2009
DOI: 10.1016/j.optmat.2008.10.005
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CO2 laser annealing on erbium-activated glass–ceramic waveguides for photonics

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Cited by 18 publications
(3 citation statements)
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“…There have been attempts to anneal SiC films using infrared (IR) wavelength, as demonstrated in the study by Goyes et al [108]. In their experiment, a continuous wave CO 2 laser with a wavelength of 1060 nm and Gaussian beam distribution was employed to anneal an amorphous SiC film deposited on a silicon wafer under vacuum conditions.…”
Section: Silicon Carbide Laser Annealingmentioning
confidence: 99%
“…There have been attempts to anneal SiC films using infrared (IR) wavelength, as demonstrated in the study by Goyes et al [108]. In their experiment, a continuous wave CO 2 laser with a wavelength of 1060 nm and Gaussian beam distribution was employed to anneal an amorphous SiC film deposited on a silicon wafer under vacuum conditions.…”
Section: Silicon Carbide Laser Annealingmentioning
confidence: 99%
“…The thermal stress between the fiber core and cladding can be modified using CO2-laser annealing [9,10]. The CO2 laser has also been useful in thermal annealing of semiconductors [11] and glass waveguides [12]. Since many applications employing fiber Bragg gratings, such as accurate wavelength-control devices in the telecommunication industry, require Bragg gratings with stabilized optical properties to support long-term usage, it is essential to study the decay characteristics of these Bragg gratings.…”
Section: Introductionmentioning
confidence: 99%
“…As a consequence, the distribution of lanthanide ions in a confined microenvironment, which exhibits lower phonon energy, higher refractive index, higher solubility of lanthanide ions, gives rise to particular interesting luminescent properties. In this sense, the optical properties and their correlation with structural features of sol-gel SiO 2 -TiO 2 [7,8], SiO 2 -HfO 2 [9][10][11][12][13][14], SiO 2 -ZrO 2 [15][16][17][18], SiO 2 -Ta 2 O 5 [6,19] and SiO 2 -Nb 2 O 5 [20,21] have been reported in the last years for NIR applications. In previous papers [20,21], we have described in details the NIR luminescence properties of Er 3 þ -doped SiO 2 -Nb 2 O 5 nanocomposites and pointed out a broadening of emission even though the Er 3 þ ions are located in Nb 2 O 5 nanoparticles.…”
mentioning
confidence: 99%