in modern optical and electrical devices. In this paper, we utilize the II−VI semiconductor CdSe as a shell for III−V InAs NWs to protect the electron transport channel in the InAs core from surface effects. This unique material configuration offers both a small lattice mismatch between InAs and CdSe and a pronounced electronic confinement in the core with type-I band alignment at the interface between both materials. Under optimized growth conditions, a smooth interface between the core and shell is obtained. Atom probe tomography (APT) measurements confirm substantial diffusion of In into the shell, forming a remote n-type doping of CdSe. Moreover, field-effect transistors (FETs) are fabricated, and the electron transport characteristics in these devices is investigated. Finally, band structure simulations are performed and confirm the presence of an electron transport channel in the InAs core that, at higher gate voltages, extends into the CdSe shell region. These results provide a promising basis toward the application of hybrid III−V/II−VI core/shell nanowires in modern electronics.

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Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Growth and Electrical Characterization of Hybrid Core/Shell InAs/CdSe Nanowires

Kaladzhian,

von den Driesch,

Demarina

et al. 2024

ACS Appl. Mater. Interfaces

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“…Heterovalent semiconductor structures have been a promising material for fabrication of a variety of opto-and nanoelectronic devices owing to the possibility of complementary combination of properties (structural, electrical, magnetic, and optical) inherent to compounds of various chemical groups [11]. Among them, two or more single materials are coupled to form heterostructure by van der Waals (vdW) force to improve the overall performances, such as NiS 2 /MoSe 2 [12], BiVO 4 /WO 3 [13], GaAs/InSe [14], GaSe/HfS 2 [15], GaN/BP [16], XSSe/SiC [17], MoSe 2 /blue phosphorene [18], BlueP/Ge(Si)C [19].…”

Section: Introductionmentioning

confidence: 99%

The structural, electronic and optical properties of ZnTe/CdSe/GaSb heterotrilayer: first-principles study

Zhou

2021

J. Phys. D: Appl. Phys.

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Herein, we carry out a density functional theory based investigation to understand the structural and electrical properties, such as band structure, partial density of states, electron density difference and optical properties of the ZnTe/CdSe/GaSb heterotrilayer. The results show that the stacking order and interlayer distance will affect the stability of the structure. The stacking order of monolayer ZnTe, CdSe and GaSb is the most stable (C structure), with the direct bandgap is only 0.210 eV. The heterostructure has a strong binding force which may be due to the local atomic orbital hybridization. In addition, the ZnTe/CdSe/GaSb heterotrilayer has excellent optical properties in ultraviolet, visible and infrared regions, and has stronger absorption ability for visible light compared to each monolayer. Finally, compared with the ZnTe/CdSe, ZnTe /GaSb and CdSe/GaSb, heterobilayers show that the heterotrilayer has smaller direct bandgap, and has better photoelectric properties. The ZnTe/CdSe/GaSb heterotrilayer has a stable structure and excellent photoelectric performance, which has good potential and wide application prospects in nano electronic devices, photoelectric devices, visible light absorption, photocatalysis, infrared light conversion and detection.

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