CMOS Photonics Technology Overview

Gunn, Cary

doi:10.1109/csics.2006.319929

Cited by 4 publications

(4 citation statements)

References 5 publications

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“…A very significant development was reported by Luxtera and its team members who have attained 10 Gb/s modulation in a carrier-depletion Si microring modulator [15,16,17]. This fast, efficient device uses a reverse-biased lateral PN junction within the Si ring, and the manufacturing is fully compatible with a 130-nm CMOS SOI production facility (a high-volume Fab).…”

Section: Ultrafast Electrooptical Modulators Michalmentioning

confidence: 99%

Active Microring Resonator Devices in Silicon-on-Insulator

Soref

2006

3rd IEEE International Conference on Group IV Photonics, 2006.

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Abstract:Recent results from several laboratories are surveyed. The topics include SOIbased ultrafast electrooptical modulators, N x N routing switches, tunable filters-andadd/drops, Raman lasers and amplifiers, electrically pumped group IV lasers, optically pumped Er:SiO 2 -overclad slotted rings, and a variety of nonlinear optical devices. IntroductionMicrophotonic and nanophotonic components in SOI (or in SGOI or GOI) are key "enablers" for the next generation of Si-based waveguided photonic networks and opto-electronic integrated circuits (OEICs). Microring and microdisk resonators are advantageous microphotonic components because they can be interconnected densely on a chip and use minimal "real estate," allowing high functionality at low cost. Active rings offer versatility in applications, efficiency and low-power onchip actuation. The term "active" includes thermooptic (TO) electrooptic (EO) and opto-optical devices (those using nonlinear optical interactions). This talk will survey the recent results obtained at several laboratories on active microring resonator devices. Generally, the SiO 2 lower cladding in SOI, SGOI and GOI maintains the high Q of the resonators; whereas, without SiO 2 , the resulting suspended Si membrane is best for 2D photonic-crystal resonators analogous to the disks. In addition to 2D rings and disks, 3D silicon microsphere resonators have achieved visibility lately [1]. 2. Trimmable Optical Filters. Empirically, the resonators rarely "work as fabricated." Electromagnetic modeling software is not (yet) good enough to predict the resonances of a 3D device having very specific dimensions. So, in practice, the microring spectral filtering characteristic, as fabricated, does not match the design specifications. That is why trimming or tuning of the resonator(s) has become essential. Polymeric loading on the Si waveguide-controlled photo-oxidation of polysilane [2]--is a good way to trim the resonator permanently and stably. Trimming is an essential part of Luxtera's WDM [3]. Today, localized heating of the silicon waveguide (a TO index change) is the most explored and effective means of tuning the resonator, although electrooptical tuning of the ring (steady carrier injection or depletion) will be online soon. 3. Tunable Filters and Add/Drop Multiplexers. TO trimming-and-tuning has facilitated the worldrecord 1 GHz bandpass of a multi ring/MZI filter that has 5 GHz tunability [4]. The TO-activated polymeric two-ring reconfigurable add/drop multiplexer of Yamagata [5] could be realized easily in vertically stacked double-SOI containing two Si buses and two TO-tunable Si microrings, allowing significant WDM tuning. 4. 2 x 2 and N x N Optical Routing Switches. Stephen Emelett and I wrote several papers [6,7,8] on dual-microring switches (fixed-ring devices and floating-ring devices) that are readily cascaded into N x N crossbar-matrix crossconnects [9] or permutation-matrix network-routing switches. The preferred embodiments use carrier injection-or-depletion in both rings, obtained v...

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Section: Ultrafast Electrooptical Modulators Michalmentioning

confidence: 99%

Active Microring Resonator Devices in Silicon-on-Insulator

Soref

2006

3rd IEEE International Conference on Group IV Photonics, 2006.

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“…A more specific EPIC goal is shown in the schematic diagram of Figure 1.4 which presents the Luxtera team's digital-signal Phase 1 OEIC fiber-optic transceiver [18][19][20][21]. Using the 130 nm Freescale production plant, the Luxtera team has created in a single layer of silicon a group of excellent components including a holographic surface-grating coupler for fibers, a carrier-depletion 10 Gb/s modulator, a trimmable three-channel demultiplexing filter and a 1 × 2 electrooptical switch.…”

Section: The Present Status Of Oeicsmentioning

confidence: 99%

Introduction: The Opto‐Electronic Integrated Circuit

Soref

2008

Silicon Photonics

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“…Silicon photonics is in principle compatible with CMOS processes which should enable photonic and electronic devices to be integrated on the same substrate, although progress in this field has so far been surprisingly slow. Freescale and brought the first silicon photonics product to the market [43]. Recently, they collaborated with ST Microelectronics to deliver low cost 28Gbits/s silicon photonics platform using 300mm SOI wafer [44].…”

Section: Silicon Photonics and Cmos Integrationmentioning

confidence: 99%

“…These are the subject of intense research and development efforts worldwide. Luxtera was the pioneer in developing CMOS-photonics integration based on a 130 nm technology at Freescale, and brought the first silicon photonics product to the market [14]. IBM developed a silicon photonic transmitter for next-generation short-reach optical interconnects.…”

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confidence: 99%

Integration of Electronics and Planar Waveguide Photonics in the Silicon-on-Insulator Platform

Li¹

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The overall goal of this research project is to develop new techniques for the monolithic integration of electronic and optical waveguide devices in the SOI platform. We have focused on designing and demonstrating monolithic integrated waveguide photodetectors and transimpedance amplifiers since these components will be vital to most systems. In the absence of a commercial foundry SOI technology offering conventional CMOS electronic devices integrated with photonic components, we have taken two different approaches towards the integration of amplifiers and photodetectors. First, we implemented lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a widely used commercial foundry SOI photonics technology lacking MOS devices but offering a variety of n-and p-type ion implants intended to provide waveguide modulators and photodetectors. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models for circuit simulation were developed. These models were then used to design basic transimpedance amplifiers integrated with optical waveguides, which were fabricated along with a suite of test devices. Experimental test results for the completed structures are reported and used to refine the compact device models. The second approach has been to show how low-loss optical waveguides can be integrated in a s imple fully-depleted SOI CMOS technology used for in-house student project fabrication in the Carleton University Microfabrication Facility. In particular experimental and theoretical results are given for loss and photoresponse for Schottky diode photodetectors integrated with these waveguides. A CMOS transimpedance amplifier is also demonstrated in this technology.

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CMOS Photonics Technology Overview

Cited by 4 publications

References 5 publications

Active Microring Resonator Devices in Silicon-on-Insulator

Active Microring Resonator Devices in Silicon-on-Insulator

Introduction: The Opto‐Electronic Integrated Circuit

Integration of Electronics and Planar Waveguide Photonics in the Silicon-on-Insulator Platform

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