Coalescence as a key process in wafer-scale diamond heteroepitaxy
Vadim Lebedev,
Jan Kustermann,
Jan Engels
et al.
Abstract:Due to fascinating physical properties powered by remarkable progress in chemical vapor deposition of high-quality epilayers, diamond thin films attract great attention for fabrication of nitrogen-vacancy-based solid-state spin systems capable of operating in ambient conditions. To date, diamond heteroepitaxy via bias-enhanced nucleation is an unavoidable method for reliable wafer-scale film manufacturing. In this work, we analyze the coalescence phenomena in nitrogen doped, heteroepitaxial diamond epilayers, … Show more
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