2017
DOI: 10.1063/1.4975034
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Cobalt-related defects in silicon

Abstract: Transition metals from the 3d series are unavoidable and unwanted contaminants in Si-based devices. Cobalt is one of the most poorly understood impurities with incomplete experimental information and few theoretical studies. In this contribution, the properties of interstitial cobalt (Coi) in Si and its interactions with the vacancy, self-interstitial, hydrogen, and substitutional boron are calculated using the first-principles tools. The stable configurations, gap levels, and binding energies are predicted. T… Show more

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Cited by 7 publications
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“…Additionally, a variety of different Co defects are known . As mentioned above, the extent of LeTID degradation clearly correlates with the temperature ramps of the firing process .…”
Section: Multicrystalline Siliconmentioning
confidence: 91%
“…Additionally, a variety of different Co defects are known . As mentioned above, the extent of LeTID degradation clearly correlates with the temperature ramps of the firing process .…”
Section: Multicrystalline Siliconmentioning
confidence: 91%