Abstract:In this research, the graphene was grown directly on the Si(100) surface at 600 °C temperature using an anode layer ion source. The sacrificial catalytic cobalt interlayer assisted hydrocarbon ion beam synthesis was applied. Overall, two synthesis process modifications with a single-step graphene growth at elevated temperature and two-step synthesis, including graphite-like carbon growth on a catalytic Co film and subsequent annealing at elevated temperature, were applied. The growth of the graphene was confir… Show more
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