We investigate the properties of complex mesoscopic superconducting-normal hybrid devices, Andreev Interferometers in the case where the current is probed through a superconducting tunneling contact whereas the proximity effect is generated by a transparent SN interface. We show within the quasiclassical Green'sfunctions technique, how the fundamental SNIS element of such structures can be mapped onto an effective SЈIS junction, where SЈ is the proximized material with an effective energy gap E g Ͻ⌬. The conductance through such a sample at Tϭ0 vanishes if VϽ⌬ϩE g , whereas at TϾ0 the conductance shows a peak at V ϭ⌬ϪE g . We propose the Andreev interferometer, where E g can be tuned by an external phase and displays maxima at 0 mod 2 and minima at mod 2. This leads to peculiar current-phase relations, which depart from a zero-phase maximum or minimum depending on the bias voltage and can even show intermediate extreme at VϷ⌬. We propose an experiment to verify our predictions and show how our results are consistent with recent, unexplained experimental results.The proximity effect, although already known for many decades ͑see, e.g., Ref. 1͒, has recently attracted renewed scientific interest in the context of mesoscopic normalsuperconducting hybrid structures, which are now experimentally acessible due to progress in nanofabrication and measurement support technology.2-4 Departing from the properties of single junction and the nonmonotonic diffusion conductance of SN wires, the interest turned to the possibility of tuning the conductance by an external phase or a loop in the normal part. On the other hand, if probed through tunneling contacts 5 the conductance is controlled by the DOS and the induced minigap, 6,7 which can also be controlled by a phase 8 and hence opens another channel for phase controlled conductance of a different sign.9,10 If a system contains more than one superconducting terminal, a supercurrent can flow. The situation becomes more difficult and, in particular, time dependent, if nonequilibrium is created by applying an external voltage parallel to the junction. This latter situation is substantially simplified, if one of the contacts is separated from the rest of the structure by a tunneling barrier. In that case, the voltage and phase drop is concentrated at the barrier and the problem is essentially split into two parts: The time dependence of the phase at the contact and the proximity effect, which determines the superconducting properties at the normal side of the contact, within the normal metal. In that case, the physics should be basically identical to the case of an SЈIS junction, where the properties of the ''superconductor'' SЈ are entirely controlled by the proximity effect, i.e., we expect a gap of size E g Ͻ⌬ where, if the junction is long, dӷ 0 E g ϰE Th ϭD/d 2 , the Thouless energy. Hence we will expect the known 11