Coefficient for Self-Diffusion Determined from the Rate of Precipitation of Cu in Ge

Diffusion Mechanisms and Point Defects in Silicon and Germanium

“…Thus case b) in Section 4.2.2 was thought to apply. Penning [17] employed the Frank-Turnbull mechanism (equation (4.23)) to calculate the self-diffusion coefficients (monovacancy mechanism) in Ge using Tweet's Cu precipitation data [172] and found that the results agreed quite well with the self-diffusion coefficients measured with radioactive tracers at higher temperatures.…”

“…From the observed signs and magnitudes of such changes conclusions as to the nature and properties of the self-diffusion mechanism can be drawn (Section 2.3.4). c) As we shall outline presently, for one particular self-diffusion mechanism, namely that via monovacancies, the diffusion coefficient may be determined in an indirect way a t rather low temperatures [17]. By investigating whether the tracer measurements of self-diffusion a t high temperatures and the indirect determinations a t low temperatures are compatible with each other it can be decided whether the high temperature mechanism is a vacancy mechanism or not, and, if not, whether a change in the mechanism of self-diffusion as a func-tion of temperature is to be expected.…”

“…The factor 112 is the correlation factor of self-diffusion via the monovacancy mechanism in the diamond structure 11361, which had been neglected by previous authors. Otherwise (4.23) is identical with the expression given in [17].…”

“…Penning [17] was the first to point out such possibility. He analysed Tweet's results [172] on Cu precipitation in Ge, using the solubility of substitutional Cu as given by Woodbury and Tyler [l02].…”

Investigation of point defects in silicon and germanium by non-irradiation techniques

“…The application of Penning's method (20) for determining D! ; to Tweet's experimental data(,,) leads in the temperature range between 700 "C and about 400 "C to a monovacancy diffusion coefficient in germanium that joins well to the tracer measurements at high temperatures.…”