Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Sun, Huajun; Wang, Meixiao; Zhu, Fengfeng; Wang, Guan-Yong; Ma, Hai-Yang; Xu, Zhu-An; Liao, Qinhong; Lu, Yunhao; Gao, Chunlei; Li, Yaoyi; Liu, Canhua; Qian, Dong; Guan, Dandan; Jia, Jin‐Feng

doi:10.1021/acs.nanolett.7b00365

Cited by 69 publications

(62 citation statements)

References 40 publications

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“…Recent works related to Bi thin films mainly focus on two different orientations of β-Bi, namely Bi (111) and Bi (110), exhibiting different crystal structures and properties. 22,25,31,34 In this work, we prepare both (111) and (110)-oriented thin films by precisely controlling the processing temperature at 100 C and RT, respectively. In general, Bi (111) surface exhibits a honeycomb structure in the top view as shown in Figure 2A.…”

Section: Resultsmentioning

confidence: 99%

“…Up to now, 2D Bi films have been realized by various techniques from both top‐down and bottom‐up ways, such as liquid‐based exfoliation, molecular beam epitaxy, and acid intercalated exfoliation . Meanwhile, the epitaxially grown Bi thin films can be directly dry transferred to a secondary substrate, which could maintain the structural, optical, and electrical properties quite similar to the as‐grown Bi films .…”

Section: Introductionmentioning

confidence: 99%

“…Meanwhile, the epitaxially grown Bi thin films can be directly dry transferred to a secondary substrate, which could maintain the structural, optical, and electrical properties quite similar to the as‐grown Bi films . It is worth noting that the orientation of ultrathin Bi films significantly determines their properties . More recently, the direct growth of Bi thin films with different orientations has been demonstrated .…”

Section: Introductionmentioning

confidence: 99%

“…26 Besides, the giant nonlinear optical properties and small band gap also make 2D Bi favorable for the applications of broadband photodetectors, nonlinear optical switching, phase modulator, and so on. 27,28 Up to now, 2D Bi films have been realized by various techniques from both top-down and bottom-up ways, such as liquid-based exfoliation, 29 molecular beam epitaxy, 30,31 and acid intercalated exfoliation. 32 Meanwhile, the epitaxially grown Bi thin films can be directly dry transferred to a secondary substrate, which could maintain the structural, optical, and electrical properties quite similar to the asgrown Bi films.…”

Section: Introductionmentioning

confidence: 99%

“…33 It is worth noting that the orientation of ultrathin Bi films significantly determines their properties. 25,31,34 More recently, the direct growth of Bi thin films with different orientations has been demonstrated. 35 However, many properties of these films including achievable scale of the samples, morphology, details of crystal structure, and electrical properties are still unknown.…”

Section: Introductionmentioning

confidence: 99%

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Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Yang

Lyu

et al. 2019

InfoMat

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Ever since discovery of graphene, two‐dimensional (2D) materials become a new tool box for information technology. Among the 2D family, ultrathin bismuth (Bi) has attracted a great deal of attention in recent years due to its unique topological insulating properties and large magnetoresistance. However, the scalable synthesis of layered Bi ultrathin films is rarely been reported, which would greatly restrict further fundamental investigation and practical device development. Here, we demonstrate the direct growth of homogeneous and centimeter‐scale layered Bi films by pulsed laser deposition (PLD) technique. The as‐grown Bi film exhibits high‐purity phase and good crystallinity. In addition, both (111) and (110)‐oriented Bi films can be synthesized by precisely controlling the processing temperature. The characterization of optical properties shows a thickness dependent band gaps (0.075‐0.2 eV). Moreover, Bi thin‐film‐based field‐effect transistors have been demonstrated, exhibiting a large carrier mobility of 220 cm2 V−1 s−1. Our work suggests that the PLD‐grown Bi films would hold the potential to develop spintronic applications, electronic and optoelectronic devices used for information science and technology.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Yang

Lyu

et al. 2019

InfoMat

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Synthesis of Large‐Area Atomically Thin BiOI Crystals with Highly Sensitive and Controllable Photodetection

Zeng

Feng

et al. 2019

Adv Funct Materials

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Compared to the most studied 2D elements and binary compounds, ternary layered compounds with more adjustable physical and chemical properties have exhibited potential applications in electronic and optoelectronic devices. Here, 2D ternary layered BiOI crystals are synthesized first with a domain size up to 100 µm via space-confined chemical vapor deposition. The photodetectors based on the as-grown BiOI nanosheets demonstrate high sensitivity to 473 nm light. The I on /I off ratio and detectivity of BiOI photodetectors can reach up to 1 × 10 5 and 8.2 × 10 11 Jones at 473 nm, respectively. Particularly, the contact and dark current of the photodetectors can be controlled by 254 nm ultraviolet light irradiation due to the introduction of oxygen vacancies. The facile synthesis of large-area atomically thin BiOI and its controllable performance by ultraviolet light irradiation suggest that 2D BiOI crystal is a promising material for fundamental investigations and optoelectronic applications.

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2D V‐V Binary Materials: Status and Challenges

et al. 2019

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201902352. 2D phosphorene, arsenene, antimonene, and bismuthene, as a fast-growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group-VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V-V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V-V binary materials is given.

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Coexistence of Topological Edge State and Superconductivity in Bismuth Ultrathin Film

Cited by 69 publications

References 40 publications

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Centimeter‐scale growth of two‐dimensional layered high‐mobility bismuth films by pulsed laser deposition

Synthesis of Large‐Area Atomically Thin BiOI Crystals with Highly Sensitive and Controllable Photodetection

2D V‐V Binary Materials: Status and Challenges

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