Cmos microsystem for ac current measurement with galvanic isolation

Frick, V.; Hébrard, Luc; Poure, Philippe; Anstotz, F.; Braun, F.

doi:10.1109/jsen.2003.820555

Cited by 18 publications

(6 citation statements)

References 11 publications

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“…The sensitivity of an actual Hall effect sensor is always smaller than the theoretical sensitivity given by (6). Indeed, some short circuit effects take place near the biasing and sensing contacts: a part of the current lines are deflected near the sensing contacts and the Hall voltage is strongly reduced near the highly doped (n large) biasing contacts [17].…”

Section: Geometrical Correction Factormentioning

confidence: 99%

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Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

Kammerer

Hébrard

Frick

et al. 2006

Eur. Phys. J. Appl. Phys.

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While silicon is not the best semi-conductor material to design Hall effect sensors, it is widely used because Hall devices are fully compatible with standard processes such as CMOS or Bi-CMOS. Hall effect sensors can thus take advantage of on-chip circuitry to counterbalance the poor intrinsic metrological characteristics of silicon Hall devices, and low cost integrated smart magnetometers can be designed using standard technologies. Conventional Hall plate as well as the spinning-current method, which is the present state of the art technique to improve performances of integrated Hall devices, are reviewed in this paper. Then a new multi-strips Hall device and its specific biasing circuit are introduced. This new device allows to multiply by n the absolute sensitivity of the Hall sensor where n is the number of strips, but it suffers from offset. To overcome this drawback, a Hall sensors network which also allows to increase the sensitivity while reducing the offset is proposed. Finally a comparison between the Hall sensors network and the spinning-current is done, showing that both techniques are complementary and should be combined to design high resolution Hall sensor systems.

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Section: Geometrical Correction Factormentioning

confidence: 99%

“…Nowadays, Hall effect magnetometers are probably the most widely used magnetic sensors [1]. They find applications in the fields of automotive [2], angular position sensors [3,4], contact-less current sensing [5,6], compass systems [7], magnetic tracking [8,9], . .…”

Section: Introductionmentioning

confidence: 99%

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

Kammerer

Hébrard

Frick

et al. 2006

Eur. Phys. J. Appl. Phys.

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“…While for large currents individual discrete sensors are used, small currents up to typically 5 A can be measured by integrated sensors. 5 The main problem of using only two sensors in differential configuration can suppress external homogeneous field, but this configuration has large sensitivity to external currents in any direction. 6 Circular array of DC magnetic sensors is much more effective in this respect.…”

Section: Introductionmentioning

confidence: 99%

The effect of conductor permeability on electric current transducers

et al. 2017

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In this paper, experimental works and theoretical analysis are presented to analyze the influence of the conductor permeability on the precision of yokeless current sensors. The results of finite-element method (FEM) fit well the measured field values around the conductor. Finally we evaluate the difference in magnetic fields distribution around non-magnetic and magnetic conductor. The calculated values show that the permeability of the ferromagnetic conductor significally affects the reading of the electric current sensors even at DC.

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“…Many of them operate at low frequencies and require high accuracy. Most of the time now they are coupled to mixed signal electronics in order to build complex and versatile microsystems [1].…”

Section: Introductionmentioning

confidence: 99%

Chopper stabilized CMOS integrated front-end for magnetic field measurement

Frick¹,

Pascal²,

Blondé³

et al. 2006

IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics

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This paper presents an analogue front-end dedicated to magnetic field measurement that is intended to be used in a mixed signal submicron CMOS microsystem. The front-end features a Hall device and its biasing circuitry both associated to a nested chopper-like structure. This system efficiently removes 1/f noise and reduces offset. The biasing amplifier is chopped at a frequency f c in order to ensure steady ground referencing to the Hall device. This latter is operated using the spinning current technique at a frequency f s = f c /2. Sensitivities of 90 V/AT and resolutions of about 15 µT over a 1.6 kHz bandwidth extending from 5 to 1.6 kHz have been measured.

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Cmos microsystem for ac current measurement with galvanic isolation

Cited by 18 publications

References 11 publications

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

Hall effect sensors integrated in standard technology and optimized with on-chip circuitry

The effect of conductor permeability on electric current transducers

Chopper stabilized CMOS integrated front-end for magnetic field measurement

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