CMOS Monolithic Metal–Oxide Sensor System Comprising a Microhotplate and Associated Circuitry

Gräf, M.; Barrettino, Diego; Zimmermann, Martín; Hierlemann, Andreas; Baltes, H.; Hahn, Simone; Bârsan, Nicolae

doi:10.1109/jsen.2003.820367

Cited by 77 publications

(49 citation statements)

References 23 publications

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“…It also corresponds with the experience that Pt thin film heaters start to glow visibly at 600 • C [4]. More accurate measurements could be obtained from experiments in a furnace or on a hot chuck, from IR emission spectroscopy, or by using miniature thermocouples [1,21,33]. The time constant is evaluated by using a waveform generator and an oscilloscope.…”

Section: Design Fabrication and Characterizationmentioning

confidence: 79%

Microhotplates with TiN heaters

Creemer

Briand

Zandbergen

et al. 2008

Sensors and Actuators A: Physical

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a b s t r a c tTitanium nitride (TiN) has been investigated as a heater material for microhotplates and microreactors. TiN is available in many CMOS processes, unlike many other microheater materials. In addition, TiN has a very high melting point (2950 • C) meaning that it is stable up to higher temperatures than platinum (Pt) and polysilicon. For the first time, TiN is tested inside a conventional membrane of LPCVD silicon nitride (SiN). Two types of sputtered TiN are considered: high stress and low stress. Their performance is compared with that of e-beam evaporated Pt. The maximum average temperature of TiN heaters is 11% higher than those of Pt, and reaches over 700 • C. Failure of the TiN heaters is due to rupture of the membrane. Failure of the Pt heater is due to electro-stress migration. For high-stress TiN, the temperature coefficient of resistance is almost constant and close to that of Pt, making the material very suitable for temperature sensing. In the case of low-stress TiN the temperature coefficient of resistance (TCR) becomes nonlinear and changes sign. The large differences between the materials are explained by the grain structure. The different grain structures are related to the sputtering parameters according to the Thornton model.

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Section: Design Fabrication and Characterizationmentioning

confidence: 79%

Microhotplates with TiN heaters

Creemer

Briand

Zandbergen

et al. 2008

Sensors and Actuators A: Physical

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“…[5][6][7] By integrating MHP gas sensor array with IC on one chip for signal processing and temperature compensation, intelligent gas sensors can be achieved, thus, CMOS-compatible MHP gas sensors are of great interest. [6][7][8][9][10][11] Heaters, free-standing membrane, gas sensing films and electrodes are essential factors for MHP gas sensors. [6][7][8]11 Many CMOS-compatible MHP gas sensors use poly-Si resisters as heaters.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8]11 Many CMOS-compatible MHP gas sensors use poly-Si resisters as heaters. [10][11][12] However, during operating at high temperature for a long time, the resistances drift of poly-Si cause long-term stability problems. 13,14 In the modern standard CMOS processes, tungsten, with excellent mechanical strength as well as high temperatures stability, is used as a plug material to form via between different metal layers and the silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

“…Since aluminum is the only choice in standard CMOS technique, it has been used as the electrodes of the sensing film. 10,17 But contact problem between the Al electrodes and a Electronic mail: junyu@dlut.edu.cn the sensing films as a result of the oxidation of Al will lead to the invalidation of the gas sensor after long time high temperature operation. 10 In this paper, a novel CMOS-compatible MHP gas sensor is designed and fabricated with a standard industrial CMOS technology followed by post-CMOS processes.…”

Section: Introductionmentioning

confidence: 99%

“…10,17 But contact problem between the Al electrodes and a Electronic mail: junyu@dlut.edu.cn the sensing films as a result of the oxidation of Al will lead to the invalidation of the gas sensor after long time high temperature operation. 10 In this paper, a novel CMOS-compatible MHP gas sensor is designed and fabricated with a standard industrial CMOS technology followed by post-CMOS processes. The design and fabrication of the heater, free-standing membrane, gas sensing film and its electrodes are presented in detail, and the performance characteristics of the device are reported.…”

Section: Introductionmentioning

confidence: 99%

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Design and fabrication of a CMOS-compatible MHP gas sensor

et al. 2014

AIP Advances

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A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

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Environmental Sensing

Zaki¹

2022

Advances in Semiconductor Technologies

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CMOS Monolithic Metal–Oxide Sensor System Comprising a Microhotplate and Associated Circuitry

Cited by 77 publications

References 23 publications

Microhotplates with TiN heaters

Microhotplates with TiN heaters

Design and fabrication of a CMOS-compatible MHP gas sensor

Environmental Sensing

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