Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

Ma, Hanlu; Wang, Zhongqiang; Zhang, Lei; Zhao, Xiaoning; Han, Manshu; Ma, Jiangang; Liu, Yichun

doi:10.1088/1674-1056/25/12/127303

Cited by 24 publications

(10 citation statements)

References 31 publications

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“…However, variation in critical switching parameters and power consumption remain challenges in single layer ZnO films for potential TRRAM applications. [3,10,11] Multilayering is one effective way to improve the resistive switching behavior. [12][13][14][15][16][17] In this paper, the single layer TR-RAM device (SL-TRRAM) with ITO/ZnO/ITO structure and effects of inserting layer thickness of HfO x film on resistance switching properties of bilayer TRRAM device (BL-TRRAM) were investigated.…”

Section: Introductionmentioning

confidence: 99%

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

Wang

Zhang

et al. 2018

Chinese Phys. B

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The impacts of HfO x inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory (TRRAM) device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfO x /ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfO x inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfO x /ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state (LRS) and Schottky emission in the high resistive state (HRS), while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.

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Section: Introductionmentioning

confidence: 99%

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

Wang

Zhang

et al. 2018

Chinese Phys. B

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“…To date, reliable BRS and URS behaviors have been observed in a wide variety of materials, including binary metal oxides HfO 2 , TaO x , ZnO, WO x , NiO, etc . Beneficial to high density data storage, multilevel switchings have also been demonstrated in both BRS and URS devices, as well as devices with atypical coexistent BRS and URS . Furthermore, in order to catch the speed of the microprocessor working in gigahertz lockstep, sub‐nanosecond operation speed is required for next‐generation memories, which has been obtained in BRS devices with binary memory states but was not achieved in any multilevel RRAMs.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

Chen

Huang

Zhao

et al. 2018

Adv Elect Materials

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better uniformity. [20] While for URS mode, owing to the single polarity operation, it allows a diode as the selector in crossbar arrays to settle the sneak-path issue. [21] And this passive crossbar array with one diode-one resistor (1D1R) structure offers advantages in achieving the highest integration density of 4F 2 [22] as well as enables simplified peripheral control elements to support large-scale integrated circuits. [23] To date, reliable BRS and URS behaviors have been observed in a wide variety of materials, including binary metal oxides HfO 2 , TaO x , ZnO, WO x , NiO, etc. [24][25][26][27][28][29] Beneficial to high density data storage, multilevel switchings have also been demonstrated in both BRS [24,25,30,31] and URS [27,32] devices, as well as devices with atypical coexistent BRS and URS. [33,34] Furthermore, in order to catch the speed of the microprocessor working in gigahertz lockstep, sub-nanosecond operation speed is required for nextgeneration memories, which has been obtained in BRS devices with binary memory states but was not achieved in any multilevel RRAMs. For example, operation speeds as fast as 300 and 100 ps were achieved in HfO x and Pt-SiO 2 based BRS RRAMs, respectively, [35][36][37] while the reliable multilevel control in BRS RRAMs was only obtained with operation speed of dozens or even hundreds of nanoseconds. [24,27,31,32] By comparison, no sub-nanosecond multilevel switchings were reported in URS RRAM. Therefore, it will be interesting to study the sub-nanosecond operating ability in a URS device, in which a typical high off/on resistance ratio may be able to host multilevel resistance states with ultrafast operation speed.As an important magnetic insulator, yttrium iron garnet Y 3 Fe 5 O 12 (YIG) has been used in microwave, acoustic, optical, and magneto-optical applications, as well as spintronic devices owing to its low damping constant and insulating ferromagnetic nature. [38][39][40] Besides the well-known magneto-optical memory applications for YIG, early in 1970, Bullock et al. found a repeatable URS behavior in Si-doped YIG crystal. [41] This discovery demonstrates the possible application of YIG as an RRAM device, but no further resistive switching investigations were carried out since then. The high performance of the Au/YIG/n-Si RRAM cells was herein reported with sub-nanosecond switching speed, high off/on resistance ratio, well endurance, and reliable retention at both room temperature and 85 °C. Multi resistance states were achieved during the DC voltage sweep as well as ultrafast pulse operation. Furthermore, YIG-based RRAM is fabricated on silicon substrate, further illustrating its promising potential for commercial application in memories.Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next-generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio (≈10 4 ) are obtained in yttrium iron garnet Y 3 Fe 5 O 12 (YIG)-based resistive memory on ...

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“…Resistive switching (RS) has aroused lots of interest for its potential applications in the resistive random access memory devices. [1] The resistive switching phenomenon has been widely observed in the structures based on transition metal oxides, such as TiN/ZnO/Pt, [2] Cu/HfO 2 /Pt, [3] TiN/HfO x /ITO, [4] Pt/TiO 2 /Pt, [5] Ag/ZnO/Pt, [6] Ti/CeO 2 /Pt, [7] Pt/Mn 3 O 4 /Nb:SrTiO 3 , [8] Cu/SiO x /Al, [9] and Ti/ZrO 2 /Pt. [10] The main stream of RS materials is metal oxide.…”

Section: Introductionmentioning

confidence: 99%

“…[1] The resistive switching phenomenon has been widely observed in the structures based on transition metal oxides, such as TiN/ZnO/Pt, [2] Cu/HfO 2 /Pt, [3] TiN/HfO x /ITO, [4] Pt/TiO 2 /Pt, [5] Ag/ZnO/Pt, [6] Ti/CeO 2 /Pt, [7] Pt/Mn 3 O 4 /Nb:SrTiO 3 , [8] Cu/SiO x /Al, [9] and Ti/ZrO 2 /Pt. [10] The main stream of RS materials is metal oxide. RS mechanisms involve the conductive filaments and interface effects between oxide matrix and electrodes.…”

Section: Introductionmentioning

confidence: 99%

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

et al. 2018

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ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.

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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

Cited by 24 publications

References 31 publications

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

Cited by 24 publications

References 31 publications

High uniformity and forming-free ZnO-based transparent RRAM with HfO x inserting layer

High uniformity and forming-free ZnO-based transparent RRAM with HfO x inserting layer

Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures

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Product

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High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer

High uniformity and forming-free ZnO-based transparent RRAM with HfO_x inserting layer