Cobalt out‐diffusion and carbon phase composition at the WC‐10%Co/diamond film interface investigated by XPS, SEM, Raman and SIMS

Hojman, E.; Akhvlediani, R.; Alagem, Eli; Hoffman, A.

doi:10.1002/pssa.201200037

Cited by 14 publications

(3 citation statements)

References 26 publications

(25 reference statements)

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“…In our previous studies, we found that a ∼1.5 μm Cr–N thickness interlayer enhanced the adhesion of diamond films deposited on WC–Co substrates . This was due to a number of effects: (i) prevention of diffusion of Co from the substrate into the diamond film, which hinders the catalytic activity of Co; (ii) formation of a few nm thick Cr–C interface between the interlayer and the diamond film, which enhances chemical adhesion of the films to the interlayer; and (iii) a “net‐like” microstructure of the Cr–N interlayer, which provides a mechanical adhesion by “anchoring effect.”…”

Section: Introductionmentioning

confidence: 92%

The influence of deposition temperature on the adhesion of diamond films deposited on WC–Co substrates using a Cr–N interlayer

Fischer

Chandran

Akhvlediani

et al. 2015

Physica Status Solidi (a)

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The possibility of combining the hardness of diamond with the toughness of WC-Co has attracted a great attention toward the deposition of diamond films on WC-Co substrates due to their potential industrial applications. However, the performance of diamond coated WC-Co machining tools is limited by the coating-substrate adhesion strength. In this work, we report on the effect of deposition temperature on the adhesion of diamond films deposited on WC-10%Co substrates. Prior to diamond deposition, an interlayer of 1.5 mm thick Cr-N was deposited on the WC-Co substrates to minimize cobalt diffusion. Diamond films were deposited using hot filament chemical vapor deposition technique at different temperatures (500-750 8C). Phase purity and residual stress of diamond films were investigated by Raman spectroscopy. Adhesion was determined using Vickers hardness test with discrete loads of 20 kgf by examining the failure occurred at the weaker interface, which allows an easy propagation of indentation induced lateral cracks. The weaker interface was found at the diamond/Cr-N interlayer. Improved adhesion was found for diamond films deposited at 650 8C, compared to the films deposited at other temperatures. A comprehensive analysis about the optimum deposition temperature that leads to better adhesion is discussed.

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Section: Introductionmentioning

confidence: 92%

The influence of deposition temperature on the adhesion of diamond films deposited on WC–Co substrates using a Cr–N interlayer

Fischer

Chandran

Akhvlediani

et al. 2015

Physica Status Solidi (a)

Self Cite

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“…This is because Co in WC-Co interlayer evaporated under high temperature and low pressure condition. At high deposition temperatures, ball-shaped cobalt particles will form on the surface of the sample and can move during diamond deposition [35] . Also, when diamond film was depositing, a small fraction of Co on the surface of interlayer diffused to the surface of diamond through defects such as grain boundaries and cracks.…”

Section: Near Surfacementioning

confidence: 99%

Microstructure evolution of thermal spray WC–Co interlayer during hot filament chemical vapor deposition of diamond thin films

Yang

Wei

et al. 2015

Journal of Alloys and Compounds

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“…The specific structure of the Co-rich particles on the plasma nitrided surface suggests that N in the Co 4 N layer diffuses outward during HFCVD. These released N atoms react with carbon atoms absorbed on the surface; thus, it probably prevents catalytic graphitization of γ-Co [41,43]. This promotes the formation of diamond nuclei at the interface.…”

Section: Effect Of the Conversion Layer On Hfcvdmentioning

confidence: 99%

Effect of Low-Pressure Plasma Nitriding with Hollow Cathode Discharge on the Surface Microstructure of WC-Co Cermet

et al. 2021

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WC-Co cermet was plasma-nitrided with the assistance of a hollow cathode ion source at 400 °C under a vacuum of 3–8 Pa. Hot film chemical vapor deposition (HFCVD) of a diamond coating was carried out on the nitrided specimen, without chemical etching. Scanning electronic microscopy, electron probing microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to characterize the surface microstructure of the nitride specimens and the coatings. A thin surface conversion layer with a specific structure was formed, in which the primary Co binder was transformed into Co-rich particles. The Co-rich particles consisted of a γ-Co core and a Co4N outer layer. This specific surface conversion layer significantly suppresses the out-diffusion and catalytic graphitization of Co during HFCVD. The existent phase, morphology, and density distribution of Co compounds can be tuned by varying the nitriding parameters, such as gas media, ionization ratio, bombardment energy flux, and nitriding duration.

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Cobalt out‐diffusion and carbon phase composition at the WC‐10%Co/diamond film interface investigated by XPS, SEM, Raman and SIMS

Cited by 14 publications

References 26 publications

The influence of deposition temperature on the adhesion of diamond films deposited on WC–Co substrates using a Cr–N interlayer

The influence of deposition temperature on the adhesion of diamond films deposited on WC–Co substrates using a Cr–N interlayer

Microstructure evolution of thermal spray WC–Co interlayer during hot filament chemical vapor deposition of diamond thin films

Effect of Low-Pressure Plasma Nitriding with Hollow Cathode Discharge on the Surface Microstructure of WC-Co Cermet

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