Coarsening of ion-beam-induced surface ripple in Si: Nonlinear effect vs. geometrical shadowing

Datta, D.P.; Chini, Tapas Kumar

doi:10.1103/physrevb.76.075323

Cited by 37 publications

(21 citation statements)

References 31 publications

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“…This subsequently promotes faceting due to the shadowing of the incident ion beam by the most protruding features. This long-time pattern is characterized by a saw-tooth morphology along the projection of the ion beam direction, similar to the one previously reported on metal-free silicon surfaces [88,84]. For prolonged irradiation of Si targets by inert ions, this faceted morphology evolves and displays a sympathetic increase with time of its amplitude and wavelength [45,120,17].…”

Section: Anisotropic Patterns: Nanoripplessupporting

confidence: 54%

“…Wavelength coarsening also appeared when shadowing effects were operative, which occurred at a longer fluence under this flux condition. In a later study by the same group [84], the dynamics of the ripple pattern was analyzed under the same angle and low flux conditions, but using a lower energy, 30 keV. Qualitatively, the same behavior was found, but with smaller values for W and '.…”

Section: Medium-energy (10-200 Kev)mentioning

confidence: 76%

“…For Si irradiation in the medium-energy range, no studies exist on the dependence with u which are as detailed as those reported for the low-energy case. However, some early studies proposed that the threshold angle should be below 45 for 10-40 keV Xe þ ions [48,46], and below 55 for 30 keV Ar þ ions [84]. Very recently, Garg et al [85] have also reported that the threshold angle for 60 keV Ar þ ions is larger than 30 and lower than 45 .…”

Section: Medium-energy (10-200 Kev)mentioning

confidence: 99%

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Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

157

201

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Section: Anisotropic Patterns: Nanoripplessupporting

confidence: 54%

Section: Medium-energy (10-200 Kev)mentioning

confidence: 76%

Section: Medium-energy (10-200 Kev)mentioning

confidence: 99%

See 1 more Smart Citation

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

157

201

View full text Add to dashboard Cite

“…The coarsening of the patterns on the Si surface is due to the simultaneous Al deposition during IBS. Such coarsening is different from previously reported coarsening with increasing sputtering time [7,9,12,[63][64][65]. Although some theoretical work has explained the coarsening based on numerical models [66,67], a model and simulation that can accurately predict the coarsening due to the impurity co-deposition remains unavailable at this time.…”

Section: Distance Dependence Of Smooth Si Morphology Treated By Obliqcontrasting

confidence: 49%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO 2 ). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar + IBS with Al co-deposition was investigated on smooth SiO 2 , pre-rippled SiO 2 , and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO 2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO 2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO 2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO 2 , respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasiblazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlO x F y compounds originating mainly from the Al source.

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“…However, they fail to explain particular observations, including the formation of ripples at lower angles as observed during low-energy ion bombardment. 3,[12][13][14] Models based on simplified descriptions of binding forces 15 and amorphous targets 16 suggest that the energy deposition distribution differs from Sigmund's ellipsoidal assumption. It has also been argued that the key deficiency of the Bradley-Harper theory, in explaining surface morphologies, is the assumed ellipsoidal shape of energy deposition.…”

Section: Introductionmentioning

confidence: 99%

Ion impact energy distribution and sputtering of Si and Ge

Hossain

Freund

Johnson

2012

Journal of Applied Physics

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Structural characterization of CdSe/ZnS quantum dots using medium energy ion scattering Appl. Phys. Lett. 101, 023110 (2012) Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces Rev. Sci. Instrum. 83, 073304 (2012) Influence of ion source configuration and its operation parameters on the target sputtering and implantation process Rev. Sci. Instrum. 83, 063304 (2012) Note: Measuring effects of Ar-ion cleaning on the secondary electron yield of copper due to electron impact Rev. Sci. Instrum. 83, 066105 (2012) Surface instability of binary compounds caused by sputter yield amplification J. Appl. Phys. 111, 114305 (2012) Additional information on J. Appl. Phys. The spatial distribution of ion deposited energy is often assumed to linearly relate to the local ion-induced sputtering of atoms from a solid surface. This-along with the assumption of an ellipsoidal region of energy deposition-is the central mechanism used in the Bradley and Harper [J. Vac. Sci. Technol. A 6, 2390(1988] explanation of ion-induced surface instabilities, but it has never been assessed directly. To do this, we use molecular dynamics to compute the actual distribution of deposited energy and relate this to the source of sputtered atoms for a range of ion energies (250 eV and 1500 eV), ion species (Ar, Kr, Xe, and Rn), targets (Si and Ge), and incidence angles (0 , 10 , 20 , 30 , 40 , 50 , 60 , 70 , and 80 ). It is found that the energy deposition profile is remarkably ellipsoidal but that the relation between local deposited energy and local sputtering is not simple. It depends significantly upon the incidence angle, and the relation between energy and local sputter yield is nonlinear, though with a nearly uniform power-law relation. These results will affect, in particular, surface instability models based upon simpler approximations. V C 2012 American Institute of Physics. [http://dx

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Coarsening of ion-beam-induced surface ripple in Si: Nonlinear effect vs. geometrical shadowing

Cited by 37 publications

References 31 publications

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

Ion impact energy distribution and sputtering of Si and Ge

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