CO2 sensing behavior of vertically aligned Si Nanowire/ZnO structures

Ocak, Yusuf Selim; Zeggar, M. Lamri; Genişel, Mustafa Fatih; Uzun, Nilüfer Uslu; Aida, M.S.

doi:10.1016/j.mssp.2021.106028

Cited by 10 publications

(12 citation statements)

References 41 publications

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“…Etching increased the NWs length and, hence, the reactive surface of ZnO, offering a better interaction of ZnO with CO 2 . This fact upgraded the device response (Ocak et al , 2021).…”

Section: Zno Nanostructures For Co2 Sensingmentioning

confidence: 99%

“…CO 2 sensors based on pristine ZnO nanostructures in the form of NFs, nanoflowers and NR arrays were prepared by Kanaparthi and Singh (2019), Radhakrishnan et al (2021) and Ocak et al (2021).…”

Section: Zno Nanostructures For Co2 Sensingmentioning

confidence: 99%

“…Their sensitivity towards 100 ppm of CO 2 at 350°C was generally low (0.677) and their response and recovery slow, 4 and 5 min, respectively (Radhakrishnan et al , 2021). Another interesting undoped ZnO nanostructure was that of Ocak et al (2021), who deposited ZnO thin film on vertically aligned silicon NW arrays by atomic layer deposition, followed by metal-assisted chemical etching for 30 min. The fabricated sensors demonstrated relatively low sensitivity of 2.5% and low response and recovery times equal to 6.8 and 7.8 s at ambient temperature, whilst the un-etched samples exhibited no sensitivity.…”

Section: Zno Nanostructures For Co2 Sensingmentioning

confidence: 99%

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ZnO-based chemi-resistive sensors for CO₂ detection: a review

Stramarkou

Bardakas

Krokida

et al. 2022

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Purpose Carbon dioxide (CO2) has attracted special scientific interest over the last years mainly because of its relation to climate change and indoor air quality. Except for this, CO2 can be used as an indicator of food freshness, patients’ clinical state and fire detection. Therefore, the accurate monitoring and controlling of CO2 levels are imperative. The development of highly sensitive, selective and reliable sensors that can efficiently distinguish CO2 in various conditions of temperature, humidity and other gases’ interference is the subject of intensive research with chemi-resistive zinc oxide (ZnO)-based sensors holding a privileged position. Several ZnO nanostructures have been used in sensing applications because of their versatile features. However, the deficient selectivity and long-term stability remain major concerns, especially when operating at room temperature. This study aims to encompass an extensive study of CO2 chemi-resistive sensors based on ZnO, introducing the most significant advances of recent years and the best strategies for enhancing ZnO sensing properties. Design/methodology/approach An overview of the different ZnO nanostructures used for CO2 sensing and their synthesis methods is presented, focusing on the parameters that highly affect the sensing mechanism and, thus, the performance of CO2 sensors. Findings The selectivity and sensitivity of ZnO sensors can be enhanced by adjusting various parameters during their synthesis and by doping or treating ZnO with suitable materials. Originality/value This paper summarises the advances in the rapidly evolving field of CO2 sensing by ZnO sensors and provides research directions for optimised sensors in the future.

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“…Etching increased the NWs length and, hence, the reactive surface of ZnO, offering a better interaction of ZnO with CO 2 . This fact upgraded the device response (Ocak et al , 2021).…”

Section: Zno Nanostructures For Co2 Sensingmentioning

confidence: 99%

Section: Zno Nanostructures For Co2 Sensingmentioning

confidence: 99%

Section: Zno Nanostructures For Co2 Sensingmentioning

confidence: 99%

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ZnO-based chemi-resistive sensors for CO₂ detection: a review

