CMOS MMICs for microwave and millimeter wave applications

Ferndahl, Mattias; Zirath, Herbert; Motlagh, B.M.; Masud, A.; Angelov, I.; Vickes, H.‐O.; Gevorgian, Spartak; Ingvarsson, Fredrik

doi:10.1109/mikon.2004.1356908

Cited by 8 publications

(3 citation statements)

References 22 publications

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“…In this paper, we will present and discuss the advances of CMOS and SiGe technology has advanced to enable a complete chipset for 60 GHz applications [4][5][6]. The front-end architecture using a sub-harmonic approach will be detailed and analyzed and example of circuits such as millimeter-waves LNA, mixer and VCO will be presented.…”

Section: Device Technologymentioning

confidence: 99%

Low Cost 60 GHz Gb/s Radio Development

Pinel¹,

Lee²,

Sarkar³

et al. 2006

PIERS Online

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The recent advances of CMOS and SiGe process technologies have now made the design of lowcost highly integrated millimeter-wave radios possible in Silicon. In combination with an optimum organic Liquid Crystal Polymer packaging approach, this represents a unique opportunity to develop Gb/s radio that could address the increasing demand in term of data rate throughput of the emerging broadband wireless communication systems. In this paper we discuss the circuit and module challenges that will enable a successful deployment of 60 GHz gigabits wireless systems.

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Section: Device Technologymentioning

confidence: 99%

Low Cost 60 GHz Gb/s Radio Development

Pinel¹,

Lee²,

Sarkar³

et al. 2006

PIERS Online

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“…Low frequency CMOS resistive mixers have been used in RF front-ends for many years, but high frequency CMOS resistive mixers occur only recently [5]. Here, a resistive mixer with a single-ended configuration is presented.…”

Section: Resistive Mixermentioning

confidence: 99%

“…Moreover, a passive resistive mixer [5] operating at 20GHz is demonstrated. The reason to choose this topology, instead of the folded-switching Gilbert mixer [2]- [3], is that the passive resistive mixer needs only a very low gate bias voltage, and does not consume any DC power, furthermore, it has high linearity and low noise figure.…”

Section: Introductionmentioning

confidence: 99%

A 20 GHz sub-1V low noise amplifier and a resistive mixer in 90 nm CMOS technology

Bao

Jacobsson

Aspemyr

et al.

2005 Asia-Pacific Microwave Conference Proceedings

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A 20 GHz sub-1 V low noise amplifier and a resistive mixer are designed and fabricated in 90 nm CMOS technology. The LNA achieves a good linearity along with a moderate gain and noise figure. For instance, at 0.9 V supply voltage, 8.8 dB of gain and 5.2 dB of noise figure, as well as 7.0 dBm of IIP3 are obtained. This LNA can work properly even at a supply voltage as low as 0.66 V. It achieves 8.0 dB of gain, 5.3 dB of noise figure, and 3.8 dBm of III3. The DC consumption is 16.8 mW and 11 mW for a supply voltage of 0.9 V and 0.66 V, respectively. This is the first report of a high frequency CMOS LNA operating at such low supply voltage and low DC power dissipation. Moreover, a 20 GHz resistive passive mixer is presented, exhibiting a high IIP3 of 19 dBm, a moderate conversion loss of 7.6 dB, and a low noise figure of 4.35 dB. It consumes no DC power. Thus, these two circuits are suitable to be applied in a high frequency CMOS front-end operating with sub-1V supply. 0-7803-9433-X/05/$20.00 ©2005 IEEE. APMC2005 Proceedings

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