A K-band slot antenna element with integrated GaN (gallium nitride) power amplifier (PA) is presented. It has been optimized through a circuit-EM co-design methodology to directly match the transistor drain output to its optimal load impedance (Zopt = 17 + j46Ω) while accounting for the over-the-air coupling effects in the vicinity of the transition between the PA and antenna. This obviates the need for using a potentially lossy and bandwidth-limiting output impedance matching network. The measured PA-integrated antenna gain of 15 dBi with a 40% total efficiency at 28 dBm output power agrees well with the theoretically achievable performance targets. The proposed element is compact (0.6 × 0.5 × 0.3 λ 3), and thus well-suited to meet the high-performance demands of future emerging beamforming active antenna array applications. Index Terms-millimeter-wave antennas, gallium nitride (GaN), active integrated antennas, power amplifiers, antenna-circuit co-design, K-band, antenna array element.