2014
DOI: 10.1109/tuffc.2014.006481
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CMUTs with high-K atomic layer deposition dielectric material insulation layer

Abstract: Use of high-κ dielectric, atomic layer deposition (ALD) materials as an insulation layer material for capacitive micromachined ultrasonic transducers (CMUTs) is investigated. The effect of insulation layer material and thickness on CMUT performance is evaluated using a simple parallel plate model. The model shows that both high dielectric constant and the electrical breakdown strength are important for the dielectric material, and significant performance improvement can be achieved, especially as the vacuum ga… Show more

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Cited by 17 publications
(7 citation statements)
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References 35 publications
(43 reference statements)
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“…The fabrication and characterization of these CMUT arrays are discussed in the literature in great detail. [23][24][25] It should be noted that the CMUT was originally fabricated for imaging applications with a center frequency of 7 MHz in water and is not optimized as a CPUT. The CMUT capacitor is wirebonded to a printed circuit board (PCB) and forms the CPUT as part of a series RLC circuit along with a 100 lH inductor and a 20 X resistor.…”
mentioning
confidence: 99%
“…The fabrication and characterization of these CMUT arrays are discussed in the literature in great detail. [23][24][25] It should be noted that the CMUT was originally fabricated for imaging applications with a center frequency of 7 MHz in water and is not optimized as a CPUT. The CMUT capacitor is wirebonded to a printed circuit board (PCB) and forms the CPUT as part of a series RLC circuit along with a 100 lH inductor and a 20 X resistor.…”
mentioning
confidence: 99%
“…With non-collapsed CMUT operation, one can easily satisfy the required C >> CCMUT condition in this approach, considering that in CMUT-on-CMOS implementation the parasitic capacitance will be minimized. For instance, a breakdown voltage of 60 V can be achieved with hafnium dioxide with a typical gap/dielectric thickness of 150 nm [32]. This approach would enable fabrication of a high voltage capacitor in the CMUT layer for compact ultrasound analog front end design in imaging applications.…”
Section: Resultsmentioning
confidence: 99%
“…The stress in the nitride membrane is not considered. The electrode coverage of the membranes is kept constant at 56% and the isolation material is chosen as HfO 2 (relative permittivity = 15) of a thickness so that the electric field under operation is at 75% of the breakdown field strength [45]. Initial receiver and pulse-echo analysis is carried out on arrays with varying lateral dimensions and constant fill factor, followed by analysis on arrays with constant lateral dimensions and varying fill factor.…”
Section: Discussionmentioning
confidence: 99%