CMOS power retriever for UHF RFID tags

Facen, A.; Boni, Andrea

doi:10.1049/el:20072342

Cited by 24 publications

(16 citation statements)

References 1 publication

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“…The latter is based on Schottky diodes when such a technology option is available [4,5]. In [6] a power retriever for UHF RFID in digital CMOS technology is reported. The unregulated voltage provided by the rectifier exhibits a strong dependence on the distance between the reader and the tag (reading distance).…”

Section: Supply Voltage Regulationmentioning

confidence: 99%

“…The voltage signal at that node is provided to the ASK demodulator. A Dickson charge-pump implements DC-DC up-conversion operation and provides a suitable voltage to the linear regulator [6]. A large (1 nF) integrated capacitor is introduced at the output of the converter to lower voltage ripple below an acceptable threshold.…”

Section: Supply Voltage Regulationmentioning

confidence: 99%

“…The unregulated supply voltage is provided to the regulator and the voltage reference by a RF rectifier combined with a Dickson voltage multiplier, Fig. 1 [6]. With an input power as low as -15 dBm an unregulated supply voltage (V DD-UNREG ) of about 1.2 V is provided to the regulator.…”

Section: Low Drop-out Regulatormentioning

confidence: 99%

“…Figure 7 shows the simulated start-up transient of the regulator. In the simulation, the reference and the regulator are biased by the RF rectifier and voltage multiplier described in [6] with an input power (at the antenna terminals) of -15 dBm, corresponding to the maximum reading distance. The simulated power supply rejection (PSR) of the low drop-out regulator is reported in Fig.…”

Section: Low Drop-out Regulatormentioning

confidence: 99%

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Ultra low-voltage analog circuits for UHF RFID devices in 180 nm CMOS technology

Boni

Facen

2009

Analog Integr Circ Sig Process

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Radio-frequency identification by means of passive tags requires low-cost devices featuring extremely low power consumption for long reading distance and compatibility to small printed antennas. The paper describes the design and implementation of the key analog blocks in a RFID chip: power supply regulator, local oscillator and ASK demodulator. The proposed local oscillator exhibits a very low power consumption and achieves a frequency tolerance compatible with the requirements dictated by the ISO 18000-6 standards. In addition, an ultra-low power voltage reference and a regulator based on a zero-voltage threshold device are presented. These circuits are suitable to provide a regulated power supply to the local oscillator and to the core logic of the passive device. Measurements on a chip implemented in 0.18 lm digital CMOS technology validate the results obtained from simulations.

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Section: Supply Voltage Regulationmentioning

confidence: 99%

Section: Supply Voltage Regulationmentioning

confidence: 99%

Section: Low Drop-out Regulatormentioning

confidence: 99%

Section: Low Drop-out Regulatormentioning

confidence: 99%

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Ultra low-voltage analog circuits for UHF RFID devices in 180 nm CMOS technology

Boni

Facen

2009

Analog Integr Circ Sig Process

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“…7d) is widely used because of its low leakage current and potential for further modification for specific applications. A detail explanation and analysis is presented in [49,50].…”

Section: Rectifier/voltage Multipliermentioning

confidence: 99%

RF power harvesting: a review on designing methodologies and applications

Tran

Cha

Park

2017

Micro and Nano Syst Lett

236

146

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Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

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900 MHZ radio‐frequency identification rectifier with optimization and reusing of electro‐static discharges protections in 180 nm digital CMOS technology

Boni

Bigi

2014

Circuit Theory & Apps

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Summary Sensitivity and electro‐static discharges (ESD) protection level are crucial parameters for any Ultra High‐Frequency (UHF) power rectifier–harvester designed for radio‐frequency identification (RFID) devices. While sensitivity limits the reading range of the interrogator‐to‐tag communication link, the requirement for an adequate protection against ESD is enforced in commercial devices connected to a printed antenna. Both resistive and capacitive parasitics of the protection circuits severely affect RF performance of the device. In the paper, a rectifier for UHF RFID embedding an ESD protection for 2 kV human‐body discharge model (HBM) level is proposed. The target of a low added parasitic capacitance is achieved by adapting the protection circuit to the RFID rectifier and reusing the ESD clamp for additional functions being mandatory in a UHF RFID front end. The layout of the ESD clamp has been optimized for minimum parasitic resistance without sacrificing the protection level. Two UHF harvesters were implemented in a 180 nm digital complementary metal‐oxide semiconductor (CMOS) technology, featuring a minimum sensitivity of −15.5 dBm with an ESD protection level of 2 kV HBM. Copyright © 2014 John Wiley & Sons, Ltd.

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CMOS power retriever for UHF RFID tags

Cited by 24 publications

References 1 publication

Ultra low-voltage analog circuits for UHF RFID devices in 180 nm CMOS technology

Ultra low-voltage analog circuits for UHF RFID devices in 180 nm CMOS technology

RF power harvesting: a review on designing methodologies and applications

900 MHZ radio‐frequency identification rectifier with optimization and reusing of electro‐static discharges protections in 180 nm digital CMOS technology

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