Co/Ni multilayers with perpendicular magnetic anisotropy

Broeder, F. J. A. den; Janssen, Éric; Mud, Auke; Kerkhof, J.M.

doi:10.1016/0304-8853(93)90688-x

Cited by 13 publications

(5 citation statements)

References 13 publications

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“…Currently, magnetism studies are focused on finding materials that can be suitable for diverse applications in spintronics and magnonics. A good candidate is the Co/Ni system because it offers high thermal stability, [ 1 ] high spin polarization, [ 2 ] tunable perpendicular magnetic anisotropy (PMA), [ 2 ] and relatively low damping. [ 3–5 ] It was recently shown that, for Co/Ni systems, spin‐transfer torque (STT) can be used to switch magnetization with low critical current [ 3,6 ] in the range of single nanoseconds [ 7 ] and to induce domain wall movement with low current densities [ 8 ] and high speed.…”

Section: Introductionmentioning

confidence: 99%

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Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

Anastaziak

Głowiński

Urbaniak

et al. 2021

Physica Rapid Research Ltrs

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In spintronics and magnonics, materials that offer tunable perpendicular magnetic anisotropy (PMA) along with low Gilbert damping and high spin polarization are particularly important. Therefore, a lot of studies are performed on Co/Ni films, that aim at satisfying all these requirements. Moreover, the Dzyaloshinskii−Moriya interaction is induced in them by surrounding the magnetic layers with heavy metal or oxide layers. For this reason, the study of the oxidation of Co/Ni is of particular interest. Therefore, the magnetic properties of Co/Ni bilayers after plasma oxidation (PO) are investigated. It is shown that the magnetic anisotropy of these bilayers can be tuned, not only by the thicknesses of Co and Ni layers, but also by oxidation time varied in the range between 15 and 220 s. After PO, the effective thickness of ferromagnetic Ni is reduced, but it does not oxidize more than ≈2 nm, even for longer oxidation. However, the contribution to PMA increases for the entire range of oxidation times. This indicates that the thickness reduction of the Ni layer is not the only source of PMA enhancement. This additional contribution is attributed to the exchange bias coupling between the ferromagnetic (Co/Ni) and the antiferromagnetic NiO layers.

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Section: Introductionmentioning

confidence: 99%

“…[ 11 ] Moreover, PO is a fast process and can be performed on a large scale using commercially available oxidation chambers. Even though Co/Ni layers have been studied for many years, [ 1,14,15 ] no investigations have been conducted so far on the influence of the PO process on the basic magnetic properties of the Co/Ni bilayers.…”

Section: Introductionmentioning

confidence: 99%

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

Anastaziak

Głowiński

Urbaniak

et al. 2021

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…Thin film multilayers with perpendicular magnetic anisotropy have their easy magnetic axis out of the plane. Although counteracted by the in‐plane shape anisotropy associated with a thin film, PMA is well established and has been demonstrated in multilayers of Co/Pd, Co/Pt, Ni/Co 13–15. Our devices use Co/Pd for both the fixed and free layers, separated by a 6‐nm Cu interlayer ( Figure a).…”

Section: Resultsmentioning

confidence: 89%

A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States

Fang¹,

Dumas²,

Nguyễn

et al. 2012

Adv Funct Materials

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A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field‐independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first‐order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field‐dependent population of up and down domains in the free layer.

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“…Furthermore, by Joule heating annealing, our magnetic patterning cannot only be performed on the selected magnetic wires, but can be potentially carried out after the whole IC packaging process, opening a new route for post-production programing of magnetic devices. Furthermore, because the passivation effect on stress relaxation is a common phenomenon observed in many other metal films, we believe our approach can be further extended to other multilayers structure, for instance Co/Pd 49 , Co/Ni 50 multilayers, or even other kinds of perpendicular magnetic anisotropy materials. By properly choosing a passivation material, we can achieve magnetic patterning in other systems.…”

Section: Resultsmentioning

confidence: 93%

Magnetic patterning: local manipulation of the intergranular exchange coupling via grain boundary engineering

Huang

Liao

Hsieh

et al. 2015

Sci Rep

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Magnetic patterning, with designed spatial profile of the desired magnetic properties, has been a rising challenge for developing magnetic devices at nanoscale. Most existing methods rely on locally modifying magnetic anisotropy energy or saturation magnetization, and thus post stringent constraints on the adaptability in diverse applications. We propose an alternative route for magnetic patterning: by manipulating the local intergranular exchange coupling to tune lateral magnetic properties. As demonstration, the grain boundary structure of Co/Pt multilayers is engineered by thermal treatment, where the stress state of the multilayers and thus the intergranular exchange coupling can be modified. With Ag passivation layers on top of the Co/Pt multilayers, we can hinder the stress relaxation and grain boundary modification. Combining the pre-patterned Ag passivation layer with thermal treatment, we can design spatial variations of the magnetic properties by tuning the intergranular exchange coupling, which diversifies the magnetic patterning process and extends its feasibility for varieties of new devices.

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Co/Ni multilayers with perpendicular magnetic anisotropy

Cited by 13 publications

References 13 publications

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

Origin of Perpendicular Magnetic Anisotropy Enhancement in Co/Ni Bilayer Due to Plasma Oxidation

A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States

Magnetic patterning: local manipulation of the intergranular exchange coupling via grain boundary engineering

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