Stramarkou

Bardakas

Krokida

et al. 2022

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“…Крім того, високе відношення поверхні до об'єму, добрі змочуваність і хемосорбційні властивості, біосумісність і контрольовані фізичні та електричні властивості роблять SiNWs унікальними кандидатами для застосування в датчиках фізичних та хімічних величин. Кремнієві нанонитки використовуються переважно в газових сенсорах для аналізу летких органічних сполук (парів етанолу [18], нафти [19], формальдегіду [20]) та неорганічних газів (аміаку [21], вуглекислого газу [22], водню [23], оксиду азоту [24]), а також в сенсорах рідин (глюкози [25], перекису водню [25], етанолу [26], іонів важких металів [27], рівня pH [28]) та сенсорах фізичних величин (вологи [29], температури [30], освітленості [31]). На сьогодні бракує оглядових робіт щодо прикладного застосування кремнієвих нанониток в різних видах сенсорів, особливо з технологічної точки зору.…”

Section: вступunclassified

“…Було показано, що після чотириразового циклювання динамічні характеристики сенсора не зазнали змін, а після випробування протягом місяця сигнал сенсора змінився на 4%, що свідчить про покращені характеристики стабільностні приладу [43]. MWCNTs/SiNWs [22] Модифікація кремнієвих нанодротів цеоліт імідазолатом здійснювалась не лише з утворенням ізотипних, а й анізотипних гетеропереходів. Для цього між кремнієвим матеріалом (р-типу провідності) та модифікатором (р-типу провідності) наносять срібні наночастинки, які в приповерхневому шарі кремнію викликають інверсію електропровідності (n-тип провідності).…”

Section: сенсори парів етанолуunclassified

Sensors Based on Nanoscale Silicon 1D Structures for Industrial, Environmental and Medical Monitoring

Linevych

Koval

2022

Microsyst., Electron. & Acoust.

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Article is devoted to the analysis of modern sensors based on silicon nanowires (SiNWs) to determine the influence of SiNWs synthesis parameters and their structural features on device characteristics. A modern trend in the development of electronic sensing devices is the use of various types of nanomaterials in order to increase sensor sensitivity and miniaturize of their size. 1D nanomaterials, namely SiNWs, have several advantages for sensor applications, such as a large surface-to-volume ratio and an increased rate of diffusion of the main charge carriers. Based on the literature analysis, an overview of modern SiNWs sensors was made. The advantages of silicon 1D structures were shown by comparison with other types of nanostructures. Also sensors were classified according to the methods of synthesis of SiNWs, sensor principle operation, kind of input value and types of applied modifiers. Silicon nanowires were most often synthesized by the method of metal-stimulated chemical etching, the advantages of which include the simplicity of implementation, low cost, and the ability to synthesize nanostructures with a high aspect ratio. The vapor-liquid-solid synthesis was also used, the advantages of which include the ability to be adapted to any technology of supplying a gas mixture with the target component and the possibility of obtaining nanowires with a diameter of 10 nm or less. According to the principle operation, the most of sensors developed on the basis of silicon nanowires are of electrical type (resistive, capacitive, electrochemical, diode or transistor type), optical sensors (fluorescent) are developed to a much lesser extent. Gas sensors (ethanol, oil vapor, formaldehyde, ammonia, nitrogen oxide, hydrogen, carbon dioxide,), liquid sensors (glucose, hydrogen peroxide, ethanol, heavy metal ions, pH), and physical values (humidity, temperature and illumination) have been developed on the basis of silicon 1D nanoscale structures. The following surface modifiers of nanowires were used to improve the performance characteristics: noble metal nanoparticles, metal-organic framework structures, carbon nanotubes, graphene, self-assembled monolayers, metal and metal oxide thin films. In particular, it was shown that the modification of the surface of the array of SiNWs with noble metals led to an increase in the sensitivity of the hydrogen sensor by 80%. Modification of formaldehyde sensor using reduced graphene oxide resulted in an improvement of sensor sensitivity by more than 2 times. The influence of SiNWs synthesis parameters on sensor performance characteristics was also determined. In particular, it was shown that increasing of SiNWs width from 20–30 nm to 500–600 nm led to an increase in the sensitivity of humidity sensor from 4.5 to 7.5%. Increasing the etching time caused the synthesis of longer nanowires, which improved the sensitivity of carbon dioxide sensors from 0.6 to 2.5%. Dependences established in this work will make it possible to develop the production technology of various types of sensors based on silicon nanowires with high sensitivity, selectivity, stability and operation speed.

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