CNTFET based voltage differencing current conveyor low power and universal filter

Mamatov, İslombek; Özçelep, Yasin; Kaçar, Fırat

doi:10.1007/s10470-021-01905-z

Cited by 9 publications

(4 citation statements)

References 20 publications

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“…On the other side, a computationally efficient and accurate compact model explaining the The diameter (D CNT ) of SWCNTs in the channel can affect the overall threshold voltage (V th ), which is a very crucial parameter to control the behavior of CNTFET. It is directly related to the chirality vectors (n 1 , n 2 ) of SWCNT and can be expressed as [41,42]:…”

Section: Carbon Nanotube Field Effect Transistorsmentioning

confidence: 99%

Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs

Masud,

Khan,

Moiz

et al. 2023

Micromachines

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In this paper, a new carbon nanotube field effect transistor (CNTFET)-based second-order fully differential all-pass filter circuit is presented. The realized filter uses CNTFET-based transconductors and grounded capacitors. An active-only second-order fully differential all-pass filter circuit topology is also presented by replacing the grounded capacitance with a CNTFET-based varactor to achieve filter tunability. By controlling the varactor capacitance, active-only second-order fully differential all-pass filter tunability in the range of 15 GHz to 27.5 GHz is achieved. The proposed active-only circuit works on -oltage, low-power dissipation and high tunable pole frequency. The realized circuit operations are verified through the HPSPICE simulation tool. Deng’s CNTFET model is utilized to verify the filter performances at the 16 nm technology node. It is seen that the proposed filter simulation justifies the theoretical predictions and works efficiently in the deep-submicron technology.

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Section: Carbon Nanotube Field Effect Transistorsmentioning

confidence: 99%

Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs

Masud,

Khan,

Moiz

et al. 2023

Micromachines

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“…A CMOS version of DO‐CCII is proposed by Al‐Absi et al, 10 utilize 0.18 μm technology node, operates at a supply voltage of ±5 V circuit and uses 19 MOS transistors. Mamatov et al 11 reported carbon nanotube field effect transistor (CNTFET) implementation of voltage differencing current conveyor at 32 nm technology node that consumes power 0.3 μW. Al‐Absi 12 has proposed a floating and tunable active inductor using one DO‐CCII and one operational transconductance amplifier at 0.18 μm CMOS technology node 12 .…”

Section: Introductionmentioning

confidence: 99%

“…Tlelo-Cuautle et al 6 have designed a DO-CCII circuit employing voltage follower (VF) and a current follower. It has been designed at 1.2 μm technology node using 28 MOS transistors with an operating voltage of ±1.5 V. One more DO-CCII structure is proposed by Abdalla et al, 7 11 reported carbon nanotube field effect transistor (CNTFET) implementation of voltage differencing current conveyor at 32 nm technology node that consumes power 0.3 μW. Al-Absi 12 has proposed a floating and tunable active inductor using one DO-CCII and one operational transconductance amplifier at 0.18 μm CMOS technology node.…”

Section: Introductionmentioning

confidence: 99%

Novel carbon nanotube field effect transistor based dual output second‐generation current conveyor: Design and applications

Jogad

Loan

Afzal

2023

Int J Numerical Modelling

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In this work, we propose, design and simulate a new configuration of Class AB dual output (DO) second‐generation current conveyor (DO‐CCII). Two versions of this new DO‐CCII configuration are proposed: one employing 32 nm technology‐based carbon nanotube field effect transistor (CNTFET) and the other employing the conventional complementary MOS (CMOS). The HSPICE simulation studies have been performed to evaluate key performance parameters like current and voltage gains, voltage and current bandwidths (BW), the port X and Y resistances, total harmonic distortion of both proposed DO‐CCII configurations. It has been seen that ~388× and ~215× improvement in current and voltage BWs respectively have been achieved in the proposed CNTFET based DO‐CCII (CNTFET‐DO‐CCII) configuration in comparison to its CMOS counterpart (CMOS‐DO‐CCII). Similarly, desired port X and Y resistances have resulted substantially in the CNTFET based DO‐CCII configuration. Further, to evaluate the performance of proposed DO‐CCIIs, some applications such as sinusoidal oscillator, integrator and differentiator have been simulated and compared. In the designed oscillators, the effect of temperature on oscillating frequency has also been studied. A temperature insensitive behavior has been seen in the CNTFET‐DO‐CCII for a wide frequency range. Furthermore, it has been found that the optimization of number of CNTs, CNT diameter and inter‐CNT pitch of CNTFETs improve the performance of the proposed DO‐CCII.

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“…CNTFET yapısının a) yandan görünümü b) üstten görünümü[26] (a) side view b) top view of MOSFET-like CNTFET structure) ( 9 )(10) Önerilen CNTFET VDGA filtre yapısında tüp sayısı tüm CNTFET'ler için N=21 olarak alınmıştır. C1 ve C2 kapasitansları 0,1 pF olarakseçilmiştir.…”

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CNTFET VDGA tabanlı ultra düşük güç düşük voltaj yüksek frekanslı filtre uygulamaları

Sunca,

Alçı

2024

Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi

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MOSFET boyutlarının ölçeklendirilmesinde sınır değere yaklaşılmasıyla birlikte birçok problem ortaya çıkmıştır. MOSFET’in boyutlarının küçültülmesiyle ortaya çıkan kısa kanal etkileri ve azaltılmış geçit kontrolü gibi birçok problemler için alternatif çözüm yolları araştırılmıştır. Karbon Nanotüp Alan Etkili Transistör (CNTFET- Carbon Nanotubes Field Effect Transistors) üstün elektriksel ve mekaniksel özellikleri ile MOSFET’ in yerini alacak en uygun alternatif olarak düşünülmektedir. Bu çalışmada, 32 nm CNTFET kullanılarak Voltaj Farkı Alan Kazanç Kuvvetlendirici (VDGA-Voltage Differencing Gain Amplifier) yapısının benzetim çalışmaları yapılmıştır. Buna ek olarak CNTFET VDGA yapısı ile üç girişli tek çıkışlı filtre yapısı sunulmuştur. ±0.3V düşük besleme voltajında ve 1µA düşük kutuplama akımında gerçekleştirilen filtre yapısı, CMOS VDGA ile gerçekleştirilen filtre yapısına kıyasla 22,909 MHz gibi daha yüksek merkez frekansına sahiptir. Ayrıca CNTFET VDGA yapısıyla gerçekleştirilen filtre 8,3412 µW düşük güç tüketimine sahiptir.

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CNTFET based voltage differencing current conveyor low power and universal filter

Cited by 9 publications

References 20 publications

Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs

Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs

Novel carbon nanotube field effect transistor based dual output second‐generation current conveyor: Design and applications

CNTFET VDGA tabanlı ultra düşük güç düşük voltaj yüksek frekanslı filtre uygulamaları

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