Coexistence of memory and threshold resistive switching identified by combinatorial screening in niobium-tantalum system

Zrinski, Ivana; Minenkov, Alexey; Cancellieri, Claudia; Mardare, Cezarina Cela; Groiß, Heiko; Hassel, Achim Walter; Mardare, Andrei Ionut

doi:10.1016/j.apsusc.2022.155917

Cited by 4 publications

(3 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Devices with different morphologies exhibited different switching characteristics, such as digital and analogue switching. In addition to single metals, Zrinski et al also used the anodic oxidation to oxidize composite metals, such as Nb-Ta [104], Hf-Ta [105,106], and Nb-Hf [107], and some satisfactory results were obtained.…”

Section: Memristors Based On Films Of Other Metal Oxidesmentioning

confidence: 99%

Electrochemical anodic oxidation assisted fabrication of memristors

Hua,

Jin,

Guo

2024

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

Owing to the advantages of simple structure, low power consumption and high-density integration, memristors or memristive devices are attracting increasing attention in the fields of next generation nonvolatile memories, neuromorphic computation and data encryption, etc. However, the deposition of memristive films often requires expensive equipment and strict vacuum conditions, the process consumes high energy, and it is also very time–consuming. In contrast, electrochemical anodizing can produce metal oxide films quickly (e.g. in 10 s) under ambient conditions. By means of the anodizing technique, oxide films, oxide nanotubes, nanowires and nanodots can be fabricated to prepare memristors. Through adjusting oxidation parameters such as voltage, current and time, oxide film thickness, nanostructures, defect concentrations, etc., can be varied to regulate device performances. Thus memristors fabricated by the anodic oxidation technique can achieve high device consistency, low variation, and ultra–high yield rate. This article provides a comprehensive review of the research progress in the field of anodic oxidation assisted fabrication of memristors. Firstly, the principle of anodic oxidation is introduced; then different types of memristors produced by the anodic oxidation are presented; finally, features and challenges of the anodic oxidation for memristor production are elaborated.

show abstract

Section: Memristors Based On Films Of Other Metal Oxidesmentioning

confidence: 99%

Electrochemical anodic oxidation assisted fabrication of memristors

Hua,

Jin,

Guo

2024

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

show abstract

“…Additionally, volatile memristors can be classified by their switching behaviour as digital (threshold) when they show an abrupt switching complying with an on/off process and analogue if they show a gradual transition through multiple resistive states [ 2 ]. The switching mechanism of digital memristors is usually filamentary, while analogue ones may have either filamentary, with parallel filaments defining the resistive levels [ 4 , 5 ], or nonfilamentary mechanisms, based on an interfacial switching mechanism [ 6 ]. With its unique volatile or non-volatile resistive switching behaviour, this circuit element (the fourth most common apart from the inductor, capacitor, and resistor) can be used in a variety of modern applications such as memory devices [ 7 , 8 , 9 , 10 , 11 , 12 , 13 ], sensing [ 14 , 15 , 16 ], image processing [ 17 , 18 ], and neuromorphic computing [ 19 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

Knapic,

Minenkov,

Atanasova

et al. 2024

Nanomaterials

Self Cite

View full text Add to dashboard Cite

A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.% Ti was anodically oxidised, the mixed oxide being the active layer in MIM-type structures completed by Pt discreet top electrode patterning. By studying I–U sweeps, memristors with self-rectifying and volatile behaviour were identified. Moreover, all the analysed memristors demonstrated multilevel properties. The best-performing memristors showed HRS/LRS (high resistive state/low resistive state) ratios between 4 and 6 × 105 and very good retention up to 106 successive readings. The anodic memristors grown along the compositional spread showed very good endurance up to 106 switching cycles, excluding those grown from alloys containing between 31 and 39 at.% Ti, which withstood only 10 switching cycles. Taking into consideration all the parameters studied, the Nb-46 at.% Ti composition was screened as the parent metal alloy composition, leading to the best-performing anodic memristor in this alloy system. The results obtained suggest that memristive behaviour is based on an interfacial non-filamentary type of resistive switching, which is consistent with the performed cross-sectional TEM structural and chemical characterisation.

show abstract

“…Compliance current (CC) modulation can significantly influence the RS properties. Recent investigations have revealed the coexistence of two different RS modes by tuning the current limit [31][32][33][34][35][36][37] in the same device. However, the reliability of these dual mode switching devices hinders their practical synaptic and highdensity storage applications because of the crosstalk effect.…”

Section: Introductionmentioning

confidence: 99%

Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications

Pal

Singh

Wang

2023

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

A highly reliable and versatile resistive memory device that demonstrates threshold and non-volatile (NVM) switching behaviour depending on the compliance current (CC) modulation was utilised by doping a semiconducting (Si) material into a high-k (HfOx) film with highly linear synaptic behaviour. The device shifted towards volatile switching at a CC less than 1 µA and exhibited NVM behaviour at a CC limit above 10 µA. A 3-bit/cell data storage capability on RESET voltage modulation was implemented for high-density memory application. The device exhibited excellent programming linearity of potentiation/depression responses up to 10000 pulses compatible with fast pulse (100 ns) with good ION/IOFF ratio (>10^3), stable data retention capability (10^5 s) at 85°C and high WRITE endurance (~10^7 cycles) with a pulse width of 200 ns. The neuromorphic applications were successfully emulated through neural network simulations using the experimentally calibrated data of the Si-doped HfOx resistive cross-point devices. Simulation results revealed a low nonlinearity of 0.03 with 98.08% pattern recognition accuracy. The estimated results revealed the potential of the device as a low-power selector and high-density NVM storage in large-scale crossbar array in future neuromorphic computing applications.

show abstract

Coexistence of memory and threshold resistive switching identified by combinatorial screening in niobium-tantalum system

Cited by 4 publications

References 39 publications

Electrochemical anodic oxidation assisted fabrication of memristors

Electrochemical anodic oxidation assisted fabrication of memristors

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications

Contact Info

Product

Resources

About