CNx coatings sputtered by DC magnetron: hardness, nitrogenation and optical properties

Fendrych, F.; Pajasová, L.; Wagner, Timo; Jastrabı́k, L.; Chvostová, D.; Soukup, L.; Rusnak, K.

doi:10.1016/s0925-9635(99)00029-1

Cited by 6 publications

(4 citation statements)

References 3 publications

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“…The absorptivity of a-C films increased significantly upon annealing as expected in the case of carbon graphitization. ,− Absorbance measurements were used to generate Tauc plots for annealed carbon films, , which yielded negative bandgap values for a-C700 of −0.8 eV (vs 0.6 eV for a-C). Zero or negative Tauc gap values have been reported in the literature and are consistent with semimetallic electronic properties in deposited films. , An increase in the concentration of sp 2 bonded carbon upon annealing was also evident from X-ray photoelectron (XP) spectra; Figure c shows the C 1s spectrum of a-C and a-C700 surfaces. The main peak shifts to lower binding energies and becomes narrower after annealing at 700 °C, indicating a decrease in the contributions from sp 3 carbon centers. , Finally, the oxygen content of the carbon samples was found to decrease after annealing; analysis of O 1s peaks in a-C700 samples yielded an O/C ratio of 3%, lower than the 9% value observed for a-C surfaces …”

Section: Resultssupporting

confidence: 81%

“…Zero or negative Tauc gap values have been reported in the literature and are consistent with semimetallic electronic properties in deposited films. 28,29 An increase in the concentration of sp 2 bonded carbon upon annealing was also evident from X-ray photoelectron (XP) spectra; Figure 1c shows the C 1s spectrum of a-C and a-C700 surfaces. The main peak shifts to lower binding energies and becomes narrower after annealing at 700 °C, indicating a decrease in the contributions from sp 3 carbon centers.…”

Section: Resultsmentioning

confidence: 86%

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Heterogeneous Charge Transfer at the Amorphous Carbon/Solution Interface: Effect on the Spontaneous Attachment of Aryldiazonium Salts

et al. 2013

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The chemisorption of aryldiazonium salts is one of the most versatile reactions for the modification of carbon surfaces; in this work we investigated the spontaneous chemisorption of aryldiazonium salts at amorphous carbons of differing graphitic content in order to relate surface reactivity to the valence electronic properties of aryldiazonium cations and carbon surfaces. Two structural isomers that differ by their redox potential were chosen for our studies: 4-nitronaphthalenediazonium tetrafluoroborate (4NND) and 5-nitronaphthalenediazonium tetrafluoroborate (5NND). The adsorption of 4NND and 5NND was studied in situ via attenuated total internal reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and ex situ via electrochemistry on two types of graphitic amorphous carbons (a-C), containing 80% and 100% trigonally bonded carbon centers. These two forms of carbon were characterized via electrochemical impedance spectroscopy (EIS), and the more graphitic surface was found to display a heterogeneous charge transfer rate constant 2 orders of magnitude larger than the less graphitic surface. This was consistent with ultraviolet photoelectron spectroscopy (UPS) results showing that the density of occupied states near the Fermi level is higher for the more graphitic substrate. In situ and ex situ studies of adsorption rates show that, on the less graphitic a-C surface, differences in adsorption rate could be explained based on the reduction potentials of the two aryldiazonium cations. However, on the more graphitic surface, we observed no difference in adsorption rates or yields between the two isomers, thus suggesting that spontaneous electron transfer is not rate determining at these surfaces. Gerischer−Marcus theory was used in order to explain the differences in charge transfer rates between the two carbons and to interpret observed differences in aryldiazonium adsorption rates at these substrates. Finally, our results are discussed in light of the current proposed mechanism of aryldiazonium chemisorption.

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Section: Resultssupporting

confidence: 81%

Section: Resultsmentioning

confidence: 86%

Heterogeneous Charge Transfer at the Amorphous Carbon/Solution Interface: Effect on the Spontaneous Attachment of Aryldiazonium Salts

et al. 2013

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“…11,17,18,27,28 According to our results, we conclude that the energy band gap enlarges when we raise the nitrogen flow rate. 11,17,18,27,28 According to our results, we conclude that the energy band gap enlarges when we raise the nitrogen flow rate.…”

Section: E Hall Effect Of the Filmsupporting

confidence: 55%

Copper nitride thin film prepared by reactive radio-frequency magnetron sputtering

Yue

Yan

Liu

et al. 2005

Journal of Applied Physics

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Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N Properties of reactively radio frequency-magnetron sputtered ( Zr , Sn ) TiO 4 dielectric films Copper nitride ͑Cu 3 N͒ thin films were deposited on glass substrates by reactive radio-frequency magnetron sputtering of a pure copper target in a nitrogen/argon atmosphere. The deposition rate of the films gradually decreased with increasing nitrogen flow rate. The color of the deposited films was a reddish dark brown. The Cu 3 N films obtained by this method were strongly textured with crystal direction ͓100͔. The grain size of the polycrystalline films ranged from 16 to 26 nm. The Hall effect of the copper nitride ͑Cu 3 N͒ thin films was investigated. The optical energy gap of the films was obtained from the Hall coefficient and found to vary with the nitrogen content. The surface morphology was studied by scanning electron microscopy and atomic force microscopy. The copper nitride thin films are unstable and decompose into nitrogen and copper upon heat treatment when annealed in vacuum with argon protected at 200°C for 1 h.

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“…Since its first synthesis by Juza and Hahn [8], a variety of methods [1][2][3][5][6][7][8][9][10][11][12][13][14][15][16][17] have been employed in the growth of copper nitride, mostly in the form of thin films; and many experimental data have been established for this material. However, the physical properties of the copper nitride films reported in literature are inconsistent.…”

Section: Introductionmentioning

confidence: 99%

Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

Huang

et al. 2006

Journal of Crystal Growth

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CNx coatings sputtered by DC magnetron: hardness, nitrogenation and optical properties

Cited by 6 publications

References 3 publications

Heterogeneous Charge Transfer at the Amorphous Carbon/Solution Interface: Effect on the Spontaneous Attachment of Aryldiazonium Salts

Heterogeneous Charge Transfer at the Amorphous Carbon/Solution Interface: Effect on the Spontaneous Attachment of Aryldiazonium Salts

Copper nitride thin film prepared by reactive radio-frequency magnetron sputtering

Growth of stoichiometric Cu3N thin films by reactive magnetron sputtering

